VEMD10940F Datasheet

VEMD10940F
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: Surface mount
• Package form: Side view
• Dimensions (L x W x H in mm): 3 x 2 x 1
• High radiant sensitivity
• Daylight blocking filter matched with 830 nm
to 950 nm IR emitters
• Fast response times
• Angle of half sensitivity:  = ± 75°
• Package matched with IR emitter VSMB10940
and VSMG10850
• Floor life: 168 h, MSL 3, according to J-STD-020
DESCRIPTION
• Lead (Pb)-free reflow soldering
VEMD10940F is a high speed and high sensitive PIN
photodiode in a miniature side looking, surface mount
package (SMD) with daylight blocking filter. Filter is matched
with IR emitters operating at wavelength of 830 nm to 950
nm. The photo sensitive area of the chip is 0.23 mm2.
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed photo detector
• Infrared remote control
• Infrared data transmission
• Photo interrupters
• IR touch panels
PRODUCT SUMMARY
COMPONENT
Ira (μA)
 (deg)
0.5 (nm)
VEMD10940F
3
± 75
780 to 1050
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VEMD10940F
Tape and reel
MOQ: 3000 pcs, 3000 pcs/reel
Side view
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
Tamb 25 °C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.1, 27-Mar-13
SYMBOL
VALUE
VR
60
UNIT
V
PV
104
mW
Tj
100
°C
Tamb
- 40 to + 100
°C
Tstg
- 40 to + 100
°C
Acc. reflow solder profile fig. 7
Tsd
260
°C
Acc. J-STD-051
RthJA
450
K/W
Document Number: 84171
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD10940F
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
IF = 50 mA
VF
IR = 100 μA, E = 0
V(BR)
VR = 10 V, E = 0
Iro
Forward voltage
Breakdown voltage
Reverse dark current
TYP.
MAX.
UNIT
1
V
32
V
1
10
nA
VR = 0 V, f = 1 MHz, E = 0
CD
4
VR = 5 V, f = 1 MHz, E = 0
CD
1.3
pF
Ee = 1 mW/cm2,  = 950 nm
Vo
350
mV
mV/K
Diode capacitance
Open circuit voltage
MIN.
pF
Temperature coefficient of Vo
Ee = 1 mW/cm2,  = 950 nm
TKVo
- 2.6
Short circuit current
Ee = 1 mW/cm2,  = 950 nm
Ik
3
μA
Temperature coefficient of Ik
Ee = 1 mW/cm2,  = 950 nm
TKIk
0.1
%/K
Ee = 1 mW/cm2,  = 950 nm, VR = 5 V
Ira
Reverse light current
2
3

Angle of half sensitivity
4
μA
± 75
deg
Wavelength of peak sensitivity
p
920
nm
Range of spectral bandwidth
0.5
780 to 1050
nm
Rise time
VR = 10 V, RL = 1 k,  = 820 nm
tr
100
ns
Fall time
VR = 10 V, RL = 1 k,  = 820 nm
tf
100
ns
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100
Ira - Reverse Light Current (µA)
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 10 V
1
20
94 8427
40
60
1
0.1
1
10
Ee - Irradiance (mW/cm2)
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 3 - Reverse Light Current vs. Irradiance
8
1.4
CD - Diode Capacitance (pF)
Ira, rel - Relative Reverse Light Current
10
0.1
0.01
100
80
VR = 5 V
λ = 950 nm
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
6
E=0
f = 1 MHz
4
2
0
0.6
0
94 8416
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.1, 27-Mar-13
0.1
94 8430
1
10
100
VR- Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Document Number: 84171
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD10940F
www.vishay.com
Vishay Semiconductors
0°
20°
80
70
60
50
40
30
20
10
700
800
900
1000
vertical
horizontal
40°
1.0
0.9
50°
0.8
60°
70°
0.7
1100
ϕ - Angular Displacement
90
0
600
10°
30°
Ie, rel - Relative Radiant Sensitivity
S (λ)rel - Relative Spectral Sensitivity
100
80°
0.6
0.4
0.2
0
λ - Wavelength (nm)
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
REFLOW SOLDER PROFILE
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 3, acc. to J-STD-020.
DRYING
Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D
Rev. 1.1, 27-Mar-13
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Document Number: 84171
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD10940F
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: VEMD10940F
Recommended Solder Pad Footprint
22701
Rev. 1.1, 27-Mar-13
Document Number: 84171
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD10940F
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VEMD10940F
22667
22668
Rev. 1.1, 27-Mar-13
Document Number: 84171
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000