TCLT100. Series www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, SOP-4L, Long Mini-Flat Package C E FEATURES 4 3 • SMD low profile 4 lead package • VIORM = 1050 V • CTR flexibility available see order information • Special construction 1 A 17295-5 2 • Extra low coupling capacitance C • DC input with transistor output • Creepage distance > 8 mm • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The TCLT100. series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead SOP4L package. AGENCY APPROVALS • UL1577, file no. E76222 • CSA (cUL) 22.2 bulletin 5A recognized file no. E-76222 APPLICATIONS • Switchmode power supplies • BSI: BS EN 41003, BS EN 60065 (BS 415), BS EN 60950 (BS 7002), certificate number 7081 and 7402 • Computer peripheral interface • DIN EN 60747-5-5 (VDE 0884) • Microprocessor system interface • FIMKO: EN 60950 • CQC Note • See the safety standard approval list “Agency Table” for more detailed information. ORDERING INFORMATION T C L T 1 0 0 SOP-4L # 10.2 mm PART NUMBER AGENCY CERTIFIED/PACKAGE CTR (%) 5 mA UL, cUL, VDE, BSI, FIMKO 50 to 600 SOP-4L 10 mA 5 mA 63 to 125 100 to 200 160 to 320 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400 TCLT1000 TCLT1002 TCLT1003 TCLT1004 TCLT1005 TCLT1006 TCLT1007 TCLT1008 TCLT1009 Note • Available only on tape and reel. Document Number: 83515 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.9, 01-Dec-15 TCLT100. Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA Forward surge current tp ≤ 10 μs IFSM 1.5 A Pdiss 100 mW Tj 125 °C Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V mA Power dissipation Junction temperature OUTPUT Collector current Collector peak current tp/T = 0.5, tp ≤ 10 ms Power dissipation Junction temperature IC 50 ICM 100 mA Pdiss 150 mW Tj 125 °C COUPLER Total power dissipation Ptot 250 mW Operating ambient temperature range Tamb -55 to +100 °C Storage temperature range Tstg -55 to +125 °C Soldering temperature Tsld 260 °C Note • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 50 mA VF - 1.25 1.6 V VR = 0 V, f = 1 MHz Cj - 50 - pF Collector emitter voltage IC = 1 mA VCEO 70 - - V Emitter collector voltage IE = 100 μA VECO 7 - - V VCE = 20 V, IF = 0 A ICEO - 10 100 nA Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat - - 0.3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc - 110 - kHz f = 1 MHz Ck - 0.3 - pF Junction capacitance OUTPUT Collector emitter cut-off current COUPLER Coupling capacitance Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Document Number: 83515 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.9, 01-Dec-15 TCLT100. Series www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT VCE = 5 V, IF = 5 mA TCLT1000 CTR 50 - 600 % TCLT1002 CTR 63 - 125 % TCLT1003 CTR 100 - 200 % TCLT1004 CTR 160 - 320 % TCLT1002 CTR 22 45 - % TCLT1003 CTR 34 70 - % TCLT1004 CTR 56 100 - % TCLT1005 CTR 50 - 150 % TCLT1006 CTR 100 - 300 % TCLT1007 CTR 80 - 160 % TCLT1008 CTR 130 - 260 % TCLT1009 CTR 200 - 400 % VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 1 mA IC/IF VCE = 5 V, IF = 5 mA SAFETY AND INSULATION RATINGS PARAMETER Partial discharge test voltage - routine test Partial discharge test voltage lot test (sample test) CONDITION SYMBOL VALUE 100 %, ttest = 1 s Vpd 2 kV tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 8 kVpeak Vpd 1.68 kVpeak VISO 5000 VRMS VIO = 500 V RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω RIO 109 Ω Isolation test voltage (RMS) Insulation resistance UNIT VIO = 500 V, Tamb = 150 °C (construction test only) Forward current Isi 130 mA Pso 265 mW VIOTM 8 kV Safety temperature Tsi 150 °C Comparative tracking index CTI 175 Power dissipation Rated impulse voltage Clearance distance 8.0 mm Creepage distance 8.0 mm Insulation distance (internal) 0.40 mm Note • According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. VIOTM 300 t1, t2 t3 , t4 ttest tstres Phototransistor Pso (mW) 250 200 = 1 s to 10 s =1s = 10 s = 12 s Vpd 150 VIOWM VIORM 100 IR-diode Isi (mA) 50 0 0 0 94 9182-2 25 50 75 100 125 Tsi - Safety Temperature (°C) Fig. 1 - Derating Diagram 150 13930 t3 ttest t4 t1 tTr = 60 s t2 t stres t Fig. 2 - Test Pulse Diagram for Sample Test according to DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5 Document Number: 83515 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.9, 01-Dec-15 TCLT100. Series www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Delay time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) td - 3 - μs Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) tr - 3 - μs Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) tf - 4.7 - μs Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) ts - 0.3 - μs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) ton - 6 - μs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) toff - 5 - μs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) ton - 9 - μs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) toff - 10 - μs IF IF 0 +5V IF 0 I C = 2 mA; adjusted through input amplitude tp IC t 100 % 90 % R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L = 1 MΩ C L = 20 pF 10 % 0 tr td t on 100 Ω tp td tr t on (= td + tr) 95 10804 Fig. 3 - Test Circuit, Non-Saturated Operation IF Pulse duration Delay time Rise time Turn-on time ts tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 5 - Switching Times +5V I F = 10 mA 0 IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 Fig. 4 - Test Circuit, Saturated Operation Document Number: 83515 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.9, 01-Dec-15 TCLT100. Series www.vishay.com Vishay Semiconductors 1.2 300 NCTR - Normalized CTR (sat) Ptot - Total Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Coupled device 250 200 Phototransistor 150 IR-diode 100 50 0 40 0.6 0.4 0.2 Normalized to CTR value: IF = 5 mA, VCE = 5 V, Tamb = 25 °C 80 -60 -40 -20 120 Tamb - Ambient Temperature (°C) 96 11700 40 60 80 100 120 1.4 NCTR - Normalized CTR (NS) Tamb = 110 °C Tamb = 75 °C Tamb = 25 °C Tamb = 0 °C Tamb = - 55 °C 1 0.1 Tamb = 0 °C 1.2 Tamb = -55 °C Tamb = 25 °C 1.0 0.8 0.6 Tamb = 75 °C 0.4 Tamb = 100 °C 0.2 Normalized to: IF = 5 mA, VCE = 5 V 0 0.6 0.8 1.0 1.2 1.4 1.6 0.1 VF - Forward Voltage (V) Fig. 7 - Forward Current vs. Forward Voltage 1 10 100 IF - Forward Current (mA) Fig. 10 - Normalized Current Transfer Ratio (non-saturated) vs. Forward Current 1.2 1.2 IF = 5 mA 1.0 0.8 0.6 0.4 Normalized to CTR value: IF = 5 mA, VCE = 5 V, Tamb = 25 °C 0 -60 -40 -20 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 8 - Normalized Current Transfer Ratio (non-saturated) vs. Ambient Temperature NCTR - Normalized CTR (sat) NCTR - Normalized CTR (non-saturated) 20 Fig. 9 - Normalized Current Transfer Ratio (saturated) vs. Ambient Temperature 100 0.2 0 Tamb - Ambient Temperature (°C) Fig. 6 - Total Power Dissipation vs. Ambient Temperature IF - Forward Current (mA) 0.8 0 0 10 1.0 1.0 0.8 VCE = 0.4 V Normalized to: IF = 5 mA, VCE = 5 V, Tamb = 25 °C Tamb = 0 °C Tamb = -55 - °C 0.6 0.4 Tamb = 25 °C 0.2 Tamb = 75 °C Tamb = 100 °C 0 0.1 1 10 100 IF - Forward Current (mA) Fig. 11 - Normalized Current Transfer Ratio (saturated) vs. Forward Current Document Number: 83515 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.9, 01-Dec-15 TCLT100. Series www.vishay.com Vishay Semiconductors 10 000 1.0 20 % used VCEsat - Collector Emitter Saturation Voltage (V) ICE0 - Leakage Current (nA) IF = 0 mA 1000 VCE = 40 V 100 10 VCE = 24 V 1 0.1 VCE = 12 V 0.01 0.8 CTR = 50 % used 0.6 0.4 0.2 10 % used 0.001 0 -60 -40 -20 0 20 40 60 80 100 120 Fig. 12 - Collector Dark Current vs. Ambient Temperature VCE = 5 V 10 1 0.1 1 100 10 IF - Forward Current (mA) 95 11027 20 mA IF = 50 mA 10 mA 5 mA 2 mA 1 1 mA 0.1 0.1 95 10985 1 10 VCE = 5 V 100 10 1 0.1 1 10 8 Fig. 14 - Collector Current vs. Collector Emitter Voltage Non-saturated operation VS = 5 V RL = 100 Ω ton 6 toff 4 2 0 100 VCE - Collector Emitter Voltage (V) 100 10 IF - Forward Current (mA) Fig. 16 - Current Transfer Ratio vs. Forward Current ton/toff - Turn-On/Turn-Off Time (µs) IC - Collector Current (mA) 100 10 1000 95 11029 Fig. 13 - Collector Current vs. Forward Current 100 10 IC - Collector Current (mA) Fig. 15 - Collector Emitter Saturation Voltage vs. Collector Current CTR - Current Transfer Ratio (%) IC - Collector Current (mA) 100 0.01 0.1 1 95 11028 Tamb - Ambient Temperature (°C) 0 95 11030 2 4 6 8 IC - Collector Current (mA) Fig. 17 - Turn-on/off Time vs. Collector Current Document Number: 83515 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.9, 01-Dec-15 TCLT100. Series ton/toff - Turn-On/Turn-Off Time (µs) www.vishay.com Vishay Semiconductors 50 Saturated operation VS = 5 V RL = 1 kΩ 40 30 toff 20 10 ton 0 5 0 10 15 20 IF - Forward Current (mA) 95 11031 Fig. 18 - Turn-on/off Time vs. Forward Current PACKAGE DIMENSIONS (in millimeters) 2.30 max. 4.10 max. 10.20 3.80 + 0.30 - 0.40 0.20 2.00 + 0.10 - 0.05 7.50 ± 0.20 0.10 Seating plane 0.45 ± 0.1 0.70 + 0.30 - 0.40 2.54 nom. 4 3 2.54 Possible footprint 0.90 8.20 1 22533 10.80 technical drawings according to DIN specifications 2 Pin no. 1 identification PACKAGE MARKING (example) TCLT1003 V YWW 68 Document Number: 83515 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.9, 01-Dec-15 TCLT100. Series www.vishay.com Vishay Semiconductors TAPE AND REEL DIMENSIONS (in millimeters) Ø 1.55 2.7 4 2 0.3 7.5 Tape slot in core 1.75 ESD sticker 10.6 16 330 (13") 5° 4.25 8 Ø 1.6 Regular, special or bar code label technical drawings according to DIN specification 17999 Fig. 19 - Reel Dimensions (3000 units per reel) SOLDER PROFILE 22662 Fig. 20 - Tape Dimensions HANDLING AND STORAGE CONDITIONS ESD level: HBM class 2 300 max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 Temperature (°C) 2.3 Direction of pulling out Floor life: unlimited Conditions: Tamb < 30 °C, RH < 85 % Moisture sensitivity level 1, according to J-STD-020 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp down 6 °C/s 50 max. ramp up 3 °C/s 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 21 - Lead (Pb)-free Reflow Solder Profile according to J-STD-020 Document Number: 83515 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.9, 01-Dec-15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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