TEMD5080X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: top view • Dimensions (L x W x H in mm): 5 x 4.24 x 1.12 • Radiant sensitive area (in mm2): 7.7 • AEC-Q101 qualified • Enhanced blue photo sensitivity: S (400 nm) rel > 30 % • Peak sensitivity at 940 nm • Suitable for visible and near infrared radiation 20535 • Low junction capacitance • Fast response times • Angle of half sensitivity: = ± 65° DESCRIPTION • Floor life: 72 h, MSL 4, acc. J-STD-020 TEMD5080X01 is a PIN photodiode with enhanced blue sensitivity. The miniature surface mount package (SMD) include a chip with 7.7 mm2 sensitive area, covered by clear epoxy. • Lead (Pb)-free reflow soldering • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS • High speed photo detector PRODUCT SUMMARY COMPONENT Ira (μA) (deg) 0.1 (nm) TEMD5080X01 60 ± 65 350 to 1100 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMD5080X01 Tape and reel MOQ: 1500 pcs, 1500 pcs/reel Top view Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb 25 °C SYMBOL VALUE VR 25 UNIT V PV 215 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 110 °C Tsd 260 °C RthJA 350 K/W Junction temperature Soldering temperature Thermal resistance junction/ambient Rev. 1.3, 23-Aug-11 Acc. reflow solder profile fig. 8 Document Number: 81643 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEMD5080X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 50 mA VF TYP. MAX. UNIT 1 1.3 IR = 100 μA, E = 0 V(BR) V VR = 10 V, E = 0 Iro 2 10 nA VR = 0 V, f = 1 MHz, E = 0 CD 90 VR = 3 V, f = 1 MHz, E = 0 CD 30 40 pF Forward voltage Breakdown voltage Reverse dark current Diode capacitance MIN. 25 V pF Open circuit voltage Ee = 1 mW/cm2, = 950 nm Vo 350 mV Temperature coefficient of Vo Ee = 1 mW/cm2, = 950 nm TKVo - 2.6 mV/K Short circuit current Ee = 1 mW/cm2, = 950 nm Ik 50 μA Temperature coefficient of Ik Ee = 1 mW/cm2, = 950 nm TKIk 0.1 %/K Ee = 1 mW/cm2, = 400 nm, VR = 5 V Ira 18 μA EV = 100 lx, CIE illuminant A, VR = 5 V Ira 8.5 μA Ee = 1 mW/cm2, = 950 nm, VR = 5 V Ira 60 μA CIE illuminant A TKIra 0.15 %/K = 950 nm Reverse light current Temperature coefficient of Ira TKIra 0.1 %/K Angle of half sensitivity ± 65 deg Wavelength of peak sensitivity p 940 nm Range of spectral bandwidth 0.1 350 to 1100 nm VR = 10 V, = 400 nm NEP 1.1 x 10-13 W/Hz Rise time VR = 5 V, RL = 50 , = 850 nm tr 40 ns Fall time VR = 5 V, RL = 50 , = 850 nm tf 40 ns Noise equivalent power BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) I ra rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8403 40 60 80 Tamb - Ambient Temperature (°C) VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 0 100 Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.3, 23-Aug-11 1.4 94 8409 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 81643 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEMD5080X01 www.vishay.com Vishay Semiconductors 0° 20° 1 VR = 5 V CIE illuminant A 1 10 20538 100 40° 1.0 0.9 50° 0.8 60° 1000 Ev - Illuminance (lx) 70° 0.7 ϕ - Angular Displacement 10 0.1 10° 30° Srel - Relative Radiant Sensitivity Ira - Photo Current (µA) 100 80° 0.6 0.4 0.2 0 94 8406 Fig. 3 - Reverse Light Current vs. Irradiance Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement 100 CD - Diode Capacitance (pF) 90 80 E=0 f = 1 MHz 70 60 50 40 30 20 10 0 0.1 1 10 100 VR - Reverse Voltage (V) 20539 S ( λ)rel - Relative Spectral Responsivity Fig. 4 - Diode Capacitance vs. Reverse Voltage 1.0 0.8 0.6 0.4 0.2 0 400 20540 500 600 700 800 900 1000 1100 λ - Wavelength (nm) Fig. 5 - Relative Spectral Sensitivity vs. Wavelength Rev. 1.3, 23-Aug-11 Document Number: 81643 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEMD5080X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Drawing-No.: 6.541-5060.01-4 Issue: 3; 05.02.08 Not indicated tolerances ± 0.1 20536 Rev. 1.3, 23-Aug-11 Document Number: 81643 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEMD5080X01 www.vishay.com Vishay Semiconductors TAPING DIMENSIONS in millimeters 20537 REEL DIMENSIONS in millimeters 20874 Rev. 1.3, 23-Aug-11 Document Number: 81643 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEMD5080X01 www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK 300 255 °C 240 °C 217 °C 250 Temperature (°C) max. 260 °C 245 °C 200 FLOOR LIFE max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D Rev. 1.3, 23-Aug-11 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: Moisture sensitivity: level 4 Floor life: 72 h Conditions: Tamb < 30 °C, RH < 60 % DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or recommended conditions: 192 h at 40 °C (+ 5 °C), RH < 5 % or 96 h at 60 °C (+ 5 °C), RH < 5 %. Document Number: 81643 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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