VISHAY MCT272

VISHAY
MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection
Features
•
•
•
•
Interfaces with common logic families
Input-output coupling capacitance < 0.5 pF
Industry Standard Dual-in line 6-pin package
5300 VRMS isolation test voltage
Agency Approvals
• UL - File No. E52744 System Code H or J
• DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• CSA 93751
• BSI IEC60950 IEC60965
Applications
AC mains detection
Reed relay driving
Switch mode power supply feedback
Telephone ring detection
Logic ground isolation
Logic coupling with high frequency noise rejection
For additional design information see Application
Note 45
A
1
6 B
C
2
5 C
NC
3
4 E
i179004
These isolation processes and the Vishay ISO9001
quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler.
The devices are available also in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube
shipping containers.
Order Information
Part
Remarks
MCT270
CTR > 50 %, DIP-6
MCT271
CTR 45 - 90 %, DIP-6
Description
MCT272
CTR 75 - 150 %, DIP-6
The MCT27x family is an Industry Standard Single
Channel Phototransistor Couplers. It includes the
MCT270/ 271/ 272/ 273/ 274/ 275/ 276/ 277 couplers.
Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL)
listed to comply with a 5300 VRMS isolation test voltage.
This isolation performance is accomplished through
Vishay double molding isolation manufacturing process. Compliance to DIN EN 60747-5-2(VDE0884)/
DIN EN 60747-5-5 pending partial discharge isolation
specification is available by ordering option 1.
MCT273
CTR 125 - 250 %, DIP-6
MCT274
CTR 225 - 400 %, DIP-6
MCT275
CTR 70 - 210 %, DIP-6
MCT276
CTR 15 - 60 %, DIP-6
MCT277
CTR > 100 %, DIP-6
Document Number 83724
Rev. 1.4, 19-Apr-04
MCT270-X009
CTR > 50 %, SMD-6 (option 9)
MCT277-X009
CTR > 100 %, SMD-6 (option 9)
For additional information on the available options refer to
Option Information.
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MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Symbol
Value
Reverse voltage
Parameter
Test condition
VR
6.0
V
Forward current
IF
60
mA
IFSM
2.5
A
Pdiss
100
mW
Symbol
Value
Unit
VCEO
70
V
t < 10 µs
Surge current
Power dissipation
Unit
Output
Parameter
Test condition
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector current
t < 1.0 ms
7.0
V
IC
50
mA
IC
100
mA
Pdiss
150
mW
Symbol
Value
Unit
VISO
5300
VRMS
Creepage
≥ 7.0
mm
Clearance
≥ 7.0
mm
Isolation thickness between
emitter and detector
≥ 0.4
mm
Comparative tracking index per
DIN IEC 112/VDE0303,part 1
175
Power dissipation
Coupler
Parameter
Test condition
Isolation test voltage
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
11
Ω
10
Storage temperature
Tamb
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Tj
100
°C
Tsld
260
°C
Junction temperature
Soldering temperature
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2
max. 10 s dip soldering:
distance to seating plane
≥ 1.5mm
Document Number 83724
Rev. 1.4, 19-Apr-04
MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7
VISHAY
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Test condition
IF = 20 mA
Symbol
Min
Typ.
VF
Reverse current
VR = 3.0 V
IR
Capacitance
VR = 0, f = 1.0 MHz
CO
Max
Unit
1.5
V
10
µA
25
pF
Output
Symbol
Min
Collector-emitter breakdown
voltage
Parameter
IC = 10 µA, IF = 0 mA
Test condition
BVCEO
30
Typ.
Max
Unit
V
Emitter-collector breakdown
voltage
IE = 10 µA, IF = 0 mA
BVECO
7.0
V
Collector-base breakdown
voltage
IC = 10 µA, IF = 0 mA
BVCBO
70
V
Collector-emitter leakage
current
VCE = 10 V, IF = 0 mA
ICEO
50
nA
Max
Unit
Coupler
Parameter
Resistance, input to output
Test condition
VIO = 500 VDC
Capacitance (input-output)
Collector-emitter saturation
voltage
Symbol
Min
Typ.
RIO
10
0.5
CIO
ICE = 2.0 mA, IF = 16 mA
Ω
12
pF
VCEsat
0.4
V
Current Transfer Ratio
Parameter
DC Current Transfer Ratio
Current Transfer Ratio
(collector-emitter)
Document Number 83724
Rev. 1.4, 19-Apr-04
Test condition
VCE = 10 V, IF = 10 mA
VCE = 0.4 V, IF = 16 mA
Part
Symbol
Min
MCT270
CTRDC
50
Typ.
Max
Unit
MCT271
CTRDC
45
90
%
MCT272
CTRDC
75
150
%
MCT273
CTRDC
125
250
%
MCT274
CTRDC
225
400
%
%
MCT275
CTRDC
70
210
%
MCT276
CTRDC
15
60
%
MCT277
CTRDC
100
%
MCT271
CTRCE
12.5
%
MCT272
CTRCE
12.5
%
MCT273
CTRCE
12.5
%
MCT274
CTRCE
12.5
%
MCT275
CTRCE
12.5
%
MCT276
CTRCE
12.5
%
MCT277
CTRCE
40
%
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MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7
VISHAY
Vishay Semiconductors
Switching Characteristics
Parameter
Switching time
Test condition
IC = 2.0 mA, RL = 100 Ω, VCE = 5.0 V
Part
Symbol
MCT270
ton, toff
Min
Typ.
Max
10
Unit
µs
MCT271
ton, toff
7.0
µs
MCT272
ton, toff
10
µs
MCT273
ton, toff
20
µs
MCT274
ton, toff
25
µs
MCT275
ton, toff
15
µs
MCT277
ton, toff
15
µs
MCT276
ton, toff
3.5
µs
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.4
VF - Forward Voltage - V
1.3
NCTR - Normalized CTR
1.5
TA = –55°C
1.2
TA = 25°C
1.1
1.0
0.9
TA = 85°C
0.8
.1
1
10
IF - Forward Current - mA
TA=50°C
0.5
NCTR(SAT)
NCTR
.1
100
i4n25_01
1
10
IF- LED Current - mA
100
i4n25_03
Fig. 1 Forward Voltage vs. Forward Current
Fig. 3 Normalized Non-saturated and Saturated CTR vs. LED
Current
1.5
1.5
Normalized to:
Vce=10 V, IF=10 mA, TA=25°C
CTRce(sat) Vce=0.4 V
NCTR - Normalized CTR
NCTR - Normlized CTR
1.0
0.0
0.7
1.0
TA=25°C
0.5
NCTR(SAT)
NCTR
Normalized to:
Vce=10 V, IF=10 mA, TA=25°C
CTRce(sat) Vce=0.4 V
1.0
TA=70°C
0.5
NCTR(SAT)
NCTR
0.0
0.0
.1
0
1
10
IF - LED Current - mA
100
i4n25_02
Fig. 2 Normalized Non-Saturated and Saturated CTR vs. LED
Current
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4
Normalized to:
Vce=10 V, IF=10 mA, TA=25°C
CTRce(sat) Vce=0.4 V
1
10
IF - LED Current - mA
100
i4n25_04
Fig. 4 Normalized Non-saturated and saturated CTR vs. LED
Current
Document Number 83724
Rev. 1.4, 19-Apr-04
MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7
VISHAY
Vishay Semiconductors
1.5
Normalized to:
Vce=10 V, IF=10 mA, TA=25°C
CTRce(sat) Vce = 0.4 V
Normalized to:
Vcb=9.3 V, IF=10 mA, TA=25°C
NCTRcb - Normalized CTRcb
NCTR - Normalized CTR
1.5
1.0
TA=85°C
0.5
NCTR(SAT)
NCTR
1.0
0.5
25°C
50°C
70°C
0.0
.1
0.0
.1
1
10
IF - LED Current - mA
100
i4n25_05
10
100
i4n25_08
Fig. 5 Normalized Non-saturated and saturated CTR vs. LED
Current
Fig. 8 Normalized CTRcb vs. LED Current and Temp.
35
10
Normalized to:
IF=10 mA, TA=25°C
25
Normalized Photocurrent
30
Ice - Collector Current - mA
1
IF - LED Current - mA
50°C
20
70°C
15
25°C
85°C
10
5
1
0.1
Nib, TA=–20°C
Nib, TA= 25°C
Nib, TA= 50°C
Nib, TA= 70°C
0
0
10
20
30
40
50
60
0.01
.1
IF - LED Current - mA
i4n25_06
Fig. 6 Collector-Emitter Current vs. Temperature and LED
Current
10
10
10
10
10
10
100
Fig. 9 Normalized Photocurrent vs. IF and Temp.
5
1.2
70°C
4
NHFE - Normalized HFE
Iceo - Collector-Emitter - nA
10
1
IF - LED Current - mA
i4n25_09
3
2
Vce = 10 V
1
Typical
0
10 –1
10 –2
–20
0
20
40
60
80
Fig. 7 Collector-Emitter Leakage Current vs.Temp.
Document Number 83724
Rev. 1.4, 19-Apr-04
25°C
–20°C
0.8
Normalized to:
Ib=20 µA, Vce=10 V, TA=25°C
0.6
0.4
100
TA - Ambient Temperature - °C
i4n25_07
1.0
1
10
100
Ib - Base Current - µA
1000
i4n25_10
Fig. 10 Normalized Non-saturated HFE vs. Base Current and
Temperature
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MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7
VISHAY
NHFE(sat) - Normalized Saturated HFE
Vishay Semiconductors
1.5
Normalized to:
Vce=10 V, Ib=20 µA
T A =25°C
50°C
70°C
VCC = 5.0 V
1.0
F=10 KHz,
DF=50%
25°C
RL
VO
–20°C
0.5
IF=1 0 mA
Vce=0.4 V
0.0
1
10
100
1000
Ib - Base Current - µA
i4n25_11
i4n25_14
Fig. 11 Normalized HFE vs. Base Current and Temp.
2.5
IF =10 mA,TA=25°C
VCC =5.0 V, Vth=1.5 V
100
tPHL
2.0
10
1.5
tPLH
1
.1
tPHL - Propagation Delay - µs
tPLH - Propagation Delay - µs
1000
Fig. 14 Switching Schematic
1.0
1
10
100
RL - Collector Load Resistor - kΩ
i4n25_12
Fig. 12 Propagation Delay vs. Collector Load Resistor
IF
VO
tD
tR
tPLH
VTH=1.5 V
tPHL
tS
tF
i4n25_13
Fig. 13 Switching Timing
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Document Number 83724
Rev. 1.4, 19-Apr-04
MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7
VISHAY
Vishay Semiconductors
Package Dimensions in Inches (mm)
pin one ID
3
2
1
4
5
6
.248 (6.30)
.256 (6.50)
ISO Method A
.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.039
(1.00)
Min.
.130 (3.30)
.150 (3.81)
18°
4°
typ.
.031 (0.80) min.
3°–9°
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.100 (2.54) typ.
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
i178004
Package Dimensions in Inches (mm)
SMD
.343 (8.71)
.335 (8.51)
Pin one I.D.
.030 (.76)
.256 (6.50)
.248 (6.30)
.100 (2.54)
R .010 (.25)
.070 (1.78)
.315 (8.00) min
.435 (11.05)
.060 (1.52)
.050 (1.27) typ.
.395 (10.03)
.375 (9.63)
.300 (7.62)
typ.
ISO Method A
.039
(0.99)
min.
.052 (1.33)
.048 (1.22)
.150 (3.81)
.130 (3.30) .0098 (.25)
.0040 (.10)
3° to 7°
18°
4°
.100 (2.54)
i178002
Document Number 83724
Rev. 1.4, 19-Apr-04
.040 (1.016)
.020 (0.508)
.315 (8.00)
min.
.012 (0.31)
.008 (0.20)
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MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7
VISHAY
Vishay Semiconductors
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.0040 (.102)
.0098 (.249)
.012 (.30) typ.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
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8
15° max.
18449
Document Number 83724
Rev. 1.4, 19-Apr-04
MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83724
Rev. 1.4, 19-Apr-04
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9