4N35/ 4N36/ 4N37/ 4N38 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • • • • • • Isolation Test Voltage 5300 VRMS Interfaces with common logic families Input-output coupling capacitance < 0.5 pF Industry Standard Dual-in line 6-pin package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A 1 6 B C 2 5 C NC 3 4 E e3 i179004 Agency Approvals Pb Pb-free • Underwriters Laboratory File #E52744 • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 Applications AC mains detection Reed relay driving Switch mode power supply feedback Telephone ring detection Logic ground isolation Logic coupling with high frequency noise rejection These isolation processes and the Vishay ISO9001 quality program results in the highest isolation performance available for a commecial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers. Note: Designing with data sheet is cover in Application Note 45 Order Information Part Description This data sheet presents five families of Vishay Industry Standard Single Channel Phototransistor Couplers.These families include the 4N35/ 4N36/ 4N37/ 4N38 couplers. Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5300 VRMS isolation test voltage. This isolation performance is accomplished through Vishay double molding isolation manufacturing process. Comliance to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending partial discharge isolation specification is available for these families by ordering option 1. Document Number 83717 Rev. 1.5, 27-Jan-05 Remarks 4N35 CTR > 100 %, DIP-6 4N36 CTR > 100 %, DIP-6 4N37 CTR > 100 %, DIP-6 4N38 CTR > 20 %, DIP-6 4N35-X006 CTR > 100 %, DIP-6 400 mil (option 6) 4N35-X007 CTR > 100 %, SMD-6 (option 7) 4N35-X009 CTR > 100 %, SMD-6 (option 9) 4N36-X007 CTR > 100 %, SMD-6 (option 7) 4N36-X009 CTR > 100 %, SMD-6 (option 9) 4N37-X006 CTR > 100 %, DIP-6 400 mil (option 6) 4N37-X009 CTR > 100 %, SMD-6 (option 9) For additional information on the available options refer to Option Information. www.vishay.com 1 4N35/ 4N36/ 4N37/ 4N38 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter VR 6.0 V Forward current IF 60 mA IFSM 2.5 A Pdiss 100 mW Surge current Test condition ≤ 10 µs Power dissipation Unit Output Symbol Value Unit Collector-emitter breakdown voltage Parameter Test condition VCEO 70 V Emitter-base breakdown voltage VEBO 7.0 V IC 50 mA IC 100 mA Pdiss 150 mW Symbol Value Unit VISO 5300 VRMS Collector current (t ≤ 1.0 ms) Power dissipation Coupler Parameter Test condition Isolation test voltage Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Isolation thickness between emitter and detector ≥ 0.4 mm Comparative tracking index per DIN IEC 112/VDE0303,part 1 175 VIO = 500 V, Tamb = 25 °C RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Tj 100 °C Tsld 260 °C Isolation resistance Junction temperature Soldering temperature www.vishay.com 2 max. 10 s dip soldering: distance to seating plane ≥ 1.5 mm Document Number 83717 Rev. 1.5, 27-Jan-05 4N35/ 4N36/ 4N37/ 4N38 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Min Typ. Max Unit 1.3 1.5 V 1.3 1.7 V 0.1 10 µA voltage1) IF = 10 mA VF IF = 10 mA, Tamb = - 55 °C VF Reverse current1) VR = 6.0 V IR Capacitance VR = 0, f = 1.0 MHz CO 25 Forward 1) 0.9 pF Indicates JEDEC registered value Output Parameter Collector-emitter breakdown Test condition IC = 1.0 mA Part Symbol Min 4N35 BVCEO 30 Typ. Max Unit V 4N36 BVCEO 30 V 4N37 BVCEO 30 V 4N38 BVCEO 80 V BVECO 7.0 V 4N35 BVCBO 70 V 4N36 BVCBO 70 V 4N37 BVCBO 70 V 4N38 BVCBO 80 4N35 ICEO 5.0 50 nA 4N36 ICEO 5.0 50 nA 5.0 voltage1) Emitter-collector breakdown IE = 100 µA voltage1) Collector-base breakdown IC = 100 µA, IB = 1.0 µA voltage1) Collector-emitter leakage VCE = 10 V, IF = 0 V current1) VCE = 10 V, IF=0 4N37 ICEO 50 nA VCE = 60 V, IF = 0 4N38 ICEO 50 nA VCE = 30 V, IF = 0, Tamb = 100 °C 4N35 ICEO 500 µA 4N36 ICEO 500 µA 4N37 ICEO 500 µA 4N38 ICEO 6.0 µA CCE 6.0 pF VCE = 60 V, IF = 0, Tamb = 100 °C Collector-emitter capacitance 1) VCE = 0 Indicates JEDEC registered value Coupler Symbol Min Resistance, input to output1) Parameter VIO = 500 V RIO 1011 Capacitance (input-output) f = 1.0 MHz CIO 1) Test condition Typ. Max Unit Ω 0.5 pF Indicates JEDEC registered value Document Number 83717 Rev. 1.5, 27-Jan-05 www.vishay.com 3 4N35/ 4N36/ 4N37/ 4N38 Vishay Semiconductors Current Transfer Ratio Parameter DC Current Transfer 1) Ratio1) Test condition Part Symbol Min VCE = 10 V, IF = 10 mA 4N35 CTRDC 100 Typ. Max Unit % 4N36 CTRDC 100 % 4N37 CTRDC 100 % VCE = 10 V, IF = 20 mA 4N38 CTRDC 20 % VCE = 10 V, IF = 10 mA, TA = - 55 to + 100 °C 4N35 CTRDC 40 50 % 4N36 CTRDC 40 50 % 4N37 CTRDC 40 50 % 4N38 CTRDC 30 % Indicates JEDEC registered value Switching Characteristics Parameter Switching 1) time1) Test condition IC = 2 mA, RL = 100 Ω, VCC = 10 V Symbol Min ton, toff Typ. Max Unit µs 10 Indicates JEDEC registered value Typical Characteristics (Tamb = 25 °C unless otherwise specified) 1.4 1.5 TA = –55°C NCTR - Normlized CTR VF - Forward Voltage - V 1.3 1.2 TA = 25°C 1.1 1.0 0.9 TA = 85°C 0.8 1.0 TA=25°C 0.5 NCTR(SAT) NCTR 0.7 .1 1 10 IF - Forward Current - mA 0.0 100 i4n25_01 0 1 10 IF - LED Current - mA 100 i4n25_02 Figure 1. Forward Voltage vs. Forward Current www.vishay.com 4 Normalized to: Vce=10 V, IF=10 mA, TA=25°C CTRce(sat) Vce=0.4 V Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED Current Document Number 83717 Rev. 1.5, 27-Jan-05 4N35/ 4N36/ 4N37/ 4N38 Vishay Semiconductors 35 Normalized to: Vce=10 V, IF=10 mA, TA=25°C CTRce(sat) Vce=0.4 V 30 Ice - Collector Current - mA NCTR - Normalized CTR 1.5 1.0 TA=50°C 0.5 NCTR(SAT) NCTR 25 25°C 85°C 10 5 0 .1 1 10 IF- LED Current - mA 100 0 10 20 30 40 50 60 IF - LED Current - mA i4n25_03 i4n25_06 Figure 3. Normalized Non-saturated and Saturated CTR vs. LED Current 1.5 10 Normalized to: Vce=10 V, IF=10 mA, TA=25°C CTRce(sat) Vce=0.4 V 1.0 TA=70°C 0.5 NCTR(SAT) NCTR 0.0 .1 Figure 6. Collector-Emitter Current vs. Temperature and LED Current Iceo - Collector-Emitter - nA NCTR - Normalized CTR 70°C 15 0.0 1 10 IF - LED Current - mA 100 10 10 5 4 3 10 2 10 10 Vce = 10 V 1 Typical 0 10 –1 10 –2 –20 0 20 40 60 80 100 TA - Ambient Temperature - °C i4n25_04 i4n25_07 Figure 7. Collector-Emitter Leakage Current vs.Temp. Figure 4. Normalized Non-saturated and saturated CTR vs. LED Current 1.5 1.5 Normalized to: Vce=10 V, IF=10 mA, TA=25°C CTRce(sat) Vce = 0.4 V NCTRcb - Normalized CTRcb NCTR - Normalized CTR 50°C 20 1.0 TA=85°C 0.5 NCTR(SAT) NCTR 1 10 IF - LED Current - mA 100 i4n25_05 Figure 5. Normalized Non-saturated and saturated CTR vs. LED Current Document Number 83717 Rev. 1.5, 27-Jan-05 1.0 0.5 25°C 50°C 70°C 0.0 .1 0.0 .1 Normalized to: Vcb=9.3 V, IF=10 mA, TA=25°C 1 10 100 IF - LED Current - mA i4n25_08 Figure 8. Normalized CTRcb vs. LED Current and Temp. www.vishay.com 5 4N35/ 4N36/ 4N37/ 4N38 Vishay Semiconductors 0.1 Nib, TA=–20°C Nib, TA= 25°C Nib, TA= 50°C Nib, TA= 70°C 1 10 1.5 tPLH 1.0 1 Figure 12. Propagation Delay vs. Collector Load Resistor IF 25°C –20°C tD Normalized to: Ib=20 µA, Vce=10 V, TA=25°C 0.6 tR VO tPLH VTH=1.5 V tPHL 1 10 100 Ib - Base Current - µA i4n25_13 Figure 10. Normalized Non-saturated HFE vs. Base Current and Temperature NHFE(sat) - Normalized Saturated HFE tF tS 1000 i4n25_10 Figure 13. Switching Timing 1.5 70°C 50°C Normalized to: Vce=10 V, Ib=20 µA T A =25°C VCC = 5.0 V 1.0 F=10 KHz, DF=50% 25°C RL VO –20°C 0.5 IF=1 0 mA Vce=0.4 V 0.0 1 10 100 1000 Ib - Base Current - µA i4n25_11 Figure 11. Normalized HFE vs. Base Current and Temp. www.vishay.com 6 100 RL - Collector Load Resistor - kΩ 0.8 0.4 10 i4n25_12 70°C 1.0 2.0 10 100 Figure 9. Normalized Photocurrent vs. IF and Temp. 1.2 tPHL 1 .1 IF - LED Current - mA i4n25_09 100 tPHL - Propagation Delay - µs 1 0.01 .1 IF =10 mA,TA=25°C VCC =5.0 V, Vth=1.5 V tPLH - Propagation Delay - µs Normalized Photocurrent Normalized to: IF=10 mA, TA=25°C NHFE - Normalized HFE 2.5 1000 10 i4n25_14 Figure 14. Switching Schematic Document Number 83717 Rev. 1.5, 27-Jan-05 4N35/ 4N36/ 4N37/ 4N38 Vishay Semiconductors Package Dimensions in Inches (mm) For 4N35/36/37/38..... see DIL300-6 Package dimension in the Package Section. For products with an option designator (e.g. 4N35-X006 or 4N36-X007)..... see DIP-6 Package dimensions in the Package Section. DIL300-6 Package Dimensions 14770 DIP-6 Package Dimensions 3 2 1 4 5 6 pin one ID .248 (6.30) .256 (6.50) ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ. .018 (0.45) .022 (0.55) .300 (7.62) typ. .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) 18° .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3°–9° .114 (2.90) .130 (3.0) .010 (.25) typ. .300–.347 (7.62–8.81) i178004 Document Number 83717 Rev. 1.5, 27-Jan-05 www.vishay.com 7 4N35/ 4N36/ 4N37/ 4N38 Vishay Semiconductors Option 6 Option 7 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .300 (7.62) TYP. Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) www.vishay.com 8 .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15° max. 18450 Document Number 83717 Rev. 1.5, 27-Jan-05 4N35/ 4N36/ 4N37/ 4N38 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83717 Rev. 1.5, 27-Jan-05 www.vishay.com 9