VISHAY VO4154D

VO4154, VO4156
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototriac Output, Zero Crossing,
High dV/dt, Low Input Current
FEATURES
A 1
6 MT2
• High static dV/dt 5 kV/μs
C 2
5 NC
• High input sensitivity IFT = 1.6 mA, 2 mA, and
3 mA
ZCC*
NC 3
• 300 mA on-state current
4 MT1
• Zero voltage crossing detector
*Zero crossing circuit
i179030_4
21842-1
• 400 V and 600 V blocking voltage
V
D E
• Isolation test voltage 5300 VRMS
DESCRIPTION
• Compliant to RoHS Directive 2011/65/EU
The VO4154 and VO4156 consists of a GaAs IRLED
optically coupled to a photosensitive zero crossing TRIAC
packaged in a DIP-6 package.
APPLICATIONS
High input sensitivity is achieved by using an emitter
follower phototransistor and a cascaded SCR predriver
resulting in an LED trigger current of 1.6 mA for bin D, 2 mA
for bin H, and 3 mA for bin M.
• Industrial controls
The new phototriac zero crossing family uses a proprietary
dV/dt clamp resulting in a static dV/dt of greater than
5 kV/μs.
AGENCY APPROVALS
The VO4154 and VO4156 isolates low-voltage logic from
120 VAC, 240 VAC, and 380 VAC lines to control resistive,
inductive, or capacitive loads including motors, solenoids,
high current thyristors or TRIAC and relays.
• cUL - file no. E52744, equivalent to CSA bulletin 5A
• Solid-state relays
• Office equipment
• Consumer appliances
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-2 (VDE 0884) available with option 1
ORDERING INFORMATION
V
O
4
1
5
#
X
-
PART NUMBER
X
0
0
#
PACKAGE OPTION
DIP-6
Option 6
7.62 mm
10.16 mm
T
TAPE
AND
REEL
Option 7
> 0.7 mm
VDRM 400
AGENCY
CERTIFIED/PACKAGE
UL, cUL
DIP-6
VDRM 600
TRIGGER CURRENT, IFT (mA)
1.6
2
3
1.6
2
3
VO4154D
VO4154H
VO4154M
VO4156D
VO4156H
VO4156M
VO4156M-X006
DIP-6, 400 mil, option 6
VO4154D-X006
VO4154H-X006
VO4154M-X006
VO4156D-X006
VO4156H-X006
SMD-6, option 7
VO4154D-X007T
VO4154H-X007T VO4154M-X007T
VO4156D-X007T
VO4156H-X007T VO4156M-X007T
Rev. 1.6, 23-Feb-12
Document Number: 84797
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VO4154, VO4156
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6
V
Forward current
IF
60
mA
Surge current
IFSM
2.5
A
Power dissipation
Pdiss
100
mW
1.33
mW/°C
Derate from 25 °C
OUTPUT
VO4154D/H/M
VDRM
400
V
VO4156D/H/M
VDRM
600
V
ITM
300
mA
Pdiss
500
mW
6.6
mW/°C
VISO
5300
VRMS
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to + 100
°C
Tsld
260
°C
Peak off-state voltage
RMS on-state current
Total power dissipation
Derate from 25 °C
COUPLER
Isolation test voltage (between
emitter and detector, climate per
DIN 500414, part 2, Nov. 74)
t = 1 min
max. ≤ 10 s dip soldering
≥ 0.5 mm from case bottom
Soldering temperature
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
350
IL - Load Current (mA)
300
250
IF = 3 mA to 10 mA
200
150
100
50
0
- 40 - 20
19623
0
20
40
60
80
100
Tamb - Temperature (°C)
Fig. 1 - Recommended Operating Condition
Rev. 1.6, 23-Feb-12
Document Number: 84797
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VO4154, VO4156
www.vishay.com
Vishay Semiconductors
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
LED power dissipation
Pdiss
100
mW
Output power dissipation
Pdiss
500
mW
Maximum LED junction temperature
Tjmax.
125
°C
Tjmax.
125
Thermal resistance, junction emitter to board
θJEB
150
°C/W
Thermal resistance, junction emitter to case
θJEC
139
°C/W
Thermal resistance, junction detector to board
θJDB
78
°C/W
Thermal resistance, junction detector to case
θJDC
103
°C/W
Thermal resistance, junction emitter to
junction detector
θJED
496
°C/W
Thermal resistance, case to ambient
θCA
3563
°C/W
Maximum output die junction temperature
TA
θCA
Package
TC
°C
θEC
θDC
θDE
TJD
TJE
θDB
θEB
TB
θBA
19996
TA
Note
• The thermal characteristics table above were measured at 25 °C and the thermal model is represented in the thermal network below. Each
resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal
resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation
of the thermal model, please reference Vishay's Thermal Characteristics of Optocouplers application note.
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
VF
1.2
1.4
V
VR = 6 V
IR
0.1
10
μA
VF = 0 V, f = 1 MHz
CI
25
INPUT
Forward voltage
Reverse current
Input capacitance
IF = 10 mA
pF
OUTPUT
Repetitive peak off-state voltage
Off-state current
IDRM = 100 μA
VO4154D/H/M
VDRM
400
VO4156D/H/M
VDRM
600
V
V
VD = VDRM, IF = 0 A
IDRM
On-state voltage
IT = 300 mA
VTM
3
V
On-state current
PF = 1, VT(RMS) = 1.7 V
ITM
300
mA
IF = 2 mA, VDRM
IDINH
200
μA
IH
500
μA
IF = rated IFT
VIH
20
V
VD = 0.67 VDRM, TJ = 25 °C
dV/dtcr
5000
V/μs
dV/dtcr
8
A/μs
Off-state current in inhibit state
Holding current
Zero cross inhibit voltage
Critical rate of rise of off-state
voltage
Critical rate of rise of on-state
100
μA
COUPLER
LED trigger current,
current required to latch output
VD = 3 V
Common mode coupling
capacitance
Capacitance (input to output)
f = 1 MHz, VIO = 0 V
VO4154D
IFT
1.6
mA
VO4154H
IFT
2
mA
mA
VO4154M
IFT
3
VO4156D
IFT
1.6
mA
VO4156H
IFT
2
mA
VO4156M
IFT
3
mA
CCM
0.01
pF
CIO
0.8
pF
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
Rev. 1.6, 23-Feb-12
Document Number: 84797
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VO4154, VO4156
www.vishay.com
Vishay Semiconductors
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Climatic classification (according to IEC68 part 1)
MAX.
UNIT
55/100/21
Pollution degree (DIN VDE 0109)
2
Comparative tracking index per DIN IEC112/VDE 0303 part 1,
group IIIa per DIN VDE 6110 175 399
175
399
VIOTM
VIOTM
8000
V
VIORM
VIORM
890
V
PSO
PSO
500
mW
ISI
ISI
250
mA
TSI
TSI
175
°C
Creepage distance
7
mm
Crearance distance
7
mm
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10 000
IDRM - Leakage Current (nA)
1.5
VF (V)
1.3
1.1
0 °C
25 °C
50 °C
0.9
1000
100
IRDM at 630 V
10
0.7
1
0.1
1.0
10.0
IF (mA)
19660
0
100.0
20008
Fig. 2 - Diode Forward Voltage vs. Forward Current
38
36
34
IR = 10 µA
32
- 60 - 40 - 20
0
20
40
60
ITM - On-State Current (mA)
VR (V)
60
80
100
1000
40
100
0 °C
10
25 °C
85 °C
1
1.0
80 100
Temperature (ºC)
Fig. 3 - Diode Reverse Voltage vs. Temperature
Rev. 1.6, 23-Feb-12
40
Fig. 4 - Leakage Current vs. Ambient Temperature
42
19662
20
TA - Ambient Temperature (°C)
19685
1.5
IF = 2 mA
2.0
2.5
3.0
3.5
VTM - On-State Voltage (V)
Fig. 5 - On-State Current vs. On-State Voltage
Document Number: 84797
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VO4154, VO4156
www.vishay.com
Vishay Semiconductors
1.4
Normalized IH
at 25 °C
85 °C
4500
1.2
4000
25 °C
3500
3000
Normalized IH
Output Leakage current (nA)
5000
0 °C
2500
2000
1500
1.0
0.8
0.6
0.4
1000
0.2
500
0
0
200
400
600
Voltage (V)
20009
20
1.0
0.8
0.6
0.4
Normalized IFT
at 25 ºC
0.2
0.0
- 60 - 40 - 20
40
60
80 100
18
16
14
12
85 ºC
10
100 ºC
8
6
4
- 40 ºC
2
25 ºC
0
0
20
40
60
10
80 100
Temperature (ºC)
19666
IFT - Trigger Current (mA)
22
1.6
1.2
20
Fig. 9 - Normalized Holding Current vs. Temperature
1.8
1.4
0
Temperature (ºC)
20011
Fig. 6 - Output Off Current (Leakage) vs. Voltage
Normalized IFT
0.0
- 60 - 40 - 20
800
20012
Fig. 7 - Normalized Trigger Input Current vs. Temperature
20
30
40
50
60
70
Trigger Pulse Width (µs)
Fig. 10 - IFT vs. LED Pulse Width
3.5
3.0
IFT - (mA)
2.5
2.0
1.5
1.0
0.5
0.0
10
100
1000
Turn-On Time (µs)
20010
Fig. 8 - IFT (mA) vs. Turn-On Time (μs)
Rev. 1.6, 23-Feb-12
Document Number: 84797
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VO4154, VO4156
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
3
2
1
4
5
6
Pin one ID
6.30
6.50
ISO method A
8.50
8.70
7.62 typ.
1.22
1.32
1 min.
3.30
3.81
4° typ.
18°
3.30
3.81
0.84 typ.
0.46
0.51
3° to 9°
0.20
0.30
0.84 typ.
7.62 to 8.81
2.54 typ.
i178014
Option 6
Option 7
Option 8
7.62 typ.
7.62 typ.
7.62 typ.
3.5 ± 0.3
0.7 min.
4.3 ± 0.3
0.25 ± 0.1
3.5 ± 0.3
0.1 min.
8 min.
2.55 ± 0.25
9.27 min.
0.6 min.
10.3 max.
12.1 max.
10.16 typ.
0.76
R 0.25
2.54
0.76
2.54
R 0.25
1.78
20802-41
8 min.
11.05
1.52
1.78
8 min.
11.05
1.52
PACKAGE MARKING (example)
VO4154
X017
V YWW H 68
Notes
• Only options 1, 7, and 8 are reflected in the package marking.
• The VDE Logo is only marked on option 1 parts.
• Tape and reel suffix (T) is not part of the package marking.
Rev. 1.6, 23-Feb-12
Document Number: 84797
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000