CNY64, CNY65, CNY66 Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage FEATURES • Rated recurring peak voltage (repetitive) VIORM = 1450 Vpeak Top View A C CNY64 • Thickness through insulation 3 mm • Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI 200 CNY65 C • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC E V D E APPLICATIONS Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 17187-5 CNY66 • for appl. class I - IV at mains voltage 300 V 17187-4 • for appl. class I - IV at mains voltage 600 V DESCRIPTION The CNY64, CNY65, and CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. The single components are mounted opposite one another, providing a distance between input and output for highest safety requirements of > 3 mm. VDE STANDARDS These couplers perform safety functions according to the following equipment standards: • DIN EN 60747-5-2 (VDE 0884) Optocoupler for electrical safety requirements • IEC 60950/EN 60950 Office machines • VDE 0804 Telecommunication apparatus and data processing • IEC60065 Safety for mains-operated electronic and related household apparatus • VDE 0700/IEC 60335 Household equipment • VDE 0160 Electronic equipment for electrical power installation • VDE 0750/IEC60601 Medical equipment • for appl. class I - III at mains voltage 1000 V according to DIN EN 60747-5-2 (VDE 0884), suitable for: - Switch-mode power supplies - Line receiver - Computer peripheral interface - Microprocessor system interface AGENCY APPROVALS • UL1577, file no. E76222 system code H, J, and K • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 (pending), available with option 1 • VDE related features: - rated impulse voltage (transient overvoltage), VIOTM = 12 kV peak - isolation test voltage (partial discharge test voltage), Vpd = 2.8 kV peak ORDERING INFORMATION DIP, 400 mil C N Y 6 PART NUMBER # x PACKAGE OPTION CTR BIN AGENCY CERTIFIED/PACKAGE DIP, 600 mil 10.16 mm 15.24 mm DIP, 700 mil 17.8 mm CTR (%) UL, VDE 50 to 300 63 to 125 100 to 200 DIP-4 HV, 400 mil, high isolation distance CNY64 CNY64A CNY64B DIP-4 HV, 600 mil, high isolation distance CNY65 CNY65A CNY65B DIP-4 HV, 700 mil, high isolation distance CNY66 - CNY66B Document Number: 83540 Rev. 2.1, 24-Feb-11 For technical questions, contact: [email protected] www.vishay.com 1 CNY64, CNY65, CNY66 Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 5 V Forward current IF 75 mA IFSM 1.5 A Pdiss 120 mW Tj 100 °C Collector emitter voltage VCEO 32 V Emitter collector voltage VECO 7 V Forward surge current tp 10 μs Power dissipation Junction temperature OUTPUT Collector current Collector peak current IC 50 mA ICM 100 mA Pdiss 130 mW Tj 100 °C tp/T = 0.5, tp 10 ms Power dissipation Junction temperature COUPLER AC isolation test voltage CNY64 t = 1 min VISO 8200 VRMS DC isolation test voltage CNY65 t=1s VISO 13.9 kV DC isolation test voltage CNY66 t=1s VISO 13.9 kV Total power dissipation Ptot 250 mW Ambient temperature range Tamb - 55 to + 85 °C Storage temperature range Tstg - 55 to + 100 °C Tsld 260 °C Soldering temperature 2 mm from case, 10 s Note • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 50 mA VR = 0, f = 1 MHz MIN. TYP. MAX. VF 1.25 1.6 Cj 50 UNIT INPUT Forward voltage Junction capacitance V pF OUTPUT Collector emitter voltage IC = 1 mA VCEO 32 Emitter collector voltage IE = 100 μA VECO 7 VCE = 20 V, IF = 0 A ICEO 200 nA Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 fc 110 kHz f = 1 MHz Ck 0.3 pF Collector emitter leakage current V V COUPLER Coupling capacitance Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 83540 Rev. 2.1, 24-Feb-11 CNY64, CNY65, CNY66 Optocoupler, Phototransistor Output, Vishay Semiconductors Very High Isolation Voltage CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION IC/IF VCE = 5 V, IF = 10 mA PART SYMBOL MIN. CNY64, CNY65, CNY66 CTR CNY64A CNY65A TYP. MAX. UNIT 50 300 % CTR 63 125 % CTR 63 125 % CNY64B CTR 100 200 % CNY65B CTR 100 200 % CNY66B CTR 100 200 % SAFETY AND INSULATION RATED PARAMETERS TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test PARAMETER 100 %, ttest = 1 s Vpd 2.8 kV Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see fig. 2) Vpd 2.2 kV Insulation resistance TYP. MAX. UNIT VIO = 500 V, Tamb = 25 °C RIO 1012 VIO = 500 V, Tamb = 100 °C RIO 1011 VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 Forward current Power dissipation Rated impulse voltage Safety temperature ISI 120 mA PSO 250 mW VIOTM 12 kV TSI 150 °C Note • According to DIN EN 60747-5-2 (see fig. 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. VIOTM 250 225 t1, t2 t3 , t4 ttest tstres PSO (mW) 200 175 150 VPd 125 VIOWM VIORM 100 75 = 1 to 10 s =1s = 10 s = 12 s ISI(mA) 50 25 0 0 0 25 50 75 100 125 150 175 200 TSI - Safety Temperature(°C) Fig. 1 - Safety Derating Diagram Document Number: 83540 Rev. 2.1, 24-Feb-11 13930 t3 ttest t4 t1 tTr = 60 s t2 t stres t Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5 For technical questions, contact: [email protected] www.vishay.com 3 CNY64, CNY65, CNY66 Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL Delay time PARAMETER VS = 5 V, IC = 5 mA, RL = 100 , (see fig. 3) td MIN. TYP. 2.6 MAX. UNIT μs Rise time VS = 5 V, IC = 5 mA, RL = 100 , (see fig. 3) tr 2.4 μs Fall time VS = 5 V, IC = 5 mA, RL = 100 , (see fig. 3) tf 2.7 μs Storage time VS = 5 V, IC = 5 mA, RL = 100 , (see fig. 3) ts 0.3 μs Turn-on time VS = 5 V, IC = 5 mA, RL = 100 , (see fig. 3) ton 5 μs Turn-off time VS = 5 V, IC = 5 mA, RL = 100 , (see fig. 3) toff 3 μs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 k, (see fig. 4) ton 25 μs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 k, (see fig. 4) toff 42.5 μs IF IF 0 0 +5V IF IC = 5 mA; adjusted through input amplitude RG = 50 tp = 0.01 T tp = 50 µs 50 100 Oscilloscope RL 1 M CL 20 pF 95 10900 Fig. 3 - Test Circuit, Non-Saturated Operation IF t 100 % 90 % 10 % 0 Channel I Channel II tp IC tr td ts t on tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 5 - Switching Times +5V I F = 10 mA 0 IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 Fig. 4 - Test Circuit, Saturated Operation www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 83540 Rev. 2.1, 24-Feb-11 CNY64, CNY65, CNY66 Optocoupler, Phototransistor Output, Vishay Semiconductors Very High Isolation Voltage 280 1000 Coupled device ICEO - Collector Dark Current, with open Base (nA) Ptot - Total Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 240 200 160 Phototransistor 120 IR-diode 80 40 0 25 50 75 10 100 Tamb - Ambient Temperature (°C) 21995 0 10 20 30 40 50 60 70 80 90 100 96 12000 Fig. 6 - Total Power Dissipation vs. Ambient Temperature Tamb - Ambient Temperature (°C) Fig. 9 - Collector Dark Current vs. Ambient Temperature 100 IC - Collector Current (mA) 1000 IF - Forward Current (mA) 100 1 0 100 10 1 0 0.4 0.8 1.2 1.6 2.0 VF - Forward Voltage (V) 96 11862 Fig. 7 - Forward Current vs. Forward Voltage 0.1 1 100 10 IF - Forward Current (mA) 100 VCE = 5 V IF = 10 mA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 96 11911 1 Fig. 10 - Collector Current vs. Forward Current IC - Collector Current (mA) 1.3 10 95 11012 1.5 1.4 VCE = 5 V 0.01 0.1 0.1 CTRrel - Relative Current Transfer Ratio VCE = 20 V IF = 0 Tamb - Ambient Temperature (°C) Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature Document Number: 83540 Rev. 2.1, 24-Feb-11 IF = 50 mA 10 mA 10 5 mA 2 mA 1 1 mA 0.1 0.1 95 11013 1 10 100 VCE - Collector Emitter Voltage (V) Fig. 11 - Collector Current vs. Collector Emitter Voltage For technical questions, contact: [email protected] www.vishay.com 5 CNY64, CNY65, CNY66 Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage ton/toff - Turn-on/Turn-off Time (µs) 1.0 VCEsat - Collector Emitter Saturation Voltage (V) 0.9 0.8 0.7 CTR = 50 % 0.6 0.5 0.4 0.3 0.2 20 % 0.1 10 % 0.0 1 10 100 IC - Collector Current (mA) 96 11912 Non-saturated operation VS = 5 V RL = 100 Ω ton 15 toff 10 5 0 0 95 11016 Fig. 12 - Collector Emitter Saturation Voltage vs. Collector Current CTR - Current Transfer Ratio (%) 20 2 4 6 8 10 IC - Collector Current (mA) Fig. 15 - Turn-on/Turn-off Time vs. Forward Current 1000 VCE = 5 V 100 10 1 0.1 1 100 10 IF - Forward Current (mA) 95 11015 ton/toff - Turn-on/Turn-off Time (µs) Fig. 13 - Current Transfer Ratio vs. Forward Current 50 toff 40 30 ton 20 Saturated operation VS = 5 V RL = 1 kΩ 10 0 0 95 11017 5 10 15 20 IF - Forward Current (mA) Fig. 14 - Turn-on/Turn-off Time vs. Collector Current www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 83540 Rev. 2.1, 24-Feb-11 CNY64, CNY65, CNY66 Optocoupler, Phototransistor Output, Vishay Semiconductors Very High Isolation Voltage PACKAGE DIMENSIONS in millimeters FOR CNY64 12.8 ± 0.1 9.1 ± 0.3 6.01 ± 0.1 7.2 ± 0.1 10.16 ± 0.2 5.08 ± 0.2 4 0. 5 0. A Coll Weight: ca. 0.73 g Creepage distance: > 9.5 mm Air path: > 9.5 mm after mounting on PC board E Cath technical drawings according to DIN specifications Drawing-No.: 6.544-5038.01-4 Issue: 2; 10.11.98 14765 Document Number: 83540 Rev. 2.1, 24-Feb-11 For technical questions, contact: [email protected] www.vishay.com 7 CNY64, CNY65, CNY66 Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage PACKAGE DIMENSIONS in millimeters FOR CNY65 17.8 ± 0.1 9.1 ± 0.3 6.1 ± 0.1 9.6 ± 0.1 15.24 ± 0.2 7.62 ± 0.2 technical drawings according to DIN specifications 4 0. 5 0. A Weight: ca. 1.40 g Creepage distance: > 14 mm Air path: > 14 mm after mounting on PC board Coll Cath E Drawing-No.: 6.544-5036.01-1 Issue: 2; 10.11.98 14763 PACKAGE DIMENSIONS in millimeters FOR CNY66 9.6 ± 0.1 9.1 ± 0.3 6.1 ± 0.1 20.4 ± 0.1 17.8 ± 0.2 7.62 ± 0.2 technical drawings according to DIN specifications 4 0. 5 0. A Coll Cath Weight: ca. 1.70 g Creepage distance: > 17 mm Air path: > 17 mm after mounting on PC board E Drawing-No.: 6.544-5037.01-4 Issue: x; 10.11.98 14764 PACKAGE MARKING CNY65A V YWW J 69 21764-73 www.vishay.com 8 For technical questions, contact: [email protected] Document Number: 83540 Rev. 2.1, 24-Feb-11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000