H11A1, H11A2, H11A3, H11A4, H11A5 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection A 1 6 B C 2 5 C NC 3 4 E FEATURES • Interfaces with common logic families • Input-output coupling capacitance < 0.5 pF • Industry standard dual-in line 6-pin package • Isolation test voltage: 5300 VRMS • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 i179004-3 DESCRIPTION APPLICATIONS The H11Ax family is an industry standard single channel phototransistor coupler. It includes the H11A1, H11A2, H11A3, H11A4, H11A5 couplers. • AC mains detection • Reed relay driving • Switch mode power supply feedback Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. • Telephone ring detection • Logic ground isolation The isolation performance is accomplished through Vishay double molding isolation manufacturing process. Compliance to DIN EN 60747-5-5 partial discharge isolation specification is available is by ordering option 1. • Logic coupling with high frequency noise rejection AGENCY APPROVALS These isolation processes and the Vishay ISO9001 quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. • UL1577, file no. E52744 system code H or J, double protection The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers. • DIN EN 60747-5-5 (VDE 0884-5), available with option 1 • CSA 93751 • BSI IEC 60950; IEC 60065 • FIMKO • CQC Note • Designing with data sheet is covered in Application Note 45. ORDERING INFORMATION H 1 1 A # - X 0 PART NUMBER 0 # PACKAGE OPTION X TAPE AND REEL DIP Option 6 7.62 mm 10.16 mm Option 7 Option 9 > 0.7 mm AGENCY CERTIFIED/PACKAGE UL, CSA, BSI, FIMKO, CQC CTR (%) > 50 > 20 > 10 > 30 H11A3 H11A4 H11A5 - - - - - - - - - - - - H11A1, H11A1-X001 H11A2 DIP-6, 400 mil, option 6 H11A1-X006 SMD-6, option 7 H11A1-X007, H11A1-X017 SMD-6, option 9 H11A1-X009, H11A1-X009T DIP-6 > 0.1 mm Note • Additional options may be possible, please contact sales office. Document Number: 83730 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.6, 16-Jun-14 H11A1, H11A2, H11A3, H11A4, H11A5 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA t ≤ 10 μs IFSM 2.5 A Pdiss 100 mW Collector emitter breakdown voltage VCEO 70 V Emitter base breakdown voltage VEBO 7 V mA Surge current Power dissipation OUTPUT Collector current IC 50 IC 100 mA Pdiss 150 mW VISO 5300 VRMS t < 1 ms Power dissipation COUPLER Isolation test voltage Creepage distance ≥7 mm Clearance distance ≥7 mm ≥ 0.4 mm Insulation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDE 0303, part 1 175 VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature range Tstg -55 to +150 °C Operating temperature range Tamb -55 to +100 °C Tj 100 °C Tsld 260 °C Isolation resistance Junction temperature Soldering temperature max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Ω Note • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL H11A1 H11A2 MIN. TYP. MAX. UNIT VF 1.1 1.5 V VF 1.1 1.5 V H11A3 VF 1.1 1.5 V H11A4 VF 1.1 1.5 V H11A5 VF 1.1 1.7 V 10 μA INPUT Forward voltage Reverse current Capacitance IF = 10 mA VR = 3 V IR VR = 0 V, f = 1 MHz CO 50 pF OUTPUT Collector emitter breakdown voltage IC = 1 mA, IF = 0 mA BVCEO 30 Emitter collector breakdown voltage IE = 100 μA, IF = 0 mA BVECO 7 V Collector base breakdown voltage IC = 10 μA, IF = 0 mA BVCBO 70 V Collector emitter leakage current VCE = 10 V, IF = 0 mA ICEO 5 VCE = 0 V CCE 6 ICE = 0.5 mA, IF = 10 mA VCEsat Emitter collector capacitance V 50 nA pF COUPLER Collector emitter, saturation voltage Capacitance (input-output) CIO 0.4 0.5 V pF Note • Minimum and maximum values were tested requirements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. Document Number: 83730 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.6, 16-Jun-14 H11A1, H11A2, H11A3, H11A4, H11A5 www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO PARAMETER TEST CONDITION IC/IF VCE = 10 V, IF = 10 mA PART SYMBOL MIN. H11A1 CTRDC 50 TYP. MAX. UNIT % H11A2 CTRDC 20 % H11A3 CTRDC 20 % H11A4 CTRDC 10 % H11A5 CTRDC 30 % SYMBOL MIN. SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION Turn-on time IC = 2 mA, RL = 100 Ω, VCE = 10 V Turn-off time TYP. MAX. UNIT ton 3 μs toff 3 μs TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.5 1.3 NCTR - Normalized CTR TA = - 55 °C 1.2 TA = 25 °C 1.1 1.0 0.9 TA = 85 °C 0.8 1 10 NCTR - Normalized CTR TA = 50 °C 0.5 NCTR(SAT) NCTR 0.1 1 1.0 TA = 25 °C 0.5 NCTR(SAT) Fig. 3 - Normalized Non-Saturated and Saturated CTR vs. LED Current Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 °C CTRCE(sat) VCE = 0.4 V 1.0 TA = 70 °C 0.5 NCTR(SAT) NCTR NCTR 0.0 i4n25_02 1 10 100 1.5 Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 °C CTRCE(sat) = 0.4 V 0 10 IF - LED Current (mA) i4n25_03 Fig. 1 - Forward Voltage vs. Forward Current 1.5 1.0 100 IF - Forward Current (mA) i4n25_01 Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 °C CTRCE(sat) VCE = 0.4 V 0.0 0.7 0.1 NCTR - Normalized CTR VF -Forward Voltage (V) 1.4 100 IF - LED Current (mA) Fig. 2 - Normalized Non-Saturated and Saturated CTR vs. LED Current 0.0 0.1 i4n25_04 1 10 100 IF - LED Current (mA) Fig. 4 - Normalized Non-Saturated and Saturated CTR vs. LED Current Document Number: 83730 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.6, 16-Jun-14 H11A1, H11A2, H11A3, H11A4, H11A5 www.vishay.com Vishay Semiconductors 1.5 Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 °C CTRCE(sat) VCE = 0.4 V NCTRcb - Normalized CTRcb NCTR - Normalized CTR 1.5 1.0 TA = 85 °C 0.5 NCTR(SAT) NCTR 1 10 100 IF - LED Current (mA) i4n25_05 25 °C 50 °C 70 °C 1 10 100 IF - LED Current (mA) Fig. 8 - Normalized CTRcb vs. LED Current and Temperature 35 10 30 25 50 °C 20 70 °C 15 85 °C 25 °C 10 5 Normalized Photocurrent ICE - Collector Current (mA) 0.5 i4n25_08 Fig. 5 - Normalized Non-Saturated and Saturated CTR vs. LED Current 0 10 20 30 40 50 60 IF - LED Current (mA) i4n25_06 Normalized to: IF = 10 mA, TA = 25 °C 1 0.1 Nib, TA = - 20 °C Nib, TA = 20 °C Nib, TA = 50 °C Nib, TA = 70 °C 0.01 0.1 0 i4n25_09 Fig. 6 - Collector Emitter Current vs. Temperature and LED Current 1 10 100 IF - LED Current (mA) Fig. 9 - Normalized Photocurrent vs. IF and Temperature 105 1.2 70 °C 104 NhFE - Normalized hFE ICEO - Collector Emitter (nA) 1.0 0.0 0.1 0.0 0.1 Normalized to: VCB = 9.3 V, IF = 10 mA, TA = 25 °C 103 102 VCE = 10 V 101 Typical 100 10- 1 10- 2 -20 i4n25_07 1.0 25 °C - 20 °C 0.8 Normalized to: IB = 20 µA, VCE = 10 V, TA = 25 °C 0.6 0.4 0 20 40 60 80 100 Tamb- Ambient Temperature (°C) Fig. 7 - Collector Emitter Leakage Current vs. Temperature 1 i4n25_10 10 100 1000 Ib - Base Current (µA) Fig. 10 - Normalized Non-Saturated hFE vs. Base Current and Temperature Document Number: 83730 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.6, 16-Jun-14 H11A1, H11A2, H11A3, H11A4, H11A5 NhFE(sat) - Normalized Saturated hFE www.vishay.com Vishay Semiconductors 1.5 70 °C 50 °C IF Normalized to: VCE = 10 V, Ib = 20 µA TA = 25 °C 1.0 25 °C tD - 20 °C tPLH 0.5 VCE = 0.4 V VTH = 1.5 V tPHL 0.0 1 10 i4n25_11 100 i4n25_13 Ib - Base Current (µA) 1000 VCC = 5 V 2.0 1.5 10 tPLH 0.1 1 10 tPHL - Propagation Delay (µs) tPHL 100 i4n25_12 Fig. 13 - Switching Timing 2.5 IF = 10 mA, TA = 25 °C VCC = 5.0 V, Vth = 1.5 V 1 tF tS 1000 Fig. 11 - Normalized HFE vs. Base Current and Temperature tPLH- Propagation Delay (µs) tR VO 1.0 100 f = 10 kHz DF = 50 % RL VO IF = 10 mA i4n25_14 RL - Collector Load Resistor (kΩ) Fig. 12 - Propagation Delay vs. Collector Load Resistor Fig. 14 - Switching Schematic Document Number: 83730 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.6, 16-Jun-14 H11A1, H11A2, H11A3, H11A4, H11A5 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 3.50 ± 0.30 DIP-6 9.00 max. 8.60 ± 0.10 0.80 min. 3.10 ± 0.50 0.90 min. 7.62 typ. 6.40 ± 0.30 0.85 ± 0.10 0.50 ± 0.10 3° to 9° 0.25 ± 0.10 1.27 ± 0.10 2.54 typ. 6 5 4 1 2 3 Pin 1 I.D. 3.50 ± 0.30 Option 6 9.00 max. 8.60 ± 0.10 7.62 typ. 6.40 ± 0.30 3.40 ± 0.50 0.10 min. 0.90 min. 0.85 ± 0.10 0.50 ± 0.10 1.27 ± 0.10 2.54 typ. 6 5 4 1 2 3 0.25 ± 0.10 10.16 typ. Pin 1 I.D. Document Number: 83730 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.6, 16-Jun-14 H11A1, H11A2, H11A3, H11A4, H11A5 www.vishay.com Vishay Semiconductors Option 7 10.30 max. 7.62 typ. 9.00 max. 8.60 ± 0.10 6.40 ± 0.30 1.27 ± 0.10 0.25 ± 0.10 4.30 ± 0.30 0.70 min. 3.50 ± 0.30 0.90 min. 0.50 min. 2.54 typ. 5 4 0.76 6 Leads coplanarity 0.1 max. 8.00 min. .25 2.54 R0 1.78 Pin 1 I.D. 1.52 1 2 8.00 min. 3 11.05 Option 9 10.05 max. 7.62 typ. 6.40 ± 0.30 9.00 max. 8.60 ± 0.10 3.50 ± 0.30 0.20 ± 0.10 0.90 min. 0.50 min. 1.27 ± 0.10 Leads coplanarity 0.1 max. 8.00 min. 2.54 typ. 5 4 Pin 1 I.D. .25 R0 1.78 2.54 0.76 6 1.52 1 2 3 8.00 min. 11.05 Document Number: 83730 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.6, 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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