VISHAY CNY65EXI

CNY65Exi
Vishay Telefunken
Optocoupler with Phototransistor Output
Description
The CNY65Exi consists of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode
in a 4-lead plastic package.
The single components are mounted in opposite oneanother, providing a distance between input and
output for highest safety requirements of > 3 mm.
Applications
Galvanically separated circuits, suitable for intrinsic
safety circuits
Electrical apparatus used in a potentially explosive
atmosphere:
EN 50014-1977/VDE 0171 Part 1/5.78
General instructions
EN 50020-1977/VDE 0171 Part 7/5.78
Intrinsic safety ‘i’ section: 5.5, 5.5.4, 5.7
95 10536
Features
D Suitable for intrinsic safety circuits according to
A (+)
C
C (–)
E
test certificate No. Ex-81/2158 of PTB
D Isolation material according to
D Low temperature coefficient of CTR
D Creepage current resistance of isolation material
according to VDE 0303/DIN 53480: KC ≥ 475
95 10850
UL94 – VO – flammability class
D Isolation test voltage 11.6 kV
D Test class 25/100/21 DIN 40045
D Very low coupling capacity of typical 0.3 pF therefore high noise voltage resistant
D Current Transfer Ratio (CTR) = 50 to 300%
D Coupling System J
Order Instruction
Ordering Code
CNY65Exi
126
CTR Ranking
50 to 300%
Remarks
Exi = Intrinsic safety
Rev. A3, 11–Jan–99
CNY65Exi
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward Current
Forward surge current
Power dissipation
Junction temperature
Test Conditions
tp ≤ 10 ms
Tamb ≤ 25°C
Symbol
VR
IF
IFSM
PV
Tj
Value
5
75
1.5
120
100
Unit
V
mA
A
mW
°C
Symbol
VCEO
VECO
IC
ICM
PV
Tj
Value
32
7
50
100
130
100
Unit
V
V
mA
mA
mW
°C
Symbol
VIO
Ptot
Tamb
Tstg
Tsd
Value
11.6
250
–55 to +85
–55 to +100
260
Unit
kV
mW
°C
°C
°C
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Test Conditions
tp/T = 0.5, tp ≤ 10 ms
Tamb ≤ 25°C
Coupler
Parameter
DC isolation test voltage
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
Rev. A3, 11–Jan–99
Test Conditions
t = 1 min
Tamb ≤ 25°C
2 mm from case, t ≤ 10 s
127
CNY65Exi
Vishay Telefunken
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Test Conditions
IF = 50 mA
Symbol
VF
Min.
Typ.
1.25
Max.
1.6
Unit
V
Test Conditions
IC = 1 mA
IE = 100 mA
VCE = 20 V, If = 0, E = 0
Symbol
VCEO
VECO
ICEO
Min.
32
7
Typ.
Max.
Unit
V
V
nA
Test Conditions
t = 1 min
VIO = 1 kV,
40% relative humidity
IF = 10 mA, IC = 1 mA
Symbol
VIO1)
RIO1)
Min.
11.6
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector dark current
200
Coupler
Parameter
DC isolation test voltage
Isolation resistance
Collector saturation
voltage
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100 W
Coupling capacitance
f = 1 MHz
1) Related to standard climate 23/50 DIN 50014
Typ.
0.3
110
Ck
Unit
kV
W
1012
VCEsat
fc
Max.
V
kHz
0.3
pF
Current Transfer Ratio (CTR)
Parameter
IC/IF
128
Test Conditions
VCE = 5 V, IF = 10 mA
Type
CNY65Exi
Symbol
CTR
Min.
0.5
Typ.
1
Max.
3
Unit
Rev. A3, 11–Jan–99
CNY65Exi
Vishay Telefunken
Switching Characteristics
Parameter
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
Symbol
td
tr
tf
ts
ton
toff
ton
toff
VS = 5 V, IF = 10 mA, RL = 1 kW (see figure 2)
Typ.
2.6
2.4
2.4
0.3
5.0
3.0
25.0
42.5
Unit
ms
ms
ms
ms
ms
ms
ms
ms
+5V
IF
IF
0
Test Conditions
VS = 5 V, IC = 5 mA, RL = 100 W (see figure 1)
IC = 5 mA; Adjusted trough
input amplitude
RG = 50 W
tp
0.01
T
+
96 11698
IF
tp = 50 ms
0
Channel I
50 W
100 W
Channel II
RL ≥ 1 M W
CL ≤ 20 pF
95 10900
t
tp
Oscilloscope
IC
100%
90%
Figure 1. Test circuit, non-saturated operation
10%
0
IF
0
IF = 10 mA
td
IC
RG = 50 W
tp
0.01
T
+
ts
ton
tp = 50 ms
Channel I
50 W
Channel II
1 kW
t
tr
+5V
Oscilloscope
RL ≥ 1 M W
CL ≤ 20 pF
tp
tion
td
tr
ton (= td + tr)
tf
toff
pulse duradelay time
rise time
turn-on time
ts
tf
toff (= ts + tf)
storage time
fall time
turn-off time
95 10843
Figure 2. Test circuit, saturated operation
Rev. A3, 11–Jan–99
Figure 3. Switching times
129
CNY65Exi
Vishay Telefunken
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
1000
160
ICEO– Collector Dark Current,
with open Base ( nA )
P tot – Total Power Dissipation ( mW )
200
120
Coupled Device
80
Phototransistor
IR-Diode
40
VCE=20V
IF=0
100
10
1
0
0
25
50
75
100
Tamb – Ambient Temperature ( °C )
95 11003
0
Figure 4. Total Power Dissipation vs.
Ambient Temperature
100
IC – Collector Current ( mA )
I F – Forward Current ( mA )
100.0
10.0
1.0
0.1
VF – Forward Voltage ( V )
0.1
0.1
1
100
10
IF – Forward Current ( mA )
Figure 8. Collector Current vs. Forward Current
100
VCE=5V
IF=10mA
1.2
1.1
1.0
0.9
0.8
0.7
IF=50mA
IC – Collector Current ( mA )
CTR rel – Relative Current Transfer Ratio
1
95 11012
1.5
10mA
10
5mA
2mA
1
1mA
0.6
0.5
–30 –20 –10 0 10 20 30 40 50 60 70 80
96 11911
Tamb – Ambient Temperature ( °C
)
Figure 6. Relative Current Transfer Ratio vs.
Ambient Temperature
130
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Figure 5. Forward Current vs. Forward Voltage
1.3
VCE=5V
0.01
0
1.4
Tamb – Ambient Temperature ( °C
)
Figure 7. Collector Dark Current vs.
Ambient Temperature
1000.0
96 11862
10 20 30 40 50 60 70 80 90 100
96 12000
0.1
0.1
95 11013
1
10
100
VCE – Collector Emitter Voltage ( V )
Figure 9. Collector Current vs. Collector Emitter Voltage
Rev. A3, 11–Jan–99
CNY65Exi
VCEsat – Collector Emitter Saturation Voltage ( V )
Vishay Telefunken
t on / t off – Turn on / Turn off Time ( m s )
1.0
0.9
0.8
0.7
CTR=50
%
0.6
0.5
0.4
0.3
0.2
20%
0.1
10%
0
1
toff
40
30
ton
20
Saturated Operation
VS=5V
RL=1kW
10
0
10
100
IC – Collector Current ( mA )
96 11912
0
5
VCE=5V
100
10
20
15
Figure 12. Turn on / off Time vs. Forward Current
t on / t off – Turn on / Turn off Time ( m s )
1000
10
IF – Forward Current ( mA )
95 11017
Figure 10. Collector Emitter Saturation Voltage vs.
Collector Current
CTR – Current Transfer Ratio ( % )
50
1
20
Non Saturated
Operation
VS=5V
RL=100W
ton
15
toff
10
5
0
0.1
1
100
10
IF – Forward Current ( mA )
95 11015
0
95 11016
Figure 11. Current Transfer Ratio vs. Forward Current
2
4
6
8
10
IC – Collector Current ( mA )
Figure 13. Turn on / off Time vs. Collector Current
Type
CNY65 EXI
Date
Code
(YM)
Intrinsic
Safety
Logo
918 J TK19 EEx
EX – 81 / 2158U
Coupling
System
Indicator
Company
Logo
Production
Location
15088
PTB
Certificate
Number
Figure 14. Marking example
Rev. A3, 11–Jan–99
131
CNY65Exi
Vishay Telefunken
Dimensions of CNY65Exi in mm
weight: ca. 1.40 g
creepage distance:
air path: 14 mm
y
y 14 mm
after mounting on PC board
14763
132
Rev. A3, 11–Jan–99