ILD3/ ILQ3 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad Channel) Dual Channel Features • Current Transfer Ratio at IF = 1.6 mA • Double Molded Package Offers Isolation Test Voltage 5300 VRMS, 1.0 sec. A 1 8 E C 2 7 C C 3 6 C A 5 E 4 Agency Approvals • • • • UL - File No. E52744 System Code H or J CSA 93751 BSI IEC60950 IEC60965 FIMKO Quad Channel Description The ILD3/ ILQ3 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistors. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The ILD3/ ILQ3 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. Also these couplers can be used to replace relays and transformers in many digital interface applications such as CTR modulation. The ILD3 has two isolated channels in a single DIP package and the ILQ3 has four isolated channels per package. A 1 16 E C 2 15 C C 3 14 C A 4 13 E A 5 12 E C 6 11 C C 7 10 C A 8 9 E i179012 Order Information Part Remarks ILD3 CTR > 500 %, Dual Channel DIP-8 ILQ3 CTR > 500 %, Quad Channel DIP-16 For additional information on the available options refer to Option Information. Document Number 83655 Rev. 1.3, 19-Apr-04 www.vishay.com 1 ILD3/ ILQ3 VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse current Parameter Test condition VR 6.0 V Forward continuous current IF 60 mA Surge current IFSM 2.5 A Power dissipation Pdiss 100 mW 1.3 mW/°C Symbol Value Unit BVCEO 50 V Derate linearly from 25 °C Unit Output Parameter Test condition Collector-emitter breakdown voltage Collector current t < 1.0 ms Power dissipation IC 50 mA IC 400 mA Pdiss 200 mW 2.6 mW/°C Derate linearly from 25 °C Coupler Parameter Test condition Symbol Value Unit VISO 5300 VRMS Creepage ≥7 mm Clearance ≥7 mm Isolation test voltage (between t = 1 sec. emitter and detector, refer to standard climate 23°C/50% RH, DIN50014) Isolation resistance VIO = 500 V, Tamb = 25 °C RIO VIO = 500 V, Tamb = 100 °C 10 12 11 Ω Ω RIO 10 Ptot 250 mW 3.3 mW/°C Storage temperature range Tstg - 40 to + 150 °C Operating temperature range Tamb - 40 to + 100 °C Tj 100 °C Tsld 260 °C Power dissipation Derate linearly from 25 °C Junction temperature Soldering temperature www.vishay.com 2 2.0 mm case bottom Document Number 83655 Rev. 1.3, 19-Apr-04 ILD3/ ILQ3 VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Typ. Max Forward voltage Parameter IF = 60 mA Test condition VF 1.25 1.65 V Reverse current VR = 6.0 V IR 0.01 10 µA Capacitance VR = 0 V, f = 1.0 MHz 25 pF Rthjl 750 K/W Thermal resistance, junction to lead Symbol Min Unit Output Typ. Max Unit Collector-emitter leakage current Parameter VCE = 15 V Test condition ICEO 5.0 70 nA Collector-emitter capacitance VCE = 5.0 V, f = 1.0 MHz CCE 6.8 pF Rthjl 500 K/W Thermal resistance, junction to lead Symbol Min Coupler Parameter Capacitance (input-output) Test condition VIO = 0 V, f = 1.0 MHz Symbol Min Typ. CIO Max Unit 0.8 pF Current Transfer Ratio Part Symbol Min Saturated Current Transfer Ratio (ILD/Q3-1) Parameter IF = 1.6 mA, VCE = 0.4 V Test condition ILD3 CTRsat 300 Typ. Max Unit % Saturated Current Transfer Ratio (ILD/Q3-2) IF = 1.0 mA, VCE = 0.4 V ILD3 CTRsat 100 % Common Mode Transient Immunity Parameter Test condition Symbol Min Typ. Max Unit Common mode rejection output high VCM = 50 VP-P, RL = 10 KΩ, IF = 0 mA CMH 5000 V/µs Common mode rejection output low VCM = 50 VP-P, RL = 10 KΩ IF = 0 mA CML 5000 V/µs CCM 0.01 pF Common mode coupling capacitance Document Number 83655 Rev. 1.3, 19-Apr-04 www.vishay.com 3 ILD3/ ILQ3 VISHAY Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 4 3 2 1 5 6 7 8 .255 (6.48) .268 (6.81) ISO Method A .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4° typ. .300 (7.62) typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .020 (.51 ) .035 (.89 ) .100 (2.54) typ. .018 (.46) .022 (.56) i178006 .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) 10° 3°–9° .008 (.20) .012 (.30) Package Dimensions in Inches (mm) pin one ID 8 7 6 5 4 3 2 1 .255 (6.48) .265 (6.81) 9 10 11 12 13 14 15 16 ISO Method A .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) .300 (7.62) typ. .031(.79) .130 (3.30) .150 (3.81) 4° .018 (.46) .022 (.56) .020(.51) .035 (.89) .100 (2.54)typ. .050 (1.27) 10° typ. 3°–9° .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) i178007 www.vishay.com 4 Document Number 83655 Rev. 1.3, 19-Apr-04 ILD3/ ILQ3 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83655 Rev. 1.3, 19-Apr-04 www.vishay.com 5