TCLT101. Series www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, LSOP-4, 110 °C Rated, Long Mini-Flat Package C E 4 3 1 2 A C FEATURES • • • • • • • • • 17295-5 DESCRIPTION SMD low profile 4 lead package High isolation 5000 VRMS CTR flexibility available see order information Extra low coupling capacitance Connected base DC input with transistor output Temperature range -55 °C to +110 °C Creepage distance > 8 mm Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AGENCY APPROVALS The TCLT101. series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead LSOP package. • • • • APPLICATIONS • Switchmode power supplies • Computer peripheral interface • Microprocessor system interface UL1577, file no. E76222 cUL - file no. E76222, equivalent to CSA bulletin 5A DIN EN 60747-5-5 FIMKO: EN 60950 ORDERING INFORMATION T C L T 1 0 1 LSOP-4 # 10.2 mm PART NUMBER AGENCY CERTIFIED/PACKAGE CTR (%) 5 mA 10 mA 5 mA UL, cUL, VDE, FIMKO 50 to 600 63 to 125 100 to 200 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400 LSOP-4 TCLT1010 TCLT1012 TCLT1013 TCLT1015 TCLT1016 TCLT1017 TCLT1018 TCLT1019 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA Forward surge current tp ≤ 10 μs IFSM 1.5 A Pdiss 100 mW Tj 125 °C Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V mA Power dissipation Junction temperature OUTPUT Collector current Collector peak current Power dissipation Junction temperature Rev. 1.9, 19-Jan-16 tp/T = 0.5, tp ≤ 10 ms IC 50 ICM 100 mA Pdiss 150 mW Tj 125 °C Document Number: 81256 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCLT101. Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Total power dissipation Ptot 250 mW Operating ambient temperature range Tamb -55 to +110 °C Storage temperature range Tstg -55 to +125 °C Soldering temperature (1) Tsld 260 °C Ptot - Total Power Dissipation (mW) Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Wave soldering three cycles are allowed. Also refer to “Assembly Instruction” (www.vishay.com/doc?80054). 300 Coupled device 250 200 Phototransistor 150 100 IR-diode 50 0 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 1 - Total Power Dissipation vs. Ambient Temperature ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 50 mA VF - 1.25 1.6 V VR = 0 V, f = 1 MHz Cj - 50 - pF Collector emitter voltage IC = 1 mA VCEO 70 - - V Emitter collector voltage IE = 100 μA VECO 7 - - V VCE = 20 V, IF = 0 A ICEO - 10 100 nA Junction capacitance OUTPUT Collector emitter leakage current COUPLER Collector emitter saturation voltage Cut-off frequency Coupling capacitance IF = 10 mA, IC = 1 mA VCEsat - - 0.3 V VCE = 5 V, IF = 10 mA, RL = 100 Ω fc - 110 - kHz f = 1 MHz Ck - 0.3 - pF Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Rev. 1.9, 19-Jan-16 Document Number: 81256 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCLT101. Series www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT VCE = 5 V, IF = 5 mA TCLT1010 CTR 50 - 600 % TCLT1012 CTR 63 - 125 % TCLT1013 CTR 100 - 200 % TCLT1012 CTR 22 45 - % TCLT1013 CTR 34 70 - % TCLT1015 CTR 50 - 150 % TCLT1016 CTR 100 - 300 % TCLT1017 CTR 80 - 160 % TCLT1018 CTR 130 - 260 % TCLT1019 CTR 200 - 400 % VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 1 mA IC/IF VCE = 5 V, IF = 5 mA SAFETY AND INSULATION RATINGS PARAMETER Partial discharge test voltage - routine test Partial discharge test voltage lot test (sample test) TEST CONDITION SYMBOL VALUE 100 %, ttest = 1 s Vpd 1.6 kV tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 8 kV Isolation test voltage (RMS) Insulation resistance UNIT Vpd 1.3 kV VISO 5000 VRMS VIO = 500 V RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 Ω Isi 130 mA Pso 265 mW Forward current Power dissipation Rated impulse voltage VIOTM 8 kV Tsi 150 °C 8.0 mm Creepage distance 8.0 mm Insulation distance (internal) 0.40 mm Safety temperature Clearance distance Note • According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. VIOTM 300 t1, t2 t3 , t4 ttest tstres Phototransistor Pso (mW) 250 200 = 1 s to 10 s =1s = 10 s = 12 s Vpd 150 VIOWM VIORM 100 IR-diode Isi (mA) 50 0 0 0 94 9182-2 25 50 75 100 Tsi - Safety Temperature (°C) Fig. 2 - Derating Diagram Rev. 1.9, 19-Jan-16 125 150 13930 t3 ttest t4 t1 tTr = 60 s t2 t stres t Fig. 3 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5 Document Number: 81256 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCLT101. Series www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Delay time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) td - 3 - μs Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) tr - 3 - μs Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) tf - 4.7 - μs Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) ts - 0.3 - μs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) ton - 6 - μs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) toff - 5 - μs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) ton - 9 - μs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) toff - 10 - μs IF IF +5V IF 0 0 I C = 2 mA; adjusted through input amplitude R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Oscilloscope R L = 1 MΩ C L = 20 pF Channel II 50 Ω 10 % 0 tr td 100 Ω ts t on 95 10804 Fig. 4 - Test Circuit, Non-Saturated Operation t 100 % 90 % tp td tr t on (= td + tr) IF tp IC Pulse duration Delay time Rise time Turn-on time tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 6 - Switching Times +5V I F = 10 mA 0 IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 Fig. 5 - Test Circuit, Saturated Operation Rev. 1.9, 19-Jan-16 Document Number: 81256 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCLT101. Series www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 14 Tamb = 110 °C Tamb = 75 °C Tamb = 25 °C Tamb = 0 °C Tamb = - 55 °C 10 IC - Collector Current (mA) IF - Forward Current (mA) 100 1 0.1 IF = 10 mA 12 10 8 6 4 0.8 1.0 1.2 1.4 1.6 0 VF - Forward Voltage (V) IF = 2 mA IF = 35 mA 45 IF = 30 mA 40 35 IF = 25 mA 30 IF = 20 mA 25 20 IF = 15 mA 15 10 IF = 10 mA IF = 1 mA 5 IF = 5 mA 0 0 1 2 3 4 5 6 7 8 0.2 0.3 0.4 9 10 Fig. 10 - Collector Current vs. Collector Emitter Voltage (saturated) NCTR - Normalized CTR (non-saturated) 55 50 0.1 VCE - Collector Emitter Voltage (sat) (V) Fig. 7 - Forward Voltage vs. Forward Current IC - Collector Current (mA) IF = 1 mA 2 0 0.6 1.2 1.0 0.8 0.6 0.4 0.2 0 Fig. 8 - Collector Current vs. Collector Emitter Voltage (NS) Normalized to CTR value: IF = 10 mA, VCE = 5 V, Tamb = 25 °C -60 -40 -20 VCE - Collector Emitter Voltage (non-sat) (V) 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 11 - Normalized Current Transfer Ratio (non-saturated) vs. Ambient Temperature 10 000 1000 VCE = 40 V 100 10 VCE = 24 V 1 0.1 VCE = 12 V 0.01 0.001 NCTR - Normalized CTR (sat) 1.2 IF = 0 mA ICE0 - Leakage Current (nA) IF = 5 mA 1.0 0.8 0.6 0.4 0.2 0 -60 -40 -20 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 9 - Leakage Current vs. Ambient Temperature Rev. 1.9, 19-Jan-16 Normalized to CTR value: IF = 10 mA, VCE = 5 V, Tamb = 25 °C -60 -40 -20 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 12 - Normalized Current Transfer Ratio (saturated) vs. Ambient Temperature Document Number: 81256 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCLT101. Series www.vishay.com Vishay Semiconductors 1000 Tamb = 0 °C 1.2 VCC = 5 V Tamb = -55 °C Tamb = 25 °C 1.0 FCTR (kHz) NCTR - Normalized CTR (NS) 1.4 0.8 0.6 Tamb = 75 °C 0.4 Tamb = 100 °C Normalized to: IF = 5 mA, VCE = 5 V, Tamb = 25 °C 0.2 0 0.1 1 10 100 10 1 0.1 100 1 IF - Forward Current (mA) Fig. 13 - Normalized CTR (non-saturated) vs. Forward Current 1000 VCE = 0.4 V Normalized to: IF = 5 mA, VCE = 5 V, Tamb = 25 °C 1.0 0.8 Tamb = 0 °C VCE = 5 V, IF = 5 mA Tamb = - 55 °C 0.6 0.4 Tamb = 25 °C 0.2 Tamb = 75 °C Tamb = 100 °C 0 0.1 1 ton, toff Switching Time (μs) NCTR - Normalized CTR (sat) 100 Fig. 16 - CTR Frequency vs. Collector Current 1.2 100 1 0 100 VCE = 5 V RL = 100 Ω -60 -80 -100 RL = 1000 Ω -140 -160 1 10 100 f - Frequency (kHz) Fig. 15 - Phase Angle vs. Frequency Rev. 1.9, 19-Jan-16 10 15 20 1000 Fig. 17 - Switching Time vs. Load Resistance VCEsat - Collector Emitter Voltage (V) 0 -120 5 RL - Load Resistance (kΩ) Fig. 14 - Normalized CTR (saturated) vs. Forward Current -40 ton (μs) 0.1 10 -20 toff (μs) 10 IF - Forward Current (mA) Phase Angle (deg) 10 IC (mA) 0.40 0.35 IF = 10 mA 0.30 Ic = 5 mA 0.25 0.20 Ic = 2 mA 0.15 0.10 0.05 Ic = 1 mA 0.00 -60 -40 -20 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 18 - Collector Emitter Voltage vs. Ambient Temperature (saturated) Document Number: 81256 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCLT101. Series www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS (in millimeters) 2.30 max. 4.10 max. 10.20 3.80 + 0.30 - 0.40 0.20 2.00 + 0.10 - 0.05 7.50 ± 0.20 0.10 Seating plane 0.45 ± 0.1 0.70 + 0.30 - 0.40 2.54 nom. 4 3 2.54 Possible footprint 0.90 8.20 1 22533 10.80 technical drawings according to DIN specifications 2 Pin no. 1 identification PACKAGE MARKING (example of TCLT1013) TCLT1013 V YWW 68 TAPE AND REEL DIMENSIONS (in millimeters) Ø 1.55 2.7 4 2 0.3 7.5 Tape slot in core 1.75 ESD sticker 10.6 16 330 (13") 5° 4.25 8 Ø 1.6 Regular, special or bar code label 17999 Fig. 19 - Reel Dimensions (3000 units per reel) Rev. 1.9, 19-Jan-16 2.3 Direction of pulling out technical drawings according to DIN specification 22662 Fig. 20 - Tape Dimensions Document Number: 81256 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCLT101. Series www.vishay.com Vishay Semiconductors SOLDER PROFILE HANDLING AND STORAGE CONDITIONS ESD level: HBM class 2 300 255 °C 240 °C 217 °C 250 Temperature (°C) max. 260 °C 245 °C Floor life: unlimited Conditions: Tamb < 30 °C, RH < 85 % Moisture sensitivity level 1, according to J-STD-020 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp down 6 °C/s 50 max. ramp up 3 °C/s 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 21 - Lead (Pb)-free Reflow Solder Profile according to J-STD-020 Rev. 1.9, 19-Jan-16 Document Number: 81256 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000