SFH615A-3X018T www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS FEATURES A 1 4 C • Excellent CTR linearity depending on forward current C 2 3 E • Isolation test voltage, 5300 VRMS • Fast switching times • Low CTR degradation 1 17448-5 • Low coupling capacitance • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The SFH615A-3X018T features a variety of transfer ratios, low coupling capacitance and high isolation voltage. This coupler has a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic SMD package. APPLICATIONS • Switchmode power supply • Telecom • Battery powered equipment The coupling devices are designed for signal transmission between two electrically separated circuits. AGENCY APPROVALS • UL1577, file no. E52744 system code H or J, double protection • DIN EN 60747-5-5 (VDE 0884-5) available with option 1 • cUL tested to CSA 22.2 bulletin 5A • BSI IEC 60950, IEC 60065 • FIMKO EN6005, EN60950-1 ORDERING INFORMATION S F H 6 1 PART NUMBER AGENCY CERTIFIED/PACKAGE VDE, UL, cUL, BSI, FIMKO SMD-4, option 8 Rev. 1.0, 08-Feb-13 5 A - 3 CTR BIN X 0 1 8 PACKAGE OPTION T TAPE AND REEL SMD-4 9.27 mm CTR (%) 10 mA 100 to 200 SFH615A-3X018T Document Number: 84185 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH615A-3X018T www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V DC forward current IF 60 mA IFSM 2.5 A Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V tp 10 μs Surge forward current OUTPUT IC 50 mA tp 1 ms IC 100 mA t=1s VISO 5300 VRMS Creepage distance 7 mm Clearance distance 7 mm 0.4 mm Collector current COUPLER Isolation test voltage between emitter and detector Insulation thickness between emitter and detector Comparative tracking index per DIN IEC112/VDE0303 part 1 Isolation resistance CTI 175 VIO = 500 V, Tamb = 25 °C RIO 1012 VIO = 500 V, Tamb = 100 °C RIO 1011 Tstg - 55 to + 150 °C Tamb - 55 to +100 °C Tsld 260 °C Storage temperature range Ambient temperature range Soldering temperature (1) max. 10 s Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Ptot - Power Dissipation (mW) 200 150 Phototransistor 100 50 Diode 0 0 18483 25 50 75 100 125 150 Tamb - Ambient Temperature (°C) Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature Rev. 1.0, 08-Feb-13 Document Number: 84185 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH615A-3X018T www.vishay.com Vishay Semiconductors THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT LED power dissipation Pdiss 100 mW Output power dissipation Pdiss 150 mW Maximum LED junction temperature Tjmax. 125 °C Maximum output die junction temperature Tjmax. 125 °C Thermal resistance, junction emitter to board EB 173 °C/W Thermal resistance, junction emitter to case EC 149 °C/W Thermal resistance, junction detector to board DB 111 °C/W Thermal resistance, junction detector to case DC 127 °C/W Thermal resistance, junction emitter to junction detector ED 95 °C/W Thermal resistance, board to ambient (1) BA 195 °C/W Thermal resistance, case to ambient (1) CA 3573 °C/W TA θCA Package TC θEC θDC θDE TJD TJE θDB θEB TB θBA 19996 TA Notes • The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay’s thermal characteristics of optocouplers application note. (1) For 2 layer FR4 board (4" x 3" x 0.062") ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Forward voltage IF = 60 mA Reverse current VR = 6 V VR = 0 V, f = 1 MHz MIN. TYP. MAX. UNIT VF 1.25 1.65 V IR 0.01 10 μA CO 13 VCE = 5 V, f = 1 MHz CCE 5.2 VCE = 10 V ICEO 5 100 IF = 10 mA, IC = 2.5 mA VCEsat 0.25 0.4 CC 0.4 INPUT Capacitance pF OUTPUT Collector emitter capacitance Collector emitter leakage current pF nA COUPLER Collector emitter saturation voltage Coupling capacitance V pF Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER IC/IF Rev. 1.0, 08-Feb-13 TEST CONDITION SYMBOL MIN. IF = 10 mA, VCE = 5 V CTR 100 IF = 1 mA, VCE = 5 V CTR 34 TYP. 70 MAX. UNIT 200 % % Document Number: 84185 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH615A-3X018T www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT NON-SATURATED Rise time IF = 10 mA, VCC = 5 V, TA = 25 °C, RL = 75 tr 2 μs Fall time IF = 10 mA, VCC = 5 V, TA = 25 °C, RL = 75 tf 2 μs Turn-on time IF = 10 mA, VCC = 5 V, TA = 25 °C, RL = 75 ton 3 μs Turn-off time IF = 10 mA, VCC = 5 V, TA = 25 °C, RL = 75 toff 2.3 μs Cut-off frequency IF = 10 mA, VCC = 5 V, TA = 25 °C, RL = 75 fctr 250 kHz SATURATED Rise time VCC = 5 V, TA = 25 °C, RL = 1 k, IF = 10 mA tr 3 μs Fall time VCC = 5 V, TA = 25 °C, RL = 1 k, IF = 10 mA tf 14 μs Turn-on time VCC = 5 V, TA = 25 °C, RL = 1 k, IF = 10 mA ton 4.2 μs Turn-off time VCC = 5 V, TA = 25 °C, RL = 1 k, IF = 10 mA toff 23 μs SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. Climatic classification (according to IEC 68 part 1) TYP. MAX. UNIT 55/100/21 Comparative tracking index CTI 175 VIOTM VIOTM 10 000 VIORM VIORM 890 PSO 399 Vpeak Vpeak PSO 400 mW ISI ISI 275 mA TSI TSI 175 Creepage distance 7 Clearance distance Insulation thickness, reinforced rated per IEC 60950 2.10.5.1 °C mm 7 mm 0.4 mm Note • As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. Rev. 1.0, 08-Feb-13 Document Number: 84185 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH615A-3X018T www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 30 IF =14 mA R L = 75 Ω IF 12 mA VCC = 5 V 10 mA IC (mA) IC 20 8 mA 6 mA 10 47 Ω 4 mA 1 mA 0 isfh615a_01 0 5 10 15 VCE (V) isfh615a_04 Fig. 2 - Linear Operation (without Saturation) 2 mA Fig. 5 - Output Characteristics (Typ.) Collector Current vs. Collector Emitter Voltage 1.2 25° 50° 75° 1Ω IF 1.1 VF (V) V CC = 5 V 1.0 47 Ω isfh615a_02 0.9 10- 1 100 101 102 IF (mA) isfh615a_05 Fig. 6 - Diode Forward Voltage (Typ.) vs. Forward Current Fig. 3 - Switching Operation (with Saturation) 103 20 IF = 10 mA, VCE = 5 V 5 f = 1 MHz 15 3 C (pF) IC (%) I 4 2 102 1 10 CCE 5 5 101 - 25 isfh615a_03 0 0 25 50 75 TA (°C) Fig. 4 - Current Transfer Ratio (Typ.) vs. Temperature Rev. 1.0, 08-Feb-13 10-2 isfh615a_06 10-1 100 101 102 Ve (V) Fig. 7 - Transistor Capacitance (Typ.) vs. Collector Emitter Voltage Document Number: 84185 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH615A-3X018T www.vishay.com 104 D= tp tp IF T T IF (mA) 103 D=0 0.005 0.01 0.02 0.05 0.1 Vishay Semiconductors 102 0.2 0.5 DC 101 10- 5 isfh615a_07 10- 4 Pulse cycle D = parameter 10- 3 10- 2 10- 1 100 101 tp (s) Fig. 8 - Permissible Pulse Handling Capability Forward Current vs. Pulse Width 0.76 2.54 PACKAGE DIMENSIONS millimeters pin one ID R0.25 6.48 6.81 9.95 min. 13 3 1.78 1.52 4 4.55 4.83 ISO method A 0.76 1.14 7.62 typ. 0.79 typ. 3.30 3.81 4° typ. 0.25 ± 0.1 0.249 0.102 2.54 typ. 22691 3.5 ± 0.3 9.27 min. 12.1 max. 1.27 typ. PACKAGE MARKING (example of SFH615A-3X018T) YWW Y 68 SFH615A-3 V Notes • VDE logo is only marked on option 1 parts. • Tape and reel suffix (T) is not part of the package marking. Rev. 1.0, 08-Feb-13 Document Number: 84185 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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