VO4257, VO4258 www.vishay.com Vishay Semiconductors Optocoupler, Phototriac Output, High dV/dt, Low Input Current FEATURES A 1 6 MT2 • High static dV/dt 5 kV/μs C 2 5 NC • High input sensitivity IFT = 1.6 mA, 2 mA, and 3 mA • 700 and 800 V blocking voltage 4 MT1 NC 3 • 300 mA on-state current i179035_2 • Isolation test voltage 5300 VRMS V D E 21842-1 • Compliant to RoHS Directive 2011/65/EU DESCRIPTION APPLICATIONS The VO4257 and VO4258 phototriac consists of a GaAs IRLED optically coupled to a photosensitive non-zero crossing TRIAC packaged in a DIP-6 package. • Solid-state relays • Industrial controls High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of 1.6 mA for bin D, 2 mA for bin H, and 3 mA for bin M. • Office equipment The new non zero phototriac family use a proprietary dV/dt clamp resulting in a static dV/dt of greater than 5 kV/μs. • UL1577, file no. E52744 system code H or J, double protection The VO4257, VO4258 phototriac isolates low-voltage logic from 120 VAC, 240 VAC, and 380 VAC lines to control resistive, inductive, or capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays. • cUL - file no. E52744, equivalent to CSA bulletin 5A • Consumer appliances AGENCY APPROVALS • DIN EN 60747-5-2 (VDE 0884) available with option 1 ORDERING INFORMATION V O 4 2 5 # X - PART NUMBER X 0 0 # DIP-6 Option 6 7.62 mm 10.16 mm T PACKAGE OPTION TAPE AND REEL Option 7 > 0.7 mm VDRM 700 AGENCY CERTIFIED/PACKAGE UL, cUL, BSI, FIMKO VDRM 800 TRIGGER CURRENT, IFT (mA) 1.6 2 3 1.6 2 3 VO4257D VO4257H V4257M VO4258D VO4258H VO4258M DIP-6, 400 mil, option 6 VO4257D-X006 VO4257H-X006 VO4257M-X006 VO4258D-X006 VO4258H-X006 VO4258M-X006 SMD-6, option 7 VO4257D-X007T VO4257H-X007T VO4257M-X007T DIP-6 VDE, UL, cUL, BSI, FIMKO SMD-6, option 7 Rev. 1.6, 29-Feb-12 VO4258D-X007T VO4258H-X007T VO4258M-X007T 1.6 2 3 1.6 2 3 - - - - VO4258H-X017T - Document Number: 84635 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4257, VO4258 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA 1.33 mW/°C V Derate from 25 °C OUTPUT VO4257D/H/M VDRM 700 VO4258D/H/M VDRM 800 V ITM 300 mA 6.6 mW/°C VISO 5300 VRMS Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Tsld 260 °C Peak off-state voltage RMS on-state current Derate from 25 °C COUPLER Isolation test voltage (between emitter and detector, climate per DIN 500414, part 2, Nov. 74) t=1s max. ≤ 10 s dip soldering ≥ 0.5 mm from case bottom Soldering temperature Note • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. 350 IL - Load Current (mA) 300 250 IF = 3 mA to 10 mA 200 150 100 50 0 - 40 - 20 19623 0 20 40 60 80 100 Tamb - Temperature (°C) Fig. 1 - Recommended Operating Condition Rev. 1.6, 29-Feb-12 Document Number: 84635 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4257, VO4258 www.vishay.com Vishay Semiconductors THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT LED power dissipation Pdiss 100 mW Output power dissipation Pdiss 500 mW Total power dissipation Ptot 600 mW Maximum LED junction temperature Tjmax. 125 °C Maximum output die junction temperature Tjmax. 125 °C Thermal resistance, junction emitter to board θJEB 150 °C/W Thermal resistance, junction emitter to case θJEC 139 °C/W Thermal resistance, junction detector to board θJDB 78 °C/W Thermal resistance, junction detector to case θJDC 103 °C/W Thermal resistance, junction emitter to junction detector θJED 496 °C/W θCA 3563 Thermal resistance, case to ambient TA θCA Package TC θEC θDC θDE TJD TJE θDB θEB TB θBA 19996 TA °C/W Note • The thermal characteristics table above were measured at 25 °C and the thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics of Optocouplers application note. ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 10 mA VF 1.2 1.4 V Reverse current VR = 6 V IR 0.1 10 μA VF = 0 V, f = 1 MHz CI 40 Input capacitance pF OUTPUT Repetitive peak off-state voltage Off-state current On-state voltage On-current Critical state of rise of off-state voltage IDRM = 100 μA VO4257D/H/M VDRM 700 VO4258D/H/M VDRM 800 VD = VDRM IDRM V V 100 μA IT = 300 mA VTM 3 V PF = 1, VT(RMS) = 1.7 V ITM 300 mA VD = 0.67 VDRM, TJ = 25 °C dV/dtcr 5000 V/μs COUPLER LED trigger current, current required to latch output Capacitance (input to output) VD = 3 V f = 1 MHz, VIO = 0 V VO4257D IFT 1.6 mA VO4257H IFT 2 mA VO4257M IFT 3 mA VO4258D IFT 1.6 mA VO4258H IFT 2 mA VO4258M IFT 3 mA CIO 0.8 pF Note • Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Rev. 1.6, 29-Feb-12 Document Number: 84635 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4257, VO4258 www.vishay.com Vishay Semiconductors SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT 55/100/2 1 Climatic classification (according to IEC68 part 1) Pollution degree (DIN VDE 0109) 2 Comparative tracking index per DIN IEC112/ VDE 0303 part 1, group IIIa per DIN VDE 6110 175 399 175 399 VIOTM VIOTM 8000 V VIORM VIORM 890 V PSO PSO 500 mW ISI ISI 250 mA TSI TSI 175 °C Creepage distance 7 mm Clearance distance 7 mm TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 IDRM - Leakage Current (nA) 1.6 VF (V) 1.4 1.2 0 °C 25 °C 1.0 50 °C 0.8 0.1 1 10 1 - 60 - 40 - 20 40 60 80 100 38 36 IR = 10 µA 34 32 - 60 - 40 - 20 ITM - On-State Current (mA) 1000 40 VR (V) 20 Fig. 4 - Leakage Current vs. Ambient Temperature 42 100 0 °C 10 25 °C IF = 2 mA 85 °C 0 20 40 60 1 80 100 Temperature (°C) Fig. 3 - Diode Reverse Voltage vs. Temperature Rev. 1.6, 29-Feb-12 0 TA - Ambient Temperature (°C) 19999 Fig. 2 - Diode Forward Voltage vs. Forward Current 19527 10 100 IF (m A) 19521 IDRM at 830 V 100 19528 1 2 3 4 VTM - On-State Voltage (V) Fig. 5 - Output On Current (ITM) vs. Voltage Document Number: 84635 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4257, VO4258 www.vishay.com Vishay Semiconductors 1.8 90 1.6 80 1.4 Output Leakage Current (pA) 100 Normalized IH 70 60 50 85 °C 40 30 1.2 1.0 0.8 0.6 0.4 20 25 °C 10 0.2 0 °C 0 0 200 400 600 0.0 - 60 - 40 - 20 800 Voltage (V) 20007 14 IFT - Trigger Current (mA) 16 1.6 1.2 1.0 0.8 0.6 0.4 Normalized IFT at 25 ºC 0.2 0.0 - 60 - 40 - 20 0 20 40 60 40 60 80 100 12 10 85 ºC 8 100 ºC 6 4 - 40 ºC 2 25 ºC 0 80 100 10 20 30 40 50 60 70 Trigger Pulse Width (µs) Temperature (ºC) 19529 20 Fig. 9 - Normalized Holding Current vs. Temperature 1.8 1.4 0 Temperature (ºC) 20000 Fig. 6 - Output Off Current (Leakage) vs. Voltage Normalized IFT Normalized IH at 25 °C 20006 Fig. 7 - Normalized Trigger Input Current vs. Temperature Fig. 1IFT vs. LED Pulse Width 3.5 3.0 IFT (mA) 2.5 2.0 1.5 1.0 0.5 0.0 10 100 1000 Turn-On Time (µs) 19626 Fig. 8 - Trigger Current vs. Turn-On Time Rev. 1.6, 29-Feb-12 Document Number: 84635 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4257, VO4258 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 3 2 1 4 5 6 Pin one ID 6.30 6.50 ISO method A 8.50 8.70 7.62 typ. 1.22 1.32 1 min. 3.30 3.81 4° typ. 18° 0.84 typ. 0.46 0.51 3.30 3.81 3° to 9° 0.20 0.30 0.84 typ. 7.62 to 8.81 2.54 typ. i178014 Option 6 Option 7 7.62 typ. 7.62 typ. 3.5 ± 0.3 0.7 min. 4.3 ± 0.3 0.1 min. 8 min. 2.55 ± 0.25 0.6 min. 10.3 max. 0.76 2.54 10.16 typ. 20802-18 1.52 8 min. 11.05 1.78 R 0.25 PACKAGE MARKING (example) VO4257 X017 V YWW H 68 Note • VDE logo is only marked on option 1 parts. Tape and reel suffix (T) is not part of the package marking. Rev. 1.6, 29-Feb-12 Document Number: 84635 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000