TCET2600, TCET4600 Datasheet

TCET2600, TCET4600
Vishay Semiconductors
Optocoupler, Phototransistor Output,
AC Input (Dual, Quad Channel)
FEATURES
• Extra low coupling capacity - typical 0.2 pF
Quad Channel
• High common mode rejection
Dual Channel
• Low temperature coefficient of CTR
• Rated impulse voltage (transient overvoltage)
VIOTM = 10 kV peak
• Isolation test voltage (partial discharge test
voltage) Vpd = 1.6 kV peak
i179012-2
C
• Rated
isolation
VIOWM = 600 VRMS
E
voltage
(RMS
includes
DC)
• Rated recurring peak voltage (repetitive) VIORM = 848 Vpeak
• Thickness though insulation ≥ 0.4 mm
1
A
• Creepage current resistance according to VDE 0303/
IEC 60112 comparative tracking index: CTI ≥ 175
C
8 PIN
• Compliant to RoHS Directive to 2002/95/EC and in
accordance WEEE 2002/96/EC
16 PIN
V
D E
17196_1
C
AGENCY APPROVALS
• UL1577, file no. E52744 system code H, double protection
DESCRIPTION
• CSA 22.2 bulletin 5A, double protection
The TCET2600, TCET4600 consists of a phototransistor
optically coupled to 2 gallium arsenide infrared-emitting
diodes in 8 pin or 16 lead plastic dual inline package.
• DIN EN 60747-5-2 (VDE 0884)
DIN EN 60747-5-5 (pending)
• FIMKO
ORDERING INFORMATION
DIP
T
C
E
T
#
6
0
0
PART NUMBER
7.62 mm
CTR (%)
AGENCY CERTIFIED/ PACKAGE
± 5 mA
UL, cUL, VDE, FIMKO
20 to 300
DIP-8, dual channel
TCET2600
DIP-16, quad channel
TCET4600
ABSOLUTE MAXIMUM RATINGS
PARAMETER
(1)
(Tamb = 25 °C, unless otherwise specified)
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6
V
Forward current
IF
± 60
mA
Forward surge current
Power dissipation
Junction temperature
Document Number: 83726
Rev. 1.6, 10-Dec-10
tp ≤ 10 μs
IFSM
± 1.5
A
Pdiss
100
mW
Tj
125
°C
For technical questions, contact: [email protected]
www.vishay.com
1
TCET2600, TCET4600
Vishay Semiconductors Optocoupler, Phototransistor Output,
AC Input (Dual, Quad Channel)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
(1)
(Tamb = 25 °C, unless otherwise specified)
TEST CONDITION
SYMBOL
VALUE
UNIT
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
7
V
mA
OUTPUT
Collector current
IC
50
ICM
100
mA
Pdiss
150
mW
Tj
125
°C
VRMS
tp/T = 0.5, tp ≤ 10 ms
Collector peak current
Power dissipation
Junction temperature
COUPLER
Isolation test voltage (RMS)
t=1s
VISO
5300
VIORM
890
VP
Total power dissipation
Ptot
250
mW
Operating ambient temperature range
Tamb
- 55 to + 100
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Tsld
260
°C
Isolation voltage
2 mm from case, t ≤ 10 s
Soldering temperature (2)
Notes
(1) Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices.
ELECTRICAL CHARACTERISTCS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
1.6
UNIT
INPUT
Forward voltage
IF = ± 50 mA
VF
1.25
VR = 0 V, f = 1 MHz
Cj
50
Collector emitter voltage
IC = 100 μA
VCEO
70
V
Emitter collector voltage
IE = 100 μA
VECO
7
V
VCE = 20 V, IF = 0 A,
E=0
ICEO
100
nA
Collector emitter saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
0.3
V
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100 Ω
fc
100
kHz
f = 1 MHz
Ck
0.3
pF
Junction capacitance
V
pF
OUTPUT
Collector dark current
COUPLER
Coupling capacitance
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
IC/IF
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2
TEST CONDITION
SYMBOL
MIN.
VCE = 5 V, IF = ± 5 mA
CTR
20
TYP.
For technical questions, contact: [email protected]
MAX.
UNIT
300
%
Document Number: 83726
Rev. 1.6, 10-Dec-10
TCET2600, TCET4600
Optocoupler, Phototransistor Output, Vishay Semiconductors
AC Input (Dual, Quad Channel)
MAXIMUM SAFETY RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF
275
mA
Pdiss
400
mW
VIOTM
10
kV
Tsi
175
°C
INPUT
Forward current
OUTPUT
Power dissipation
COUPLER
Rated impulse voltage
Safety temperature
Note
• According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety
ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
TEST CONDITION
SYMBOL
MIN.
Partial discharge test voltage routine test
PARAMETER
100 %, ttest = 1 s
Vpd
1.669
Partial discharge test voltage lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
VIOTM
10
kV
Vpd
1.424
kV
Ptot - Total Power Dissipation (mW)
Insulation resistance
MAX.
UNIT
kV
VIO = 500 V
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
VIO = 500 V, Tamb = 150 °C
(construction test only)
RIO
109
Ω
VIOTM
450
t1, t2
t3 , t4
ttest
tstres
400
Phototransistor
Psi (mW)
350
300
= 1 to 10 s
=1s
= 10 s
= 12 s
VPd
250
VIOWM
VIORM
200
IR-diode
Isi (mA)
150
100
50
0
t3 ttest t4
0
0
22441
TYP.
25
50
75
100
125
150
175
13930
t1
tTr = 60 s
Tsi - Safety Temperature (°C)
Fig. 1 - Derating Diagram
Document Number: 83726
Rev. 1.6, 10-Dec-10
t2
t stres
t
Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5
For technical questions, contact: [email protected]
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3
TCET2600, TCET4600
Vishay Semiconductors Optocoupler, Phototransistor Output,
AC Input (Dual, Quad Channel)
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Delay time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
td
3
μs
Rise time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
tr
3
μs
Fall time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
tf
4.7
μs
Storage time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
ts
0.3
μs
Turn-on time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
ton
6
μs
Turn-off time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
toff
5
μs
Turn-on time
VS = 5 V, IF = 10 mA, RL = 1 kΩ,
(see figure 4)
ton
9
μs
Turn-off time
VS = 5 V, IF = 10 mA, RL = 1 kΩ,
(see figure 4)
toff
10
μs
IF
IF
+5V
IF
0
0
IC = 2 mA; adjusted through
input amplitude
RG = 50 Ω
tp
= 0.01
T
tp = 50 µs
Channel I
Channel II
50 Ω
100 Ω
Oscilloscope
RL > 1 MΩ
CL < 20 pF
Fig. 3 - Test Circuit, Non-Saturated Operation
IF
IF = 10 mA
0
t
100 %
90 %
10 %
0
tr
td
t on
tp
td
tr
t on (= td + tr)
13343
tp
IC
Pulse duration
Delay time
Rise time
Turn-on time
ts
tf
t off
ts
tf
t off (= ts + tf)
t
Storage time
Fall time
Turn-off time
96 11698
Fig. 5 - Switching Times
+5V
IC
RG = 50
tp
= 0.01
T
tp = 50 µs
Channel I
Channel II
50
Oscilloscope
RL > 1 M
CL < 20 pF
1k
13344
Fig. 4 - Test Circuit, Saturated Operation
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4
For technical questions, contact: [email protected]
Document Number: 83726
Rev. 1.6, 10-Dec-10
TCET2600, TCET4600
Optocoupler, Phototransistor Output, Vishay Semiconductors
AC Input (Dual, Quad Channel)
Ptot - Total Power Dissipation (mW)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
300
10 000
250
200
Phototransistor
150
IR-diode
100
IF = 0 mA
ICE0 - Leakage Current (nA)
Coupled device
50
1000
100
40
80
0.01
0.001
- 60 - 40 - 20
40
60
80 100
30
IC - Collector Current (mA)
VF - Forward Voltage (V)
20
Fig. 9 - Leakage Current vs. Ambient Temperature
1.8
1.6
Tamb = 0 °C
Tamb = - 40 °C
1.4
Tamb = - 55 °C
1.2
Tamb = 25 °C
Tamb = 50 °C
Tamb = 75 °C
1.0
0.8
Tamb = 100 °C
25
IF = 25 mA
20
IF = 10 mA
15
10
IF = 5 mA
5
IF = 1 mA
IF = 2 mA
0
0.6
0.1
1
10
0
100
IF - Forward Current (mA)
22462
22464
Fig. 7 - Forward Current vs. Forward Voltage
0.1
0.2
0.3
0.4
VCE - Collector Emitter Voltage (sat) (V)
Fig. 10 - Collector Current vs. Collector Emitter Voltage (sat)
50
1.4
45
NCTR - Normalized CTR (NS)
IC - Collector Current (mA)
0
Tamb - Ambient Temperature (°C)
22465
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
IF = 30 mA
40
IF = 20 mA
35
30
IF = 15 mA
25
IF = 10 mA
20
15
IF = 5 mA
10
5
1.2
0
1
2
3
4
5
6
7
IF = 5 mA
0.8
0.6
Fig. 8 - Collector Current vs. Collector Emitter Voltage (NS)
Document Number: 83726
Rev. 1.6, 10-Dec-10
IF = 1 mA
0.4
0.2
0
- 60 - 40 - 20
8
VCE - Collector Emitter Voltage (NS) (V)
VCE = 5 V
IF = 10 mA
1.0
0
22463
VCE = 12 V
0.1
120
Tamb - Ambient Temperature (°C)
96 11700
VCE = 24V
1
0
0
VCE = 40 V
10
22466
0
20
40
60
80 100
Tamb - Ambient Temperature (°C)
Fig. 11 - Normalized CTR (NS) vs. Ambient Temperature
For technical questions, contact: [email protected]
www.vishay.com
5
TCET2600, TCET4600
Vishay Semiconductors Optocoupler, Phototransistor Output,
AC Input (Dual, Quad Channel)
0
VCE = 0.4 V
IF = 5 mA
- 40
IF = 10 mA
0.8
0.6
IF = 1 mA
0.4
VCE = 5 V
- 20
1.0
Phase (deg)
NCTR - Normalized CTR (sat)
1.2
- 60
- 80
- 100
- 120
0.2
- 140
0
- 60 - 40 - 20
- 160
0
20
40
60
80 100
1
10
Fig. 12 - Normalized CTR (sat) vs. Ambient Temperature
1000
VCE = 5 V
VCC = 5 V
Tamb = 0 °C
1.2
Tamb = - 40 °C
1.0
Tamb = - 55 °C
0.8
0.6
Tamb = 25 °C
0.4
100
10
Tamb = 50 °C
Tamb = 75 °C
0.2
Tamb = 100 °C
1
0.0
0.1
1
10
0.1
100
IF - Forward Current (mA)
22468
Tamb = 0 °C
Tamb = - 40 °C
0.8 T = - 55 °C
amb
0.6
Tamb = 25 °C
0.4
Tamb = 50 °C
0.2
Tamb = 75 °C
Tamb = 100 °C
0.0
100
1000
ton, toff - Switching Time (μs)
VCE = 0.4 V
10
IC (mA)
Fig. 16 - FCTR vs. IC
1.2
1.0
1
22471
Fig. 13 - Normalized CTR (NS) vs. Forward Current
NCTR - Normalized CTR (sat)
1000
Fig. 15 - FCTR vs. Phase Angle
FCTR (kHz)
NCTR - Normalized CTR (NS)
1.4
100
f (kHz)
22470
Tamb - Ambient Temperature (°C)
22467
VCE = 5 V, IF = 10 mA
100
toff (μs)
10
ton (μs)
1
0.1
0.1
22469
1
10
100
IF - Forward Current (mA)
Fig. 14 - Normalized CTR (sat) vs. Forward Current
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6
0
22472
5
10
15
20
RL - Load Resistance (kΩ)
Fig. 17 - Switching Time vs. Load Resistance
For technical questions, contact: [email protected]
Document Number: 83726
Rev. 1.6, 10-Dec-10
TCET2600, TCET4600
Optocoupler, Phototransistor Output, Vishay Semiconductors
AC Input (Dual, Quad Channel)
PACKAGE DIMENSIONS in millimeters
Pin one ID
4
3
2
1
5
6
7
8
6.645 ± 0.165
ISO method A
9.77 ± 0.14
0.95 ± 0.19
7.62 typ.
0.79
4° typ.
3.555 ± 0.255
6.095 ± 0.255
1.27
10°
3.045 ± 0.255
0.70 ± 0.19
3° to 9°
0.51 ± 0.05
2.54 typ.
0.25 ± 0.05
i178006
Pin one ID
8
7
6
5
4
3
2
1
6.48
6.81
9
10
11
12
13
14
15
16
ISO method A
19.77
20.07
0.76
1.14
0.79
7.62 typ.
3.30
3.81
4°
0.46
0.56
0.51
0.89
2.54 typ.
1.27
10°
typ.
3° to 9°
2.79
3.30
5.84
6.35
0.20
0.30
i178007
PACKAGE MARKING
TCET2600
V YWW H 68
21764-94
Document Number: 83726
Rev. 1.6, 10-Dec-10
For technical questions, contact: [email protected]
www.vishay.com
7
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Revision: 02-Oct-12
1
Document Number: 91000