VSMB10940 Datasheet

VSMB10940
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
FEATURES
• Package type: Surface mount
• Package form: Side view
• Dimensions (L x W x H in mm): 3 x 2 x 1
• Peak wavelength: p = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• High speed
• Angle of half sensitivity:  = ± 75°
• Low forward voltage
DESCRIPTION
• Package matches with detector VEMD10940F
VSMB10940 is an infrared, 940 nm side looking emitting
diode in GaAlAs multi quantum well (MQW) technology with
high radiant power and high speed, molded in clear,
untinted plastic package (with lens) for surface mounting
(SMD).
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• IR touch panel
• High power emitter for low space applications
• High performance transmissive or reflective sensors
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr), 20 mA
 (deg)
p (nm)
tr (ns)
1
± 75
940
15
VSMB10940
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMB10940
Tape and reel
MOQ: 3000 pcs, 3000 pcs/reel
side view
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
SYMBOL
VALUE
Reverse voltage
PARAMETER
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
65
mA
mA
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
130
Surge forward current
tp = 100 μs
IFSM
500
mA
Power dissipation
PV
104
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
according to fig. 9, J-STD-020
Tsd
260
°C
J-STD-051, leads 7 mm, soldered on PCB
RthJA
450
K/W
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.1, 02-May-13
Document Number: 84170
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB10940
Vishay Semiconductors
120
70
100
60
IF - Forward Current (mA)
PV - Power Dissipation (mW)
www.vishay.com
80
RthJA = 450 K/W
60
40
20
0
50
RthJA = 450 K/W
40
30
20
10
0
10
20
30
40
50
60
70
80
0
90 100
0
Tamb - Ambient Temperature (°C)
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
IF = 20 mA, tp = 20 ms
VF
1.1
1.3
1.5
IF = 65 mA, tp = 20 ms
VF
1.35
UNIT
V
V
IF = 500 mA, tp = 100 μs
VF
1.8
V
IF = 1 mA
TKVF
- 1.5
mV/K
VR = 5 V
IR
VR = 0 V, f = 1 MHz,
E = 0 mW/cm2
CJ
IF = 20 mA, tp = 20 ms
Ie
IF = 65 mA, tp = 20 ms
Ie
3.05
mW/sr
IF = 500 mA, tp = 100 μs
Ie
13
mW/sr
IF = 100 mA, tp = 20 ms
e
35
mW
IF = 100 mA
TKe
- 0.47
%/K
Angle of half intensity - horizontal
h
± 77.5
deg
Angle of half intensity - vertical
v
± 72.5
deg
nm
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of radiant power
10
21
0.5
1
μA
pF
1.5
mW/sr
Peak wavelength
IF = 30 mA
p
940
Spectral bandwidth
IF = 30 mA

25
nm
Temperature coefficient of p
IF = 30 mA
TKp
0.3
nm
Rise time
IF = 100 mA, 20 % to 80 %
tr
15
ns
Fall time
IF = 100 mA, 20 % to 80 %
tf
15
ns
Rev. 1.1, 02-May-13
Document Number: 84170
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB10940
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Ie, rel - Relative Radiant Intensity (%)
0.1
tp = 100 µs
0.01
160
IF = 100 mA
140
120
100
80
60
0.001
0.5
0.7
0.9
1.1
1.3
1.5
1.9
1.7
- 60 - 40 - 20
VF - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
40
80
60
100
Φe rel - Relative Radiant Power (%)
100
108
106
104
102
IF = 100 mA
100
IF = 10 mA
98
tp = 20 ms
96
94
IF = 1 mA
92
90
- 40
- 20
0
20
40
60
80
70
60
50
40
30
20
10
0
840
100
Tamb - Ambient Temperature (°C)
21443
IF = 30 mA
80
90
880
920
960
1000
1040
λ - Wavelength (nm)
21445
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 7 - Relative Radiant Power vs. Wavelength
0°
1000
10°
20°
30°
Ie, rel - Relative Radiant Intensity
Ie - Radiant Intensity (mW/sr)
20
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
110
VF, rel - Relative Forward Voltage (%)
0
Tamb - Ambient Temperature (°C)
tp = 100 µs
100
10
1
0.1
0.01
0.001
0.01
0.1
1
vertical
horizontal
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
IF - Forward Current (A)
1
80°
0.6
0.4
0.2
0
IF - Forward Current (A)
Fig. 5 - Radiant Intensity vs. Forward Current
Rev. 1.1, 02-May-13
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 84170
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB10940
www.vishay.com
REFLOW SOLDER PROFILE
Vishay Semiconductors
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 3
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
DRYING
Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS in millimeters
Recommended Solder Pad Footprint
22701
Rev. 1.1, 02-May-13
Document Number: 84170
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB10940
www.vishay.com
Vishay Semiconductors
BLISTER TAPE DIMENSIONS in millimeters
22667
REEL DIMENSIONS in millimeters
22668
Rev. 1.1, 02-May-13
Document Number: 84170
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Revision: 02-Oct-12
1
Document Number: 91000