TCET1600, TCET1600G Datasheet

TCET1600, TCET1600G
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input
FEATURES
C
• Isolation materials according to UL94 V-O
E
• Pollution degree 2 (DIN/VDE 0110 /resp. IEC
60664)
• Climatic classification 55/100/21 (IEC 60068
part 1)
A
17195-1
• Special construction: therefore, extra low
coupling capacity of typical 0.2 pF, high
common mode rejection
C
4 PIN
V
D E
C
• Low temperature coefficient of CTR
• Rated
impulse
voltage
VIOTM = 10 kV peak
17197_4
DESCRIPTION
The TCET1600, TCET1600G consists of a phototransistor
optically coupled to 2 gallium arsenide infrared-emitting
diodes in a single (4 pin) package.
VDE STANDARDS
(transient
overvoltage)
• Isolation test voltage (partial discharge test voltage)
Vpd = 1.6 kV peak
• Rated
isolation
VIOWM = 600 VRMS
voltage
(RMS
includes
DC)
• Rated recurring peak voltage (repetitive) VIORM = 890 Vpeak
These couplers perform safety functions according to the
following equipment standards:
• DIN EN 60747-5-2 (VDE 0884)
Optocoupler for electrical safety requirements
• IEC 60950/EN 60950
Office machines (applied for reinforced isolation for mains
voltage ≤ 400 VRMS)
• VDE 0804
Telecommunication apparatus and data processing
• IEC 60065
Safety for mains-operated electronic and related
household apparatus
• VDE 0700/IEC 335
Household equipment
• VDE 0160
Electronic equipment for electrical power installation
• VDE 0750/IEC 60601
Medical equipment
• Thickness though insulation ≥ 0.75 mm
• Creepage current resistance according to VDE 0303/
IEC 60112 comparative tracking index: CTI ≥ 175
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H, double protection
• CSA 22.2 bulletin 5A
• DIN EN 60747-5-2 (VDE 0884)
• DIN EN 60747-5-5 (pending)
• FIMKO
ORDERING INFORMATION
T
C
E
T
1
6
0
0
#
DIP
DIP, 400 mil
7.62 mm
10.16 mm
PART NUMBER
CTR (%)
AGENCY CERTIFIED/PACKAGE
± 5 mA
UL, cUL, VDE, FIMKO
20 to 300
DIP-4, single channel
TCET1600
DIP-4, single channel, 400 mil
TCET1600G
Note
• G = leadform 10.16 mm; G is not marked on the body.
Document Number: 83538
Rev. 1.9, 10-Dec-10
For technical questions, contact: [email protected]
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1
TCET1600, TCET1600G
Vishay Semiconductors Optocoupler, Phototransistor Output,
AC Input
ABSOLUTE MAXIMUM RATINGS
PARAMETER
(1)
(Tamb = 25 °C, unless otherwise specified)
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6
V
Forward current
IF
± 60
mA
tp ≤ 10 μs
Forward surge current
IFSM
± 1.5
A
Pdiss
100
mW
Tj
125
°C
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
7
V
IC
50
mA
Power dissipation
Junction temperature
OUTPUT
Collector current
tp/T = 0.5, tp ≤ 10 ms
Collector peak current
Power dissipation
Junction temperature
ICM
100
mA
Pdiss
150
mW
Tj
125
°C
VISO
5300
VRMS
VIORM
890
VP
COUPLER
Isolation test voltage (RMS)
t=1s
Isolation voltage
Total power dissipation
Ptot
250
mW
Operating ambient temperature range
Tamb
- 55 to + 100
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Tsld
260
°C
Soldering temperature (2)
2 mm from case, t ≤ 10 s
Notes
(1) Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices (DIP).
ELECTRICAL CHARACTERISTCS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
IF = ± 50 mA
VR = 0 V, f = 1 MHz
MIN.
TYP.
MAX.
VF
1.25
1.6
Cj
50
UNIT
INPUT
Forward voltage
Junction capacitance
V
pF
OUTPUT
Collector emitter voltage
IC = 100 μA
VCEO
70
V
Emitter collector voltage
IE = 100 μA
VECO
7
V
VCE = 20 V, IF = 0, E = 0
ICEO
100
nA
Collector emitter saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
0.3
V
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100 Ω
fc
100
kHz
f = 1 MHz
Ck
0.3
pF
Collector dark current
COUPLER
Coupling capacitance
Note
• Minimum and maximum values were tested requirements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
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2
For technical questions, contact: [email protected]
Document Number: 83538
Rev. 1.9, 10-Dec-10
TCET1600, TCET1600G
Optocoupler, Phototransistor Output, Vishay Semiconductors
AC Input
CURRENT TRANSFER RATIO
PARAMETER
IC/IF
TEST CONDITION
SYMBOL
MIN.
VCE = 5 V, IF = ± 5 mA
CTR
20
TYP.
MAX.
UNIT
300
%
MAX.
UNIT
IF
275
mA
Pdiss
400
mW
VIOTM
10
kV
Tsi
175
°C
MAXIMUM SAFETY RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
INPUT
Forward current
OUTPUT
Power dissipation
COUPLER
Rated impulse voltage
Safety temperature
Note
• According to DIN EN 60747-5-2 (VDE 0884) (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety
ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Partial discharge test voltage routine test
100 %, ttest = 1 s
Vpd
1.669
Partial discharge test voltage lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
VIOTM
10
kV
Vpd
1.424
kV
VIO = 500 V
RIO
1012
Ω
RIO
1011
Ω
RIO
109
Ω
VIO = 500 V, Tamb = 100 °C
Ptot - Total Power Dissipation (mW)
Insulation resistance
MAX.
UNIT
kV
VIOTM
450
t1, t2
t3 , t4
ttest
tstres
400
Phototransistor
Psi (mW)
350
300
= 1 to 10 s
=1s
= 10 s
= 12 s
VPd
250
VIOWM
VIORM
200
IR-diode
Isi (mA)
150
100
50
0
t3 ttest t4
0
0
22441
VIO = 500 V, Tamb = 150 °C
(construction test only)
TYP.
25
50
75
100
125
150
175
13930
t1
tTr = 60 s
Tsi - Safety Temperature (°C)
Fig. 1 - Derating Diagram
Document Number: 83538
Rev. 1.9, 10-Dec-10
t2
t stres
t
Fig. 2 - Test Pulse Diagram for Sample Test acc. to
DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5
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3
TCET1600, TCET1600G
Vishay Semiconductors Optocoupler, Phototransistor Output,
AC Input
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Delay time
VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3)
td
3
μs
Rise time
VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3)
tr
3
μs
Turn-on time
VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3)
ton
6
μs
Storage time
VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3)
ts
0.3
μs
Fall time
VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3)
tf
4.7
μs
Turn-off time
VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3)
toff
5
μs
Turn-on time
VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4)
ton
9
μs
Turn-off time
VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4)
toff
10
μs
IF
IF
0
+5V
IF
0
IC = 2 mA; adjusted through
input amplitude
RG = 50 Ω
tp
= 0.01
T
tp = 50 µs
50 Ω
100 Ω
IF = 10 mA
tr
td
ts
t on
tp
td
tr
t on (= td + tr)
Fig. 3 - Test Circuit, Non-Saturated Operation
IF
100 %
90 %
Oscilloscope
RL > 1 MΩ
CL < 20 pF
13343
0
t
10 %
0
Channel I
Channel II
tp
IC
Pulse duration
Delay time
Rise time
Turn-on time
tf
t off
ts
tf
t off (= ts + tf)
t
Storage time
Fall time
Turn-off time
96 11698
Fig. 5 - Switching Times
+5V
IC
RG = 50
tp
= 0.01
T
tp = 50 µs
Channel I
Channel II
50
Oscilloscope
RL > 1 M
CL < 20 pF
1k
13344
Fig. 4 - Test Circuit, Saturated Operation
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For technical questions, contact: [email protected]
Document Number: 83538
Rev. 1.9, 10-Dec-10
TCET1600, TCET1600G
Optocoupler, Phototransistor Output, Vishay Semiconductors
AC Input
Ptot - Total Power Dissipation (mW)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
300
10 000
250
200
Phototransistor
150
IR-diode
100
IF = 0 mA
ICE0 - Leakage Current (nA)
Coupled device
50
1000
100
40
80
0.01
0.001
- 60 - 40 - 20
40
60
80 100
30
IC - Collector Current (mA)
VF - Forward Voltage (V)
20
Fig. 9 - Leakage Current vs. Ambient Temperature
1.8
1.6
Tamb = 0 °C
Tamb = - 40 °C
1.4
Tamb = - 55 °C
1.2
Tamb = 25 °C
Tamb = 50 °C
Tamb = 75 °C
1.0
0.8
Tamb = 100 °C
25
IF = 25 mA
20
IF = 10 mA
15
10
IF = 5 mA
5
IF = 1 mA
IF = 2 mA
0
0.6
0.1
1
10
0
100
IF - Forward Current (mA)
22462
22464
Fig. 7 - Forward Current vs. Forward Voltage
0.1
0.2
0.3
0.4
VCE - Collector Emitter Voltage (sat) (V)
Fig. 10 - Collector Current vs. Collector Emitter Voltage (sat)
50
1.4
45
NCTR - Normalized CTR (NS)
IC - Collector Current (mA)
0
Tamb - Ambient Temperature (°C)
22465
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
IF = 30 mA
40
IF = 20 mA
35
30
IF = 15 mA
25
IF = 10 mA
20
15
IF = 5 mA
10
5
1.2
0
1
2
3
4
5
6
7
IF = 5 mA
0.8
0.6
Fig. 8 - Collector Current vs. Collector Emitter Voltage (NS)
Document Number: 83538
Rev. 1.9, 10-Dec-10
IF = 1 mA
0.4
0.2
0
- 60 - 40 - 20
8
VCE - Collector Emitter Voltage (NS) (V)
VCE = 5 V
IF = 10 mA
1.0
0
22463
VCE = 12 V
0.1
120
Tamb - Ambient Temperature (°C)
96 11700
VCE = 24V
1
0
0
VCE = 40 V
10
22466
0
20
40
60
80 100
Tamb - Ambient Temperature (°C)
Fig. 11 - Normalized CTR (NS) vs. Ambient Temperature
For technical questions, contact: [email protected]
www.vishay.com
5
TCET1600, TCET1600G
Vishay Semiconductors Optocoupler, Phototransistor Output,
AC Input
0
VCE = 0.4 V
IF = 5 mA
- 40
IF = 10 mA
0.8
0.6
IF = 1 mA
0.4
VCE = 5 V
- 20
1.0
Phase (deg)
NCTR - Normalized CTR (sat)
1.2
- 60
- 80
- 100
- 120
0.2
- 140
0
- 60 - 40 - 20
- 160
0
20
40
60
80 100
1
10
Fig. 12 - Normalized CTR (sat) vs. Ambient Temperature
1000
VCE = 5 V
VCC = 5 V
Tamb = 0 °C
1.2
Tamb = - 40 °C
1.0
Tamb = - 55 °C
0.8
0.6
Tamb = 25 °C
0.4
100
10
Tamb = 50 °C
Tamb = 75 °C
0.2
Tamb = 100 °C
1
0.0
0.1
1
10
0.1
100
IF - Forward Current (mA)
22468
Tamb = 0 °C
Tamb = - 40 °C
0.8 T = - 55 °C
amb
0.6
Tamb = 25 °C
0.4
Tamb = 50 °C
0.2
Tamb = 75 °C
Tamb = 100 °C
0.0
100
1000
ton, toff - Switching Time (μs)
VCE = 0.4 V
10
IC (mA)
Fig. 16 - FCTR vs. IC
1.2
1.0
1
22471
Fig. 13 - Normalized CTR (NS) vs. Forward Current
NCTR - Normalized CTR (sat)
1000
Fig. 15 - FCTR vs. Phase Angle
FCTR (kHz)
NCTR - Normalized CTR (NS)
1.4
100
f (kHz)
22470
Tamb - Ambient Temperature (°C)
22467
VCE = 5 V, IF = 10 mA
100
toff (μs)
10
ton (μs)
1
0.1
0.1
22469
1
10
100
IF - Forward Current (mA)
Fig. 14 - Normalized CTR (sat) vs. Forward Current
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6
0
22472
5
10
15
20
RL - Load Resistance (kΩ)
Fig. 17 - Switching Time vs. Load Resistance
For technical questions, contact: [email protected]
Document Number: 83538
Rev. 1.9, 10-Dec-10
TCET1600, TCET1600G
Optocoupler, Phototransistor Output, Vishay Semiconductors
AC Input
PACKAGE DIMENSIONS in millimeters
2
1
Pin one ID
6.48
6.81
ISO method A
3
4
4.55
4.83
7.62 typ.
0.79 typ.
0.76
1.14
1.27 typ.
3.30
3.81
i178027
5.84
6.35
10°
4°
typ.
2.79
3.30
0.508
0.89
0.46
0.56
0° to 15°
0.2
0.3
1.27
2.54
Option 6
7.62 typ.
3.5 ± 0.3
0.1 min.
2.55 ± 0.25
20802-13
10.16 typ.
PACKAGE MARKING (example)
TCET1600
V YWW H 68
21764-93
Document Number: 83538
Rev. 1.9, 10-Dec-10
For technical questions, contact: [email protected]
www.vishay.com
7
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Revision: 02-Oct-12
1
Document Number: 91000