VISHAY 4N37-X006

4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection
Features
•
•
•
•
•
•
Isolation Test Voltage 5300 VRMS
Interfaces with common logic families
Input-output coupling capacitance < 0.5 pF
Industry Standard Dual-in line 6-pin package
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
A
1
6 B
C
2
5 C
NC
3
4 E
e3
i179004
Agency Approvals
Pb
Pb-free
• Underwriters Laboratory File #E52744
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Applications
AC mains detection
Reed relay driving
Switch mode power supply feedback
Telephone ring detection
Logic ground isolation
Logic coupling with high frequency noise rejection
These isolation processes and the Vishay ISO9001
quality program results in the highest isolation performance available for a commecial plastic phototransistor optocoupler.
The devices are available in lead formed configuration suitable for surface mounting and are available
either on tape and reel, or in standard tube shipping
containers.
Note:
Designing with data sheet is cover in Application Note 45
Order Information
Part
Description
This data sheet presents five families of Vishay Industry Standard Single Channel Phototransistor Couplers.These families include the 4N35/ 4N36/ 4N37/
4N38 couplers.
Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL)
listed to comply with a 5300 VRMS isolation test voltage.
This isolation performance is accomplished through
Vishay double molding isolation manufacturing process. Comliance to DIN EN 60747-5-2(VDE0884)/
DIN EN 60747-5-5 pending partial discharge isolation
specification is available for these families by ordering
option 1.
Document Number 83717
Rev. 1.5, 27-Jan-05
Remarks
4N35
CTR > 100 %, DIP-6
4N36
CTR > 100 %, DIP-6
4N37
CTR > 100 %, DIP-6
4N38
CTR > 20 %, DIP-6
4N35-X006
CTR > 100 %, DIP-6 400 mil (option 6)
4N35-X007
CTR > 100 %, SMD-6 (option 7)
4N35-X009
CTR > 100 %, SMD-6 (option 9)
4N36-X007
CTR > 100 %, SMD-6 (option 7)
4N36-X009
CTR > 100 %, SMD-6 (option 9)
4N37-X006
CTR > 100 %, DIP-6 400 mil (option 6)
4N37-X009
CTR > 100 %, SMD-6 (option 9)
For additional information on the available options refer to
Option Information.
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1
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Symbol
Value
Reverse voltage
Parameter
VR
6.0
V
Forward current
IF
60
mA
IFSM
2.5
A
Pdiss
100
mW
Surge current
Test condition
≤ 10 µs
Power dissipation
Unit
Output
Symbol
Value
Unit
Collector-emitter breakdown
voltage
Parameter
Test condition
VCEO
70
V
Emitter-base breakdown
voltage
VEBO
7.0
V
IC
50
mA
IC
100
mA
Pdiss
150
mW
Symbol
Value
Unit
VISO
5300
VRMS
Collector current
(t ≤ 1.0 ms)
Power dissipation
Coupler
Parameter
Test condition
Isolation test voltage
Creepage
≥ 7.0
mm
Clearance
≥ 7.0
mm
Isolation thickness between
emitter and detector
≥ 0.4
mm
Comparative tracking index per
DIN IEC 112/VDE0303,part 1
175
VIO = 500 V, Tamb = 25 °C
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Tj
100
°C
Tsld
260
°C
Isolation resistance
Junction temperature
Soldering temperature
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2
max. 10 s dip soldering:
distance to seating plane
≥ 1.5 mm
Document Number 83717
Rev. 1.5, 27-Jan-05
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
1.3
1.5
V
1.3
1.7
V
0.1
10
µA
voltage1)
IF = 10 mA
VF
IF = 10 mA, Tamb = - 55 °C
VF
Reverse current1)
VR = 6.0 V
IR
Capacitance
VR = 0, f = 1.0 MHz
CO
25
Forward
1)
0.9
pF
Indicates JEDEC registered value
Output
Parameter
Collector-emitter breakdown
Test condition
IC = 1.0 mA
Part
Symbol
Min
4N35
BVCEO
30
Typ.
Max
Unit
V
4N36
BVCEO
30
V
4N37
BVCEO
30
V
4N38
BVCEO
80
V
BVECO
7.0
V
4N35
BVCBO
70
V
4N36
BVCBO
70
V
4N37
BVCBO
70
V
4N38
BVCBO
80
4N35
ICEO
5.0
50
nA
4N36
ICEO
5.0
50
nA
5.0
voltage1)
Emitter-collector breakdown
IE = 100 µA
voltage1)
Collector-base breakdown
IC = 100 µA, IB = 1.0 µA
voltage1)
Collector-emitter leakage
VCE = 10 V, IF = 0
V
current1)
VCE = 10 V, IF=0
4N37
ICEO
50
nA
VCE = 60 V, IF = 0
4N38
ICEO
50
nA
VCE = 30 V, IF = 0, Tamb =
100 °C
4N35
ICEO
500
µA
4N36
ICEO
500
µA
4N37
ICEO
500
µA
4N38
ICEO
6.0
µA
CCE
6.0
pF
VCE = 60 V, IF = 0, Tamb =
100 °C
Collector-emitter capacitance
1)
VCE = 0
Indicates JEDEC registered value
Coupler
Symbol
Min
Resistance, input to output1)
Parameter
VIO = 500 V
RIO
1011
Capacitance (input-output)
f = 1.0 MHz
CIO
1)
Test condition
Typ.
Max
Unit
Ω
0.5
pF
Indicates JEDEC registered value
Document Number 83717
Rev. 1.5, 27-Jan-05
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3
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors
Current Transfer Ratio
Parameter
DC Current Transfer
1)
Ratio1)
Test condition
Part
Symbol
Min
VCE = 10 V, IF = 10 mA
4N35
CTRDC
100
Typ.
Max
Unit
%
4N36
CTRDC
100
%
4N37
CTRDC
100
%
VCE = 10 V, IF = 20 mA
4N38
CTRDC
20
%
VCE = 10 V, IF = 10 mA,
TA = - 55 to + 100 °C
4N35
CTRDC
40
50
%
4N36
CTRDC
40
50
%
4N37
CTRDC
40
50
%
4N38
CTRDC
30
%
Indicates JEDEC registered value
Switching Characteristics
Parameter
Switching
1)
time1)
Test condition
IC = 2 mA, RL = 100 Ω, VCC = 10 V
Symbol
Min
ton, toff
Typ.
Max
Unit
µs
10
Indicates JEDEC registered value
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.4
1.5
TA = –55°C
NCTR - Normlized CTR
VF - Forward Voltage - V
1.3
1.2
TA = 25°C
1.1
1.0
0.9
TA = 85°C
0.8
1.0
TA=25°C
0.5
NCTR(SAT)
NCTR
0.7
.1
1
10
IF - Forward Current - mA
0.0
100
i4n25_01
0
1
10
IF - LED Current - mA
100
i4n25_02
Figure 1. Forward Voltage vs. Forward Current
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4
Normalized to:
Vce=10 V, IF=10 mA, TA=25°C
CTRce(sat) Vce=0.4 V
Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED
Current
Document Number 83717
Rev. 1.5, 27-Jan-05
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors
35
Normalized to:
Vce=10 V, IF=10 mA, TA=25°C
CTRce(sat) Vce=0.4 V
30
Ice - Collector Current - mA
NCTR - Normalized CTR
1.5
1.0
TA=50°C
0.5
NCTR(SAT)
NCTR
25
25°C
85°C
10
5
0
.1
1
10
IF- LED Current - mA
100
0
10
20
30
40
50
60
IF - LED Current - mA
i4n25_03
i4n25_06
Figure 3. Normalized Non-saturated and Saturated CTR vs. LED
Current
1.5
10
Normalized to:
Vce=10 V, IF=10 mA, TA=25°C
CTRce(sat) Vce=0.4 V
1.0
TA=70°C
0.5
NCTR(SAT)
NCTR
0.0
.1
Figure 6. Collector-Emitter Current vs. Temperature and LED
Current
Iceo - Collector-Emitter - nA
NCTR - Normalized CTR
70°C
15
0.0
1
10
IF - LED Current - mA
100
10
10
5
4
3
10 2
10
10
Vce = 10 V
1
Typical
0
10 –1
10 –2
–20
0
20
40
60
80
100
TA - Ambient Temperature - °C
i4n25_04
i4n25_07
Figure 7. Collector-Emitter Leakage Current vs.Temp.
Figure 4. Normalized Non-saturated and saturated CTR vs. LED
Current
1.5
1.5
Normalized to:
Vce=10 V, IF=10 mA, TA=25°C
CTRce(sat) Vce = 0.4 V
NCTRcb - Normalized CTRcb
NCTR - Normalized CTR
50°C
20
1.0
TA=85°C
0.5
NCTR(SAT)
NCTR
1
10
IF - LED Current - mA
100
i4n25_05
Figure 5. Normalized Non-saturated and saturated CTR vs. LED
Current
Document Number 83717
Rev. 1.5, 27-Jan-05
1.0
0.5
25°C
50°C
70°C
0.0
.1
0.0
.1
Normalized to:
Vcb=9.3 V, IF=10 mA, TA=25°C
1
10
100
IF - LED Current - mA
i4n25_08
Figure 8. Normalized CTRcb vs. LED Current and Temp.
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4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors
0.1
Nib, TA=–20°C
Nib, TA= 25°C
Nib, TA= 50°C
Nib, TA= 70°C
1
10
1.5
tPLH
1.0
1
Figure 12. Propagation Delay vs. Collector Load Resistor
IF
25°C
–20°C
tD
Normalized to:
Ib=20 µA, Vce=10 V, TA=25°C
0.6
tR
VO
tPLH
VTH=1.5 V
tPHL
1
10
100
Ib - Base Current - µA
i4n25_13
Figure 10. Normalized Non-saturated HFE vs. Base Current and
Temperature
NHFE(sat) - Normalized Saturated HFE
tF
tS
1000
i4n25_10
Figure 13. Switching Timing
1.5
70°C
50°C
Normalized to:
Vce=10 V, Ib=20 µA
T A =25°C
VCC = 5.0 V
1.0
F=10 KHz,
DF=50%
25°C
RL
VO
–20°C
0.5
IF=1 0 mA
Vce=0.4 V
0.0
1
10
100
1000
Ib - Base Current - µA
i4n25_11
Figure 11. Normalized HFE vs. Base Current and Temp.
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6
100
RL - Collector Load Resistor - kΩ
0.8
0.4
10
i4n25_12
70°C
1.0
2.0
10
100
Figure 9. Normalized Photocurrent vs. IF and Temp.
1.2
tPHL
1
.1
IF - LED Current - mA
i4n25_09
100
tPHL - Propagation Delay - µs
1
0.01
.1
IF =10 mA,TA=25°C
VCC =5.0 V, Vth=1.5 V
tPLH - Propagation Delay - µs
Normalized Photocurrent
Normalized to:
IF=10 mA, TA=25°C
NHFE - Normalized HFE
2.5
1000
10
i4n25_14
Figure 14. Switching Schematic
Document Number 83717
Rev. 1.5, 27-Jan-05
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors
Package Dimensions in Inches (mm)
For 4N35/36/37/38..... see DIL300-6 Package dimension in the Package Section.
For products with an option designator (e.g. 4N35-X006 or 4N36-X007)..... see DIP-6 Package dimensions in the Package Section.
DIL300-6 Package Dimensions
14770
DIP-6 Package Dimensions
3
2
1
4
5
6
pin one ID
.248 (6.30)
.256 (6.50)
ISO Method A
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
18°
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
3°–9°
.114 (2.90)
.130 (3.0)
.010 (.25)
typ.
.300–.347
(7.62–8.81)
i178004
Document Number 83717
Rev. 1.5, 27-Jan-05
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7
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors
Option 6
Option 7
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.300 (7.62)
TYP.
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0)
MIN.
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
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8
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.012 (.30) typ.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
15° max.
18450
Document Number 83717
Rev. 1.5, 27-Jan-05
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83717
Rev. 1.5, 27-Jan-05
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9