TCET2200 Datasheet

TCET2200
Vishay Semiconductors
Optocoupler, Phototransistor Output (Dual Channel)
FEATURES
• High common mode rejection
• CTR offered in 5 groups
• Low temperature coefficient of CTR
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
17197_6
V
D E
C
AGENCY APPROVALS
• UL1577, file no. E52744 system code H, double protection
15123-2
• cUL tested to CSA 22.2 bulletin 5A, double protection
DESCRIPTION
• DIN EN 60747-5-2 (VDE 0884)
The TCET2200 consists of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode in a
8 pin plastic dual inline package.
• DIN EN 60747-5-5 pending
• FIMKO
VDE STANDARDS
These couplers perform safety functions according to the
following equipment standards:
• DIN EN 60747-5-2 (VDE 0884)
Optocoupler for electrical safety requirements
• IEC 60950/EN 60950
Office machines (applied for reinforced isolation for mains
voltage ≤ 400 VRMS)
• VDE 0804
Telecommunication apparatus and data processing
• IEC 60065
Safety for mains-operated electronic and related
household apparatus
ORDERING INFORMATION
DIP
T
C
E
T
2
2
0
0
PART NUMBER
7.62 mm
CTR (%)
AGENCY CERTIFIED/PACKAGE
5 mA
UL, cUL, VDE, FIMKO
50 to 600
DIP-8
TCET2200
ABSOLUTE MAXIMUM RATINGS
PARAMETER
(1)
(Tamb = 25 °C, unless otherwise specified)
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6
V
Forward current
IF
60
mA
Forward surge current
Power dissipation
Junction temperature
Document Number: 81180
Rev. 1.1, 10-Dec-10
tp ≤ 10 μs
IFSM
1.5
A
Pdiss
70
mW
Tj
125
°C
For technical questions, contact: [email protected]
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1
TCET2200
Vishay Semiconductors Optocoupler, Phototransistor Output
(Dual Channel)
ABSOLUTE MAXIMUM RATINGS
(1)
(Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
7
V
mA
OUTPUT
Collector current
tp/T = 0.5, tp ≤ 10 ms
Collector peak current
Power dissipation
Junction temperature
IC
50
ICM
100
mA
Pdiss
70
mW
Tj
125
°C
VRMS
COUPLER
Isolation test voltage (RMS)
t=1s
VISO
5300
VIORM
890
VP
Total power dissipation
Ptot
200
mW
Operating ambient temperature range
Tamb
- 55 to + 100
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Tsld
260
°C
Isolation voltage
2 mm from case, t ≤ 10 s
Soldering temperature (2)
Notes
(1) Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices.
ELECTRICAL CHARACTERISTCS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
IF = 50 mA
VR = 0 V, f = 1 MHz
MIN.
TYP.
MAX.
VF
1.25
1.6
Cj
50
UNIT
INPUT
Forward voltage
Junction capacitance
V
pF
OUTPUT
Collector emitter voltage
IC = 1 mA
VCEO
70
V
Emitter collector voltage
IE = 100 μA
VECO
7
V
VCE = 20 V, IF = 0 A,
E=0
ICEO
Collector emitter saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100 Ω
fc
110
kHz
f = 1 MHz
Ck
0.6
pF
Collector emitter cut-off current
10
100
nA
0.3
V
COUPLER
Coupling capacitance
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
IC/IF
VCE = 5 V, IF = 5 mA
TCET2200
CTR
50
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2
For technical questions, contact: [email protected]
TYP.
MAX.
UNIT
600
%
Document Number: 81180
Rev. 1.1, 10-Dec-10
TCET2200
Optocoupler, Phototransistor Output Vishay Semiconductors
(Dual Channel)
MAXIMUM SAFETY RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF
275
mA
Pdiss
400
mW
VIOTM
10
kV
Tsi
175
°C
INPUT
Forward current
OUTPUT
Power dissipation
COUPLER
Rated impulse voltage
Safety temperature
Note
• According to DIN EN 60747-5-2 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
TEST CONDITION
SYMBOL
MIN.
Partial discharge test voltage routine test
PARAMETER
100 %, ttest = 1 s
Vpd
1.669
Partial discharge test voltage lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
VIOTM
10
kV
Vpd
1.424
kV
Ptot - Total Power Dissipation (mW)
Insulation resistance
MAX.
UNIT
kV
VIO = 500 V
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
VIO = 500 V, Tamb = 150 °C
(construction test only)
RIO
109
Ω
VIOTM
450
t1, t2
t3 , t4
ttest
tstres
400
Phototransistor
Psi (mW)
350
300
= 1 to 10 s
=1s
= 10 s
= 12 s
VPd
250
VIOWM
VIORM
200
IR-diode
Isi (mA)
150
100
50
0
t3 ttest t4
0
0
22441
TYP.
25
50
75
100
125
150
175
13930
t1
tTr = 60 s
Tsi - Safety Temperature (°C)
Fig. 1 - Derating Diagram
Document Number: 81180
Rev. 1.1, 10-Dec-10
t2
t stres
t
Fig. 2 - Test Pulse Diagram for Sample Test acc. to
DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5
For technical questions, contact: [email protected]
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3
TCET2200
Vishay Semiconductors Optocoupler, Phototransistor Output
(Dual Channel)
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Delay time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
td
3
μs
Rise time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
tr
3
μs
Fall time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
tf
4.7
μs
Storage time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
ts
0.3
μs
Turn-on time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
ton
6
μs
Turn-off time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
toff
5
μs
Turn-on time
VS = 5 V, IF = 10 mA, RL = 1 kΩ,
(see figure 4)
ton
9
μs
Turn-off time
VS = 5 V, IF = 10 mA, RL = 1 kΩ,
(see figure 4)
toff
10
μs
IF
IF
+5V
IF
0
0
I C = 2 mA; adjusted through
input amplitude
tp
IC
t
100 %
90 %
R G = 50 Ω
tp
= 0.01
T
t p = 50 µs
Channel I
Channel II
50 Ω
Oscilloscope
R L = 1 MΩ
C L = 20 pF
100 Ω
tr
td
t on
tp
td
tr
t on (= td + tr)
95 10804
Fig. 3 - Test Circuit, Non-Saturated Operation
IF
10 %
0
Pulse duration
Delay time
Rise time
Turn-on time
ts
tf
t off
ts
tf
t off (= ts + tf)
t
Storage time
Fall time
Turn-off time
96 11698
Fig. 5 - Switching Times
+5V
I F = 10 mA
0
IC
R G = 50 Ω
tp
= 0.01
T
t p = 50 µs
Channel I
Channel II
50 Ω
Oscilloscope
R L ≥ 1 MΩ
C L ≤ 20 pF
1 kΩ
95 10843
Fig. 4 - Test Circuit, Saturated Operation
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For technical questions, contact: [email protected]
Document Number: 81180
Rev. 1.1, 10-Dec-10
TCET2200
Optocoupler, Phototransistor Output Vishay Semiconductors
(Dual Channel)
Ptot - Total Power Dissipation (mW)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
160
10 000
Coupled device
120
100
80
60
40
Phototransistor
IR-diode
20
IF = 0 mA
ICE0 - Leakage Current (nA)
140
1000
100
20
40
60
80
100
0.01
0.001
- 60 - 40 - 20
40
60
80 100
30
IC - Collector Current (mA)
VF - Forward Voltage (V)
20
Fig. 9 - Leakage Current vs. Ambient Temperature
1.8
1.6
Tamb = 0 °C
Tamb = - 40 °C
1.4
Tamb = - 55 °C
1.2
Tamb = 25 °C
Tamb = 50 °C
Tamb = 75 °C
1.0
0.8
Tamb = 100 °C
25
IF = 25 mA
20
IF = 10 mA
15
10
IF = 5 mA
5
IF = 1 mA
IF = 2 mA
0
0.6
0.1
1
10
0
100
IF - Forward Current (mA)
22462
22464
Fig. 7 - Forward Current vs. Forward Voltage
0.1
0.2
0.3
0.4
VCE - Collector Emitter Voltage (sat) (V)
Fig. 10 - Collector Current vs. Collector Emitter Voltage (sat)
50
1.4
45
NCTR - Normalized CTR (NS)
IC - Collector Current (mA)
0
Tamb - Ambient Temperature (°C)
22465
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
IF = 30 mA
40
IF = 20 mA
35
30
IF = 15 mA
25
IF = 10 mA
20
15
IF = 5 mA
10
5
1.2
0
1
2
3
4
5
6
7
IF = 5 mA
0.8
0.6
Fig. 8 - Collector Current vs. Collector Emitter Voltage (NS)
Document Number: 81180
Rev. 1.1, 10-Dec-10
IF = 1 mA
0.4
0.2
0
- 60 - 40 - 20
8
VCE - Collector Emitter Voltage (NS) (V)
VCE = 5 V
IF = 10 mA
1.0
0
22463
VCE = 12 V
0.1
120
Tamb - Ambient Temperature (°C)
22442
VCE = 24V
1
0
0
VCE = 40 V
10
22466
0
20
40
60
80 100
Tamb - Ambient Temperature (°C)
Fig. 11 - Normalized CTR (NS) vs. Ambient Temperature
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5
TCET2200
Vishay Semiconductors Optocoupler, Phototransistor Output
(Dual Channel)
0
VCE = 0.4 V
IF = 5 mA
- 40
IF = 10 mA
0.8
0.6
IF = 1 mA
0.4
VCE = 5 V
- 20
1.0
Phase (deg)
NCTR - Normalized CTR (sat)
1.2
- 60
- 80
- 100
- 120
0.2
- 140
0
- 60 - 40 - 20
- 160
0
20
40
60
80 100
1
10
Fig. 12 - Normalized CTR (sat) vs. Ambient Temperature
1000
VCE = 5 V
VCC = 5 V
Tamb = 0 °C
1.2
Tamb = - 40 °C
1.0
Tamb = - 55 °C
0.8
0.6
Tamb = 25 °C
0.4
100
10
Tamb = 50 °C
Tamb = 75 °C
0.2
Tamb = 100 °C
1
0.0
0.1
1
10
0.1
100
IF - Forward Current (mA)
22468
Tamb = 0 °C
Tamb = - 40 °C
0.8 T = - 55 °C
amb
0.6
Tamb = 25 °C
0.4
Tamb = 50 °C
0.2
Tamb = 75 °C
Tamb = 100 °C
0.0
100
1000
ton, toff - Switching Time (μs)
VCE = 0.4 V
10
IC (mA)
Fig. 16 - FCTR vs. IC
1.2
1.0
1
22471
Fig. 13 - Normalized CTR (NS) vs. Forward Current
NCTR - Normalized CTR (sat)
1000
Fig. 15 - FCTR vs. Phase Angle
FCTR (kHz)
NCTR - Normalized CTR (NS)
1.4
100
f (kHz)
22470
Tamb - Ambient Temperature (°C)
22467
VCE = 5 V, IF = 10 mA
100
toff (μs)
10
ton (μs)
1
0.1
0.1
22469
1
10
100
IF - Forward Current (mA)
Fig. 14 - Normalized CTR (sat) vs. Forward Current
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6
0
22472
5
10
15
20
RL - Load Resistance (kΩ)
Fig. 17 - Switching Time vs. Load Resistance
For technical questions, contact: [email protected]
Document Number: 81180
Rev. 1.1, 10-Dec-10
TCET2200
Optocoupler, Phototransistor Output Vishay Semiconductors
(Dual Channel)
PACKAGE DIMENSIONS in millimeters
Pin one ID
4
3
2
1
5
6
7
8
6.645 ± 0.165
ISO method A
9.77 ± 0.14
0.95 ± 0.19
7.62 typ.
0.79
4° typ.
3.555 ± 0.255
6.095 ± 0.255
1.27
10°
0.70 ± 0.19
0.51 ± 0.05
3.045 ± 0.255
3° to 9°
2.54 typ.
0.25 ± 0.05
i178006
PACKAGE MARKING
TCET2200
V YWW H 68
21764-35
Document Number: 81180
Rev. 1.1, 10-Dec-10
For technical questions, contact: [email protected]
www.vishay.com
7
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 02-Oct-12
1
Document Number: 91000