CNY65Exi Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and output for highest safety requirements of > 3 mm. Applications Galvanically separated circuits, suitable for intrinsic safety circuits Electrical apparatus used in a potentially explosive atmosphere: EN 50014-1977/VDE 0171 Part 1/5.78 General instructions EN 50020-1977/VDE 0171 Part 7/5.78 Intrinsic safety ‘i’ section: 5.5, 5.5.4, 5.7 95 10536 Features D Suitable for intrinsic safety circuits according to A (+) C C (–) E test certificate No. Ex-81/2158 of PTB D Isolation material according to D Low temperature coefficient of CTR D Creepage current resistance of isolation material according to VDE 0303/DIN 53480: KC ≥ 475 95 10850 UL94 – VO – flammability class D Isolation test voltage 11.6 kV D Test class 25/100/21 DIN 40045 D Very low coupling capacity of typical 0.3 pF therefore high noise voltage resistant D Current Transfer Ratio (CTR) = 50 to 300% D Coupling System J Order Instruction Ordering Code CNY65Exi 126 CTR Ranking 50 to 300% Remarks Exi = Intrinsic safety Rev. A3, 11–Jan–99 CNY65Exi Vishay Telefunken Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward Current Forward surge current Power dissipation Junction temperature Test Conditions tp ≤ 10 ms Tamb ≤ 25°C Symbol VR IF IFSM PV Tj Value 5 75 1.5 120 100 Unit V mA A mW °C Symbol VCEO VECO IC ICM PV Tj Value 32 7 50 100 130 100 Unit V V mA mA mW °C Symbol VIO Ptot Tamb Tstg Tsd Value 11.6 250 –55 to +85 –55 to +100 260 Unit kV mW °C °C °C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter DC isolation test voltage Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Rev. A3, 11–Jan–99 Test Conditions t = 1 min Tamb ≤ 25°C 2 mm from case, t ≤ 10 s 127 CNY65Exi Vishay Telefunken Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Test Conditions IF = 50 mA Symbol VF Min. Typ. 1.25 Max. 1.6 Unit V Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, If = 0, E = 0 Symbol VCEO VECO ICEO Min. 32 7 Typ. Max. Unit V V nA Test Conditions t = 1 min VIO = 1 kV, 40% relative humidity IF = 10 mA, IC = 1 mA Symbol VIO1) RIO1) Min. 11.6 Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current 200 Coupler Parameter DC isolation test voltage Isolation resistance Collector saturation voltage Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 W Coupling capacitance f = 1 MHz 1) Related to standard climate 23/50 DIN 50014 Typ. 0.3 110 Ck Unit kV W 1012 VCEsat fc Max. V kHz 0.3 pF Current Transfer Ratio (CTR) Parameter IC/IF 128 Test Conditions VCE = 5 V, IF = 10 mA Type CNY65Exi Symbol CTR Min. 0.5 Typ. 1 Max. 3 Unit Rev. A3, 11–Jan–99 CNY65Exi Vishay Telefunken Switching Characteristics Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Symbol td tr tf ts ton toff ton toff VS = 5 V, IF = 10 mA, RL = 1 kW (see figure 2) Typ. 2.6 2.4 2.4 0.3 5.0 3.0 25.0 42.5 Unit ms ms ms ms ms ms ms ms +5V IF IF 0 Test Conditions VS = 5 V, IC = 5 mA, RL = 100 W (see figure 1) IC = 5 mA; Adjusted trough input amplitude RG = 50 W tp 0.01 T + 96 11698 IF tp = 50 ms 0 Channel I 50 W 100 W Channel II RL ≥ 1 M W CL ≤ 20 pF 95 10900 t tp Oscilloscope IC 100% 90% Figure 1. Test circuit, non-saturated operation 10% 0 IF 0 IF = 10 mA td IC RG = 50 W tp 0.01 T + ts ton tp = 50 ms Channel I 50 W Channel II 1 kW t tr +5V Oscilloscope RL ≥ 1 M W CL ≤ 20 pF tp tion td tr ton (= td + tr) tf toff pulse duradelay time rise time turn-on time ts tf toff (= ts + tf) storage time fall time turn-off time 95 10843 Figure 2. Test circuit, saturated operation Rev. A3, 11–Jan–99 Figure 3. Switching times 129 CNY65Exi Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 1000 160 ICEO– Collector Dark Current, with open Base ( nA ) P tot – Total Power Dissipation ( mW ) 200 120 Coupled Device 80 Phototransistor IR-Diode 40 VCE=20V IF=0 100 10 1 0 0 25 50 75 100 Tamb – Ambient Temperature ( °C ) 95 11003 0 Figure 4. Total Power Dissipation vs. Ambient Temperature 100 IC – Collector Current ( mA ) I F – Forward Current ( mA ) 100.0 10.0 1.0 0.1 VF – Forward Voltage ( V ) 0.1 0.1 1 100 10 IF – Forward Current ( mA ) Figure 8. Collector Current vs. Forward Current 100 VCE=5V IF=10mA 1.2 1.1 1.0 0.9 0.8 0.7 IF=50mA IC – Collector Current ( mA ) CTR rel – Relative Current Transfer Ratio 1 95 11012 1.5 10mA 10 5mA 2mA 1 1mA 0.6 0.5 –30 –20 –10 0 10 20 30 40 50 60 70 80 96 11911 Tamb – Ambient Temperature ( °C ) Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature 130 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Figure 5. Forward Current vs. Forward Voltage 1.3 VCE=5V 0.01 0 1.4 Tamb – Ambient Temperature ( °C ) Figure 7. Collector Dark Current vs. Ambient Temperature 1000.0 96 11862 10 20 30 40 50 60 70 80 90 100 96 12000 0.1 0.1 95 11013 1 10 100 VCE – Collector Emitter Voltage ( V ) Figure 9. Collector Current vs. Collector Emitter Voltage Rev. A3, 11–Jan–99 CNY65Exi VCEsat – Collector Emitter Saturation Voltage ( V ) Vishay Telefunken t on / t off – Turn on / Turn off Time ( m s ) 1.0 0.9 0.8 0.7 CTR=50 % 0.6 0.5 0.4 0.3 0.2 20% 0.1 10% 0 1 toff 40 30 ton 20 Saturated Operation VS=5V RL=1kW 10 0 10 100 IC – Collector Current ( mA ) 96 11912 0 5 VCE=5V 100 10 20 15 Figure 12. Turn on / off Time vs. Forward Current t on / t off – Turn on / Turn off Time ( m s ) 1000 10 IF – Forward Current ( mA ) 95 11017 Figure 10. Collector Emitter Saturation Voltage vs. Collector Current CTR – Current Transfer Ratio ( % ) 50 1 20 Non Saturated Operation VS=5V RL=100W ton 15 toff 10 5 0 0.1 1 100 10 IF – Forward Current ( mA ) 95 11015 0 95 11016 Figure 11. Current Transfer Ratio vs. Forward Current 2 4 6 8 10 IC – Collector Current ( mA ) Figure 13. Turn on / off Time vs. Collector Current Type CNY65 EXI Date Code (YM) Intrinsic Safety Logo 918 J TK19 EEx EX – 81 / 2158U Coupling System Indicator Company Logo Production Location 15088 PTB Certificate Number Figure 14. Marking example Rev. A3, 11–Jan–99 131 CNY65Exi Vishay Telefunken Dimensions of CNY65Exi in mm weight: ca. 1.40 g creepage distance: air path: 14 mm y y 14 mm after mounting on PC board 14763 132 Rev. A3, 11–Jan–99