VSMG10850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH FEATURES • Package type: Surface mount • Package form: Side view • Dimensions (L x W x H in mm): 3 x 2 x 1 • Peak wavelength: p = 850 nm • High reliability • High radiant power • High radiant intensity • High speed • Angle of half sensitivity: = ± 75° • Low forward voltage DESCRIPTION • Package matches with detector VEMD10940F VSMG10850 is an infrared, 850 nm side looking emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in clear, untinted plastic package for surface mounting (SMD). • Floor life: 168 h, MSL 3, acclording to J-STD-020 • Lead (Pb)-free reflow soldering • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • IR touch panel • High power emitter for low space applications • High performance transmissive or reflective sensors PRODUCT SUMMARY COMPONENT Ie (mW/sr), 20 mA (deg) p (nm) tr (ns) 1 ± 75 850 15 VSMG10850 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMG10850 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel side view Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Reverse voltage PARAMETER TEST CONDITION VR 5 UNIT V Forward current IF 65 mA mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 130 Surge forward current tp = 100 μs IFSM 500 mA Power dissipation PV 110 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C according to fig. 9, J-STD-020 Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 450 K/W Soldering temperature Thermal resistance junction/ambient Rev. 1.3, 28-May-13 Document Number: 84172 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMG10850 Vishay Semiconductors 120 70 100 60 IF - Forward Current (mA) PV - Power Dissipation (mW) www.vishay.com 80 RthJA = 450 K/W 60 40 20 0 50 RthJA = 450 K/W 40 30 20 10 0 10 20 30 40 50 60 70 80 0 90 100 0 Tamb - Ambient Temperature (°C) 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 20 mA, tp = 20 ms VF 1.1 1.4 1.65 IF = 65 mA, tp = 20 ms VF 1.45 UNIT V V IF = 500 mA, tp = 100 μs VF 1.9 V IF = 1 mA TKVF - 1.8 mV/K VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ IF = 20 mA, tp = 20 ms Ie IF = 65 mA, tp = 20 ms Ie 3.25 mW/sr IF = 500 mA, tp = 100 μs Ie 24 mW/sr IF = 100 mA, tp = 20 ms e 40 mW IF = 1 mA TKe - 1.1 %/K Angle of half intensity - horizontal h ± 77.5 deg Angle of half intensity - vertical v ± 72.5 deg nm Junction capacitance Radiant intensity Radiant power Temperature coefficient of radiant power 10 45 0.6 1 μA pF 1.8 mW/sr Peak wavelength IF = 30 mA p 850 Spectral bandwidth IF = 30 mA 40 nm Temperature coefficient of p IF = 30 mA TKp 0.25 nm Rise time IF = 100 mA, 20 % to 80 % tr 20 ns Fall time IF = 100 mA, 20 % to 80 % tf 20 ns Rev. 1.3, 28-May-13 Document Number: 84172 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMG10850 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ie, rel - Relative Radiant Intensity (%) 1 0.1 0.01 IF = 100 mA 140 120 100 80 60 0.001 0.5 0.75 1.0 1.25 1.5 2.0 1.75 - 60 - 40 - 20 VF - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage 40 80 60 100 1.25 Φe, rel - Relative Radiant Power 108 106 104 102 IF = 100 mA 100 IF = 10 mA 98 tp = 20 ms 96 94 IF = 1 mA 92 1.0 0.75 0.5 0.25 0 90 - 40 - 20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 21443 800 850 Fig. 7 - Relative Radiant Power vs. Wavelength 0° 1000 10° 20° 30° Ie, rel - Relative Radiant Intensity 100 900 λ- Wavelength (nm) 16972 Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Ie - Radiant Intensity (mW/sr) 20 Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature 110 VF, rel - Relative Forward Voltage (%) 0 Tamb - Ambient Temperature (°C) tp = 100 µs 10 1 0.1 0.01 0.001 0.01 0.1 1 vertical horizontal 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement IF - Forward Current (mA) tp = 100 µs 160 80° 0.6 0.4 0.2 0 IF - Forward Current (A) Fig. 5 - Radiant Intensity vs. Forward Current Rev. 1.3, 28-May-13 Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 84172 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMG10850 www.vishay.com REFLOW SOLDER PROFILE Vishay Semiconductors DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: Moisture sensitivity: level 3 Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % DRYING Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. PACKAGE DIMENSIONS in millimeters Recommended Solder Pad Footprint 22701 Rev. 1.3, 28-May-13 Document Number: 84172 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMG10850 www.vishay.com Vishay Semiconductors BLISTER TAPE DIMENSIONS in millimeters 22667 REEL DIMENSIONS in millimeters 22668 Rev. 1.3, 28-May-13 Document Number: 84172 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000