CNY65Exi www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, ATEX Certified FEATURES Top view A (±) • ATEX certificate: PTB 03 ATEX 2033 U www.vishay.com/doc?85361 C • Suitable for intrinsic safe circuits for gas and dust • Gas safety provision: II (1) G (EX ia) IIC • Dust safety provision: II (1) D (EX ia) IIIC 16965-1 C (±) • Conforms to EN60079-0:2012 E • Qualified for continuously, longterm, or frequently dangerous explosive environments, zone 0 DESCRIPTION • Isolation voltage (VISO) of 11 600 Vpeak for 1 minute The CNY65Exi consists of a phototransistor optically coupled to an infrared-emitting diode in a 4 pin plastic package. The components are mounted opposite one another, with a distance between input and output of > 3.0 mm; meeting the highest of safety requirements. • Distance from emitter to detector through insulation ≥ 3 mm The CNY65Exi is ATEX certificated for explosive atmospheres according to the European Guide line 94/9/EG. AGENCY APPROVALS • ATEX • CTR from 50 % to 300 % • Very low coupling capacity (CK) - 0.3 pF superior noise immunity between input and output pins • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS : PTB 03 ATEX 2033 U EN 60079-0:2012 EN 60079-11:2012 EN 60079-26:2007 • Electronics used in potentially explosive gas and dust environments - Safety related process automation and instrumentation - Natural gas metering and flow measurement - Power and motor switching - Power supplies, metering, and data acquisition - Lighting and signaling - Petrol and grain transport and storage ORDERING INFORMATION DIP-4 C N Y PART NUMBER 6 5 X CTR BIN AGENCY CERTIFIED/PACKAGE E x i PACKAGE OPTION 15.24 mm CTR (%) ATEX 50 to 300 100 to 200 DIP-4, HV, high isolation distance CNY65Exi CNY65BExi Rev. 2.5, 10-Feb-15 Document Number: 83541 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY65Exi www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 5 V Forward current IF 75 mA tp ≤ 10 μs IFSM 1.5 A Pdiss 120 mW Tj 100 °C Collector emitter voltage VCEO 32 V Emitter collector voltage VECO 7 V Forward surge current Power dissipation Junction temperature OUTPUT Collector current Collector peak current tp/T = 0.5, tp ≤ 10 ms Power dissipation Junction temperature IC 50 mA ICM 100 mA Pdiss 130 mW Tj 100 °C COUPLER VISO 11.6 kV Total power dissipation Ptot 250 mW Ambient temperature range Tamb -55 to +85 °C Storage temperature range Tstg -55 to +100 °C Tsld 260 °C DC isolation test voltage Soldering temperature t = 1 min 2 mm from case, t ≤ 10 s Note • Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 50 mA VF 1.25 1.6 V Collector emitter voltage IC = 1 mA VCEO 32 V Emitter collector voltage IE = 100 μA VECO 7 V VCE = 20 V, If = 0, E = 0 ICEO t = 1 min VISO (1) VIO = 1 kV, 40 % relative humidity RIO (1) Collector saturation voltage IF = 10 mA, IC = 1 mA VCEsat Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc f = 1 MHz Ck INPUT Forward voltage OUTPUT Collector dark current 200 nA COUPLER DC isolation test voltage Isolation resistance Coupling capacitance 11.6 kV Ω 1012 0.3 V 110 kHz 0.3 pF Notes • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (1) Related to standard climate 23/50 DIN 50014. CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER IC/IF Rev. 2.5, 10-Feb-15 TEST CONDITION VCE = 5 V, IF = 10 mA PART SYMBOL MIN. TYP. MAX. CNY65Exi CTR 50 100 300 UNIT % CNY65BExi CTR 100 200 % Document Number: 83541 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY65Exi www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Delay time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 1) td MIN. TYP. 2.6 MAX. UNIT μs Rise time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 1) tr 2.4 μs Fall time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 1) tf 2.4 μs Storage time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 1) ts 0.3 μs Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 1) ton 5 μs Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 1) toff 3 μs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 2) ton 25 μs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 2) toff 42.5 μs IF IF 0 0 +5V IF IC = 5 mA; adjusted through input amplitude RG = 50 tp = 0.01 T tp = 50 µs Channel I Channel II 50 100 Oscilloscope RL 1 M CL 20 pF Fig. 1 - Test Circuit, Non-Saturated Operation IF t 100 % 90 % 10 % 0 tr td ts t on tp td tr t on (= td + tr) 95 10900 tp IC Pulse duration Delay time Rise time Turn-on time tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 3 - Switching Times +5V I F = 10 mA 0 IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 Fig. 2 - Test Circuit, Saturated Operation Rev. 2.5, 10-Feb-15 Document Number: 83541 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY65Exi www.vishay.com Vishay Semiconductors Ptot - Total Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 200 ICEO - Collector Dark Current, with open Base (nA) 1000 160 120 Coupled device 80 Phototransistor IR-diode 40 0 95 11003 25 50 75 10 100 Tamb - Ambient Temperature (°C) 0 10 20 30 40 50 60 70 80 90 100 96 12000 Fig. 4 - Total Power Dissipation vs. Ambient Temperature Tamb - Ambient Temperature (°C) Fig. 7 - Collector Dark Current vs. Ambient Temperature 100 IC - Collector Current (mA) 1000 IF - Forward Current (mA) 100 1 0 100 10 1 0 0.4 0.8 1.2 1.6 2.0 VF - Forward Voltage (V) 96 11862 1 100 10 IF - Forward Current (mA) 100 1.1 1.0 0.9 0.8 0.7 0.6 0.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 Tamb - Ambient Temperature (°C) Fig. 6 - Relative Current Transfer Ratio vs. Ambient Temperature Rev. 2.5, 10-Feb-15 IC - Collector Current (mA) VCE = 5 V IF = 10 mA 1.2 96 11911 0.1 Fig. 8 - Collector Current vs. Forward Current 1.5 1.3 1 95 11012 Fig. 5 - Forward Current vs. Forward Voltage 1.4 VCE = 5 V 10 0.01 0.1 0.1 CTRrel - Relative Current Transfer Ratio VCE = 20 V IF = 0 IF = 50 mA 10 mA 10 5 mA 2 mA 1 1 mA 0.1 0.1 95 11013 1 10 100 VCE - Collector Emitter Voltage (V) Fig. 9 - Collector Current vs. Collector Emitter Voltage Document Number: 83541 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY65Exi www.vishay.com Vishay Semiconductors ton/toff - Turn-on/Turn-off Time (µs) 1.0 VCEsat - Collector Emitter Saturation Voltage (V) 0.9 0.8 0.7 CTR = 50 % 0.6 0.5 0.4 0.3 0.2 20 % 0.1 10 % 0.0 1 10 100 IC - Collector Current (mA) 96 11912 Non-saturated operation VS = 5 V RL = 100 Ω ton 15 toff 10 5 0 0 95 11016 Fig. 10 - Collector Emitter Saturation Voltage vs. Collector Current CTR - Current Transfer Ratio (%) 20 2 4 6 8 10 IC - Collector Current (mA) Fig. 13 - Turn-on/Turn-off Time vs. Collector Current 1000 VCE = 5 V 100 10 1 0.1 1 100 10 IF - Forward Current (mA) 95 11015 ton/toff - Turn-on/Turn-off Time (µs) Fig. 11 - Current Transfer Ratio vs. Forward Current 50 toff 40 30 ton 20 Saturated operation VS = 5 V RL = 1 kΩ 10 0 0 95 11017 5 10 15 20 IF - Forward Current (mA) Fig. 12 - Turn-on/Turn-off Time vs. Forward Current Rev. 2.5, 10-Feb-15 Document Number: 83541 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY65Exi www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 17.8 ± 0.1 9.1 ± 0.3 6.1 ± 0.1 9.6 ± 0.1 15.24 ± 0.2 7.62 ± 0.2 technical drawings according to DIN specifications 4 0. 5 0. A Cath Coll Weight: ca. 1.40 g Creepage distance: > 14 mm Air path: > 14 mm after mounting on PC board E Drawing-No.: 6.544-5036.01-1 Issue: 2; 10.11.98 14763 CNY65BExi V 818 J 69 II (1) G [Ex ia] IIC II (1) D [Ex ia] IIIC PTB 03 ATEX 2033 U VISHAY PACKAGE MARKING (example of CNY65BExi) HANDLING AND STORAGE CONDITIONS ESD level: HBM class 2 Rev. 2.5, 10-Feb-15 Document Number: 83541 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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