TESP5700 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions (L x W x H in mm): 4.5 x 5 x 6 • Radiant sensitive area (in mm2): 2.2 • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm emitters • High cut-off frequency at VR = 2 V: 35 MHz 16936 • Angle of half sensitivity: ϕ = ± 60° • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS DESCRIPTION • High speed data transmission specifically using low supply voltage TESP5700 PIN photodiode is applicable to high speed data transmission specifically at low reverse voltage. Black epoxy package include side view lens and daylight blocking filter, matched to high speed IR emitters. • High speed detector for infrared radiation • Infrared remote control and free air data transmissionsystems, e.g. in combination with TSFFxxxx series IR emitters PRODUCT SUMMARY Ira (µA) ϕ (deg) λ0.5 (nm) 25 ± 60 790 to 980 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view COMPONENT TESP5700 Note Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TESP5700 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION Reverse voltage Tamb ≤ 25 °C Power dissipation Junction temperature SYMBOL VALUE VR 60 UNIT V PV 215 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C t≤5s Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Document Number: 81573 Rev. 1.5, 08-Sep-08 For technical questions, contact: [email protected] www.vishay.com 513 TESP5700 Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL IF = 50 mA VF IR = 100 µA, E = 0 V(BR) Forward voltage Breakdown voltage Reverse dark current Diode capacitance MIN. TYP. MAX. 0.9 1.3 UNIT V 60 V VR = 10 V, E = 0 Iro 1 VR = 0 V, f = 1 MHz, E = 0 CD 17 10 nA pF VR = 2 V, f = 1 MHz RS 40 Ω Open circuit voltage Ee = 1 mW/cm2, λ = 870 nm Vo 430 mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 870 nm TKVo - 2.6 mV/K Short circuit current Ee = 1 mW/cm2, λ = 870 nm Ik 23 µA Reverse light current Ee = 1 mW/cm2, λ = 870 nm, VR = 2 V Ira 25 µA Temperature coefficient of Ira Ee = 1 mW/cm2, λ = 870 nm, VR = 2 V TKIra 0.13 %/K VR = 2 V, λ = 870 nm s(λ) 0.57 A/W VR = 5 V, λ = 950 nm s(λ) 0.37 A/W Angle of half sensitivity ϕ ± 60 deg Wavelength of peak sensitivity λp 870 nm Serial resistance Absolute spectral sensitivity 16 λ0.5 790 to 980 nm Rise time VR = 2 V, RL = 50 Ω, λ = 870 nm tr 10 ns Fall time VR = 2 V, RL = 50 Ω, λ = 870 nm tf 10 ns Cut-off frequency VR = 2 V, RL = 50 Ω, λ = 870 nm fc 4 MHz Range of spectral bandwidth Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified I ra rel - Relative Reverse Light Current I ro - Reverse Dark Current ( nA) 1000 100 10 VR = 10 V 1 20 16931 40 60 80 Tamb - Ambient Temperature (°C) VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 100 Fig. 1 - Reverse Dark Current vs. Ambient Temperature www.vishay.com 514 1.4 0 94 8409 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature For technical questions, contact: [email protected] Document Number: 81573 Rev. 1.5, 08-Sep-08 TESP5700 Silicon PIN Photodiode, RoHS Compliant ) rel - Relative Spectral Sensitivity 100 10 VR = 2 V = 870 nm S( 1 0.1 0.01 0.1 10 1 Ee - Irradiance ( mW/cm2 ) 16932 1.2 1.0 0.8 0.6 0.4 0.2 0.0 750 850 Fig. 3 - Reverse Light Current vs. Irradiance 950 1150 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 0° 100 10 ° 20 ° 30° = 870 nm 1 mW/cm2 Srel - Relative Sensitivity I ra - Reverse Light Current ( A) 1050 - Wavelenght (nm) 16935 10 0.1 mW/cm2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement I ra -Reverse Light Current ( A) 1000 Vishay Semiconductors 80° 1 0.1 11 0 100 VR - Reverse Voltage (V) 16933 0.6 0.4 0.2 0 94 8413 Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement 40 CD - Diode Capacitance (pF) 35 E=0 f = 1 MHz 30 25 20 15 10 5 0 0.1 16934 1.0 10.0 VR - Reverse Voltage (V) 100.0 Fig. 5 - Diode Capacitance vs. Reverse Voltage Document Number: 81573 Rev. 1.5, 08-Sep-08 For technical questions, contact: [email protected] www.vishay.com 515 TESP5700 Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 5 ± 0.15 3.2 ± 0.2 (2.4) ± 0.2 ± 0.3 6 R 2.25 (sphere) 18.8 ± 0.5 8.6 ± 0.3 < 0.7 2.5 4.5 + 0.1 - 0.3 0.65 + 0.1 - 0.2 0.1 3.4 +- 0.3 Area not plane A C 0.45 + 0.2 - 0.1 2.54 nom. 0.4 + 0.15 1.1 ± 0.2 technical drawings according to DIN specifications Drawing-No.: 6.544-5199.01-4 Issue: 2; 19.06.01 95 11475 www.vishay.com 516 For technical questions, contact: [email protected] Document Number: 81573 Rev. 1.5, 08-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1