PAM8014 3.2W MONO CLASS D AUDIO AMPLIFIER Description Pin Assignments NEW PRODUCT The PAM8014 is a 3.2W mono filter-less class-D amplifier with high PSRR and differential input that eliminate noise and RF rectification. Features like greater than 90% efficiency and small PCB area make the PAM8014 Class-D amplifier ideal for portable applications. The output uses a filter-less architecture minimizing the number of external components and PCB area whilst providing a high performance, simple and lower cost system. (Top View) The PAM8014 features short circuit protection and thermal shutdown. The PAM8014 is available in U-WLB1313-9 package. GND OUT- A1 A2 A3 VDD PVDD B1 B2 IN- SD OUT+ C1 C2 C3 PGND B3 U-WLB1313-9 Features Ultra Low EMI, -20dB Better Than FCC Class-B @ 300MHz High Efficiency up to 93% @2W with a 8Ω Speaker Shutdown Current <1μA 3.2W@10% THD Output with a 4Ω Load at 5V Supply Demanding Few External Components Superior Low Noise without Input Supply Voltage from 2.5V to 5.5 V Short Circuit Protection Thermal Shutdown Available in Space Saving U-WLB1313-9 Package Totally Lead-Free&Fully RoHS Compliant (Notes 1& 2) Halogen and Antimony Free. “Green” Device (Note 3) Notes: IN+ Applications Cellular Phones/Smart Phones MP4/MP3 VOIP Digital Photo Frame Electronic Dictionary Portable Game Machines 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Typical Applications Circuit VDD 1µF PVDD VDD 0.1µF IN+ OUT+ Audio Input INOUT- 0.1µF Shut Down SD PGND PAM8014 Document number: DS38114 Rev. 1 - 2 GND 1 of 9 www.diodes.com January 2016 © Diodes Incorporated Pin Descriptions NEW PRODUCT Pin Number Pin Name Function A1 IN+ A2 GND Positive Differential Input Ground A3 OUT- Negative BTL Output B1 VDD Power Supply B2 PVDD Power Supply B3 PGND Power Ground C1 IN- Negative Differential Input C2 EN Chip Enable C3 OUT+ Positive BTL Output Functional Block Diagram VDD RF IN+ RIN + RIN IN- PWM Modulator - PVDD Gate Drive OUT+ Gate Drive OUT- RF EN EN Bias and Vref OSC UVLO SC Protect Startup Protection OTP PGND GND Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol VDD Parameter Value Unit 6.0 V -0.3 to VDD+0.3 V -65 to +150 °C +150 °C Supply Voltage (VDD) VI Input Voltage (IN+, IN-, EN) TS Storage Temperature TJ Maximum Junction Temperature Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Symbol Min Max Supply Voltage 2.5 5.5 V TA Operating Ambient Temperature Range -25 +85 °C TJ Junction Temperature -40 +125 °C VDD Parameter PAM8014 Document number: DS38114 Rev. 1 - 2 2 of 9 www.diodes.com Unit January 2016 © Diodes Incorporated Electrical Characteristics (@TA = +25°C, VDD = 5V, RIN = 0, Gain=18dB, RL = L(33μH)+R+L(33μH), unless otherwise specified.) Symbol VDD Parameter Test Conditions Min Typ Max Unit — 2.5 — 5.5 V VDD = 5.0V — 3.2 — VDD = 3.6V — 1.6 — VDD = 5.0V — 2.45 — VDD = 3.6V — 1.3 — VDD = 5.0V — 1.8 — VDD = 3.6V — 0.95 — VDD = 5.0V — 1.40 — VDD = 3.6V — 0.72 — — 0.17 — — 0.16 — — 0.14 — — 0.16 — Supply Voltage THD+N = 10%, f = 1kHz, R = 4Ω THD+N = 1%, f = 1kHz, R = 4Ω PO Output Power NEW PRODUCT THD+N = 10%, f = 1kHz, R = 8Ω THD+N = 1%, f = 1kHz, R = 8Ω VDD = 5.0V, PO = 1W, R = 8Ω THD+N Total Harmonic Distortion Plus Noise VDD = 3.6V, PO = 0.1W, R = 8Ω VDD = 5.0V, PO = 0.5W, R = 4Ω VDD = 3.6V, PO = 0.2W, R = 4Ω PSRR Dyn VN f = 1kHz f = 1kHz W W W W % % Power Supply Ripple Rejection VDD = 3.6V, Input AC-ground with C = 1μF f = 217Hz f = 1kHz — — -75 -75 — — dB Dynamic Range VDD = 5V, THD = 1%, R = 8Ω f = 1kHz — 95 — dB Input AC-ground No A weighting A-weighting — 60 — — 40 — — 93 — — 86 — Output Noise RL = 8Ω, THD = 10% μV η Efficiency IQ Quiescent Current VDD = 5V No Load — 4 — ISD Shutdown Current VDD = 2.5V to 5V SD = 0V — — 1 μA RDS(ON) Static Drain-to-Source On-State Resistor High Side PMOS, I = 500mA VDD = 5.0V — 200 — mΩ Low Side NMOS, I = 500mA VDD = 5.0V — 200 — mΩ fSW Switching Frequency VDD = 2.5V to 5.5V — — 250 — kHz Gv Closed-Loop Gain VDD = 2.5V to 5.5V — — 8 — V/V RIN Input Impedance (In Chip) VDD = 2.5V to 5.5V — — 31 — KΩ tON Turn-on Time VDD = 2.5V to 5.5V — — 32 — ms VDD = 2.5V to 5.5V — — +150 — VDD = 2.5V to 5.5V — — +40 — OTP OTH Over Temperature Protection Over Temperature Hysterisis f = 1kHz RL = 4Ω, THD = 10% Output Offset Voltage Input AC-ground, VDD = 5V — — — 20 VIH EN Input High Voltage VDD = 5V — 1.4 — — VIL EN Input Low Voltage VDD = 5V — — — 1.0 Document number: DS38114 Rev. 1 - 2 mA ℃ VOS PAM8014 % 3 of 9 www.diodes.com mV V January 2016 © Diodes Incorporated Performance Characteristics (@TA = +25°C, VDD = 5V, RIN = 0, Gain = 18dB, RL = L(33μH)+R+L(33μH), unless otherwise specified.) THD+N vs. Output Power (VDD=5V, RL=4Ω) THD+N vs. Output Power (VDD=5V, RL=8Ω) 60 60 f=100Hz /1KHz/10KHz Red/Blue/Pink 20 NEW PRODUCT 10 20 f=100Hz /1KHz/10KHz Red/Blue/Pink 10 5 5 2 2 1 1 % % 0.5 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 1m 2m 5m 10m 20m 50m 100m 200m 500m 1 2 0.01 1m 5 2m 5m 10m 20m 50m W THD+N vs. Output Power (VDD=3.6V, RL=4Ω) 200m 500m 1 2 3 2 3 THD+N vs. Output Power (VDD=3.6V, RL=8Ω) 60 60 f=100Hz /1KHz/10KHz Red/Blue/Pink 20 10 20 10 f=100Hz /1KHz/10KHz Red/Blue/Pink 5 5 2 2 1 1 % % 0.5 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 1m 2m 5m 10m 20m 50m 100m 200m 500m 1 2 0.01 1m 5 2m 5m 10m 20m 50m THD+N vs. Frequency (VDD=5.0V, RL=4Ω) 500m 1 10 5 5 PO=0.5W /1W/2W Red/Blue/Pink 2 1 PO=0.3W /0.5W/1W Red/Blue/Pink 1 0.5 0.5 % 0.2 0.2 0.1 0.1 0.05 0.05 0.02 20 200m THD+N vs. Frequency (VDD=5.0V, RL=8Ω) 10 2 100m W W % 100m W 50 100 200 500 1k 2k 5k 10k 20k 0.02 20 Hz PAM8014 Document number: DS38114 Rev. 1 - 2 50 100 200 500 1k 2k 5k 10k 20k Hz 4 of 9 www.diodes.com January 2016 © Diodes Incorporated Performance Characteristics (@TA = +25°C, VDD = 5V, RIN = 0, Gain = 18dB, RL = L(33μH)+R+L(33μH), unless otherwise specified.) PSRR vs. Frequency (VDD=5.0V, RL=8Ω) +0 +0 -10 -10 -20 -20 -30 -30 -40 d B -40 d B -50 -50 -60 -60 -70 -70 -80 -80 -90 -90 -100 20 -100 20 50 100 200 500 1k 2k 5k 10k 20k 50 100 200 500 Hz 1k 2k 5k 10k 20k Hz Frequency Response Noise Floor +20 +0 +19.75 -10 +19.5 CIN=1μF +19.25 -20 +19 -30 +18.75 +18.5 -40 +18.25 +18 d B r A +17.75 +17.5 +17.25 d B r -50 A -70 -60 +17 -80 +16.75 +16.5 -90 +16.25 -100 +16 +15.75 -110 +15.5 +15.25 -120 20 +15 20 50 100 200 500 1k 2k 5k 10k 50 100 200 500 1k 2k 5k 10k 20k Hz 20k Hz Efficiency vs. Output Power (VDD=5.0V, RL=4Ω) Efficiency vs. Output Power (VDD=5.0V, RL=8Ω) 100 100 90 80 70 60 % 50 40 30 20 10 0 80 60 % 40 20 1800 1500 1300 1000 800 500 300 200 150 100 300 500 700 1000 1300 2000 3000 100 50 80 10 50 0 10 NEW PRODUCT PSRR vs. Frequency (VDD=5.0V, RL=4Ω) Output Power--mW Output Power--mW PAM8014 Document number: DS38114 Rev. 1 - 2 5 of 9 www.diodes.com January 2016 © Diodes Incorporated Application Information Close Loop Gain (GV) The close loop gain is set by the ratio of the input resistance RIN and feedback resistance RF(refer to block diagram), and the close loop gain equation is as follow: Which RF is set at 124KΩ and RIN is 31KΩ, the GV default is 8V/V, which is 18dB. NEW PRODUCT Input Capacitors (CIN) In the typical application, an input capacitor, CIN, is required to allow the amplifier to bias the input signal to the proper DC level for optimum operation. In this case, CIN and the input impedance RIN form is a high-pass filter with the corner frequency determined in the follow equation: It is important to consider the value of CIN as it directly affects the low frequency performance of the circuit. For example, when R IN is 31kΩ and the specification calls for a flat bass response are down to 150Hz. Equation is reconfigured as followed: When input resistance variation is considered, the CIN is 7nF, so one would likely choose a value of 10nF. A further consideration for this capacitor is the leakage path from the input source through the input network CIN, RIN and feedback resistor RF to the load. This leakage current creates a DC offset voltage at the input to the amplifier that reduces useful headroom, especially in high gain applications. For this reason, a low-leakage tantalum or ceramic capacitor is the best choice. When polarized capacitors are used, the positive side of the capacitor should face the amplifier input in most applications as the DC level is held at V DD/2, which is likely higher than the source DC level. Please note that it is important to confirm the capacitor polarity in the application. Decoupling Capacitor (CS) The PAM8014 is a high-performance CMOS audio amplifier that requires adequate power supply decoupling to ensure the output total harmonic distortion (THD) as low as possible. Power supply decoupling also prevents the oscillations causing by long lead length between the amplifier and the speaker. The optimum decoupling is achieved by using two different types of capacitors that target on different types of noise on the power supply leads. For higher frequency transients, spikes, or digital hash on the line, a good low equivalent-series-resistance (ESR) ceramic capacitor, typically 1μF, is placed as close as possible to the device VDD pin for the best operation. For filtering lower frequency noise signals, a large ceramic capacitor of 10μF or greater placed near the audio power amplifier is recommended. How to Reduce EMI Most applications require a ferrite bead filter for EMI elimination shown at Figure 1. The ferrite filter reduces EMI around 1MHz and higher. When selecting a ferrite bead, choose one with high impedance at high frequencies, but low impedance at low frequencies. Ferrite Bead OUT+ 200pF Ferrite Bead OUT- 200pF Figure 1. Ferrite Bead Filter to Reduce EMI PAM8014 Document number: DS38114 Rev. 1 - 2 6 of 9 www.diodes.com January 2016 © Diodes Incorporated Application Information (Cont.) Shutdown Operation In order to reduce power consumption while not in use, the PAM8014 contains shutdown circuitry amplifier off when logic low is placed on the EN pin. By switching the shutdown pin connected to GND, the PAM8014 supply current draw will be minimized in idle mode. Under Voltage Lock-out (UVLO) The PAM8014 incorporates circuitry designed to detect low supply voltage. When the supply voltage drops to 2.0V or below, the PAM8014 goes into a state of shutdown, and the device comes out of its shutdown state and restore to normal function only when V DD higher than 2.2V. NEW PRODUCT Short Circuit Protection (SCP) The PAM8014 has short circuit protection circuitry on the outputs to prevent the device from damage when output-to-output shorts or output-toGND shorts occur. When a short circuit occurs, the device immediately goes into shutdown state. Once the short is removed, the device will be reactivated. Over Temperature Protection (OTP) Thermal protection on the PAM8014 prevents the device from damage when the internal die temperature exceeds +150°C. There is a +15°C tolerance on this trip point from device to device. Once the die temperature exceeds the set point, the device will enter the shutdown state and the outputs are disabled. This is not a latched fault. The thermal fault is cleared once the temperature of the die decreased by +40°C. This large hysteresis will prevent motor boating sound well and the device begins normal operation at this point with no external system interaction. POP and Click Circuitry The PAM8014 contains circuitry to minimize turn-on and turn-off transients or “click and pops”, where turn-on refers to either power supply turn-on or device recover from shutdown mode. When the device is turned on, the amplifiers are internally muted. An internal current source ramps up the internal reference voltage. The device will remain in mute mode until the reference voltage reach half supply voltage, 1/2 V DD. As soon as the reference voltage is stable, the device will begin full operation. For the best power-off pop performance, the amplifier should be set in shutdown mode prior to removing the power supply voltage. Ordering Information (Note 4) PAM8014 X X X Note: Pin Configuration Package Packing A: 9 Pin Z: U-WLB1313-9 R: Tape & Reel Part Number Package PAM8014AZR U-WLB1313-9 7” Tape and Reel Quantity Part Number Suffix 3000/Tape & Reel -7 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. PAM8014 Document number: DS38114 Rev. 1 - 2 7 of 9 www.diodes.com January 2016 © Diodes Incorporated Marking Information NEW PRODUCT PAM8014- U-WLB1313-9 BJ: Product Code Y: Year 0~9 W: Week: A~Z: 1~26 weeks; a~z: 27~52 weeks; z represents 52 and 53 weeks. Package Outline Dimensions Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. U-WLB1313-9 D 9x-Ø b Da Pin #1 ID U-WLB1313-9 Ea E e e A2 A1 Dim Min Max Typ A 0.500 0.600 0.550 A1 0.185 0.235 0.210 A2 0.315 0.365 0.340 b 0.208 0.308 0.258 D 1.240 --Da 0.750 0.850 0.800 E 1.240 --Ea 0.750 0.850 0.800 e 0.400 BSC All Dimensions in mm A SEATING PLANE PAM8014 Document number: DS38114 Rev. 1 - 2 8 of 9 www.diodes.com January 2016 © Diodes Incorporated Suggested Pad Layout Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. U-WLB1313-9 D (9x) C1 NEW PRODUCT Dimensions C C1 C2 D C2 Value (in mm) 0.400 0.800 0.800 0.258 C C IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2016 Diodes Incorporated www.diodes.com PAM8014 Document number: DS38114 Rev. 1 - 2 9 of 9 www.diodes.com January 2016 © Diodes Incorporated