4N25, 4N26, 4N27, 4N28 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES A 1 6 B C 2 5 C NC 3 4 E • Isolation test voltage 5000 VRMS • Interfaces with common logic families • Input-output coupling capacitance < 0.5 pF • Industry standard dual-in-line 6 pin package • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 21842 APPLICATIONS i179004-5 • AC mains detection • Reed relay driving DESCRIPTION • Switch mode power supply feedback The 4N25 family is an industry standard single channel phototransistor coupler. This family includes the 4N25, 4N26, 4N27, 4N28. Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. • Telephone ring detection • Logic ground isolation • Logic coupling with high frequency noise rejection AGENCY APPROVALS • UL1577, file no. E52744 • BSI: EN 60065:2002, EN 60950:2000 • FIMKO: EN 60950, EN 60065, EN 60335 ORDER INFORMATION PART REMARKS 4N25 CTR > 20 %, DIP-6 4N26 CTR > 20 %, DIP-6 4N27 CTR > 10 %, DIP-6 4N28 CTR > 10 %, DIP-6 ABSOLUTE MAXIMUM RATINGS PARAMETER (1) TEST CONDITION SYMBOL VALUE UNIT VR 5 V mA INPUT Reverse voltage Forward current IF 60 IFSM 3 A Pdiss 100 mW Collector emitter breakdown voltage VCEO 70 V Emitter base breakdown voltage VEBO 7 V t ≤ 10 μs Surge current Power dissipation OUTPUT Collector current Power dissipation www.vishay.com 132 t ≤ 1 ms IC 50 mA IC 100 mA Pdiss 150 mW For technical questions, contact: [email protected] Document Number: 83725 Rev. 1.8, 07-Jan-10 4N25, 4N26, 4N27, 4N28 Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection ABSOLUTE MAXIMUM RATINGS PARAMETER (1) TEST CONDITION SYMBOL VALUE UNIT VISO COUPLER Isolation test voltage 5000 VRMS Creepage distance ≥7 mm Clearance distance ≥7 mm ≥ 0.4 mm Isolation thickness between emitter and detector Comparative tracking index DIN IEC 112/VDE 0303, part 1 175 Ω VIO = 500 V, Tamb = 25 °C RIO 1012 VIO = 500 V, Tamb = 100 °C RIO 1011 Ω Storage temperature Tstg - 55 to + 125 °C Operating temperature Tamb - 55 to + 100 °C Junction temperature Tj 125 °C Tsld 260 °C Isolation resistance max.10 s dip soldering: distance to seating plane ≥ 1.5 mm Soldering temperature (2) Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (1) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage (2) IF = 50 mA VF 1.3 1.5 V Reverse current (2) VR = 3 V IR 0.1 100 μA Capacitance VR = 0 V CO 25 pF OUTPUT Collector base breakdown voltage (2) IC = 100 μA BVCBO 70 Collector emitter breakdown voltage (2) IC = 1 mA BVCEO 30 V Emitter collector breakdown voltage (2) IE = 100 μA BVECO 7 V ICEO(dark) (2) VCE = 10 V, (base open) 4N25 5 50 nA 4N26 5 50 nA 4N27 5 50 nA 4N28 10 100 nA 2 20 nA VCB = 10 V, (emitter open) ICBO(dark) (2) Collector emitter capacitance VCE = 0 V CCE 6 pF COUPLER Isolation test voltage (2) Peak, 60 Hz VIO ICE = 2 mA, IF = 50 mA VCE(sat) Resistance, input output (2) VIO = 500 V RIO Capacitance, input output f = 1 MHz CIO Saturation voltage, collector emitter 5000 V 0.5 100 V GΩ 0.6 pF Notes (1) T amb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (2) JEDEC registered values are 2500 V, 1500 V, 1500 V, and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively. Document Number: 83725 Rev. 1.8, 07-Jan-10 For technical questions, contact: [email protected] www.vishay.com 133 4N25, 4N26, 4N27, 4N28 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection CURRENT TRANSFER RATIO PARAMETER (1) TEST CONDITION VCE = 10 V, IF = 10 mA DC current transfer ratio PART SYMBOL MIN. TYP. 4N25 CTRDC 20 50 MAX. UNIT % 4N26 CTRDC 20 50 % 4N27 CTRDC 10 30 % 4N28 CTRDC 10 30 % Note (1) Indicates JEDEC registered values. SWITCHING CHARACTERISTICS PARAMETER Rise and fall times TEST CONDITION SYMBOL VCE = 10 V, IF = 10 mA, RL = 100 Ω tr, tf MIN. TYP. MAX. UNIT 2 μs TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1.5 1.3 NCTR - Normalized CTR TA = - 55 °C 1.2 TA = 25 °C 1.1 1.0 0.9 TA = 85 °C 0.8 0.7 0.1 1 10 100 IF - Forward Current (mA) i4n25_01 NCTR - Normalized CTR 1.0 TA = 50 °C 0.5 NCTR(SAT) NCTR 0.1 1 1.0 TA = 25 °C 0.5 NCTR(SAT) Fig. 3 - Normalized Non-Saturated and Saturated CTR vs. LED Current Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 °C CTRCE(sat) VCE = 0.4 V 1.0 TA = 70 °C 0.5 NCTR(SAT) NCTR NCTR 0.0 i4n25_02 1 10 100 IF - LED Current (mA) Fig. 2 - Normalized Non-Saturated and Saturated CTR vs. LED Current www.vishay.com 134 100 1.5 Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 °C CTRCE(sat) = 0.4 V 0 10 IF - LED Current (mA) i4n25_03 Fig. 1 - Forward Voltage vs. Forward Current 1.5 Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 °C CTRCE(sat) VCE = 0.4 V 0.0 NCTR - Normalized CTR VF -Forward Voltage (V) 1.4 0.0 0.1 i4n25_04 1 10 100 IF - LED Current (mA) Fig. 4 - Normalized Non-Saturated and Saturated CTR vs. LED Current For technical questions, contact: [email protected] Document Number: 83725 Rev. 1.8, 07-Jan-10 4N25, 4N26, 4N27, 4N28 Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection 1.5 Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 °C CTRCE(sat) VCE = 0.4 V NCTRcb - Normalized CTRcb NCTR - Normalized CTR 1.5 1.0 TA = 85 °C 0.5 NCTR(SAT) NCTR 1 10 100 IF - LED Current (mA) i4n25_05 25 °C 50 °C 70 °C 1 10 100 IF - LED Current (mA) Fig. 8 - Normalized CTRcb vs. LED Current and Temperature 35 10 30 25 50 °C 20 70 °C 15 85 °C 25 °C 10 5 Normalized Photocurrent ICE - Collector Current (mA) 0.5 i4n25_08 Fig. 5 - Normalized Non-Saturated and Saturated CTR vs. LED Current 0 10 20 30 40 50 60 IF - LED Current (mA) i4n25_06 Normalized to: IF = 10 mA, TA = 25 °C 1 0.1 Nib, TA = - 20 °C Nib, TA = 20 °C Nib, TA = 50 °C Nib, TA = 70 °C 0.01 0.1 0 i4n25_09 Fig. 6 - Collector Emitter Current vs. Temperature and LED Current 1 10 100 IF - LED Current (mA) Fig. 9 - Normalized Photocurrent vs. IF and Temperature 105 1.2 70 °C 104 NhFE - Normalized hFE ICEO - Collector Emitter (nA) 1.0 0.0 0.1 0.0 0.1 Normalized to: VCB = 9.3 V, IF = 10 mA, TA = 25 °C 103 10 2 VCE = 10 V 101 Typical 100 10- 1 10- 2 - 20 i4n25_07 1.0 25 °C - 20 °C 0.8 Normalized to: IB = 20 µA, VCE = 10 V, TA = 25 °C 0.6 0.4 0 20 40 60 80 100 Tamb- Ambient Temperature (°C) Fig. 7 - Collector Emitter Leakage Current vs. Temperature Document Number: 83725 Rev. 1.8, 07-Jan-10 1 i4n25_10 10 100 1000 Ib - Base Current (µA) Fig. 10 - Normalized Non-Saturated hFE vs. Base Current and Temperature For technical questions, contact: [email protected] www.vishay.com 135 4N25, 4N26, 4N27, 4N28 Vishay Semiconductors Optocoupler, Phototransistor Output, NhFE(sat) - Normalized Saturated hFE with Base Connection 1.5 VCC = 5 V Normalized to: VCE = 10 V, Ib = 20 µA TA = 25 °C 70 °C 50 °C f = 10 kHz DF = 50 % 1.0 25 °C VO - 20 °C 0.5 IF = 10 mA VCE = 0.4 V 0.0 1 10 100 1000 i4n25_14 Ib - Base Current (µA) i4n25_11 Fig. 11 - Normalized hFE vs. Base Current and Temperature tPHL 2.0 100 1.5 10 tPLH 1 0.1 1 tPHL - Propagation Delay (µs) IF = 10 mA, TA = 25 °C VCC = 5.0 V, Vth = 1.5 V i4n25_12 Fig. 14 - Switching Schematic 2.5 1000 tPLH- Propagation Delay (µs) RL 1.0 100 10 RL - Collector Load Resistor (kΩ) Fig. 12 - Propagation Delay vs. Collector Load Resistor IF tD VO tR tPLH VTH = 1.5 V tPHL tS tF i4n25_13 Fig. 13 - Switching Timing www.vishay.com 136 For technical questions, contact: [email protected] Document Number: 83725 Rev. 1.8, 07-Jan-10 4N25, 4N26, 4N27, 4N28 Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection PACKAGE DIMENSIONS in millimeters 7.62 typ. 7.12 ± 0.3 3.5 ± 0.3 6.5 ± 0.3 1.2 ± 0.1 14771_2 6 5 4 1 2 3 4.5 ± 0.3 0.5 ± 0.1 2.8 ± 0.15 4.5 ± 0.3 0.25 7.62 to 9.5 typ. PACKAGE MARKING 4N25 V YWW 24 21764-25 Document Number: 83725 Rev. 1.8, 07-Jan-10 For technical questions, contact: [email protected] www.vishay.com 137 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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