elm14354aa

Single N-channel MOSFET
ELM14354AA-N
■General description
■Features
ELM14354AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=30V
Id=23A (Vgs=10V)
Rds(on) < 3.7mΩ (Vgs=10V)
Rds(on) < 5.3mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Gate-source voltage
Vds
Vgs
Ta=25°C
Continuous drain current
Ta=100°C
Pulsed drain current
Avalanche current
Repetitive avalanche energy
Vds Spike
Power dissipation
30
±20
23
Id
Idm
Ias
14
174
37
L=0.1mH
Eas
100ns
Tc=25°C
Vspike
Tc=100°C
Junction and storage temperature range
Pd
Tj, Tstg
V
V
A
A
A
3
3
68
mJ
3
36
3.1
V
W
1.2
-55 to 150
2
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
31
Max.
40
Unit
°C/W
Note
1
59
16
75
24
°C/W
°C/W
1, 4
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
Pin name
1
2
3
SOURCE
SOURCE
SOURCE
4
5
GATE
DRAIN
6
DRAIN
7
8
DRAIN
DRAIN
5- 1
D
G
S
Single N-channel MOSFET
ELM14354AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
BVdss Id=250μA, Vgs=0V
30
1
5
μA
100
nA
1.8
3.0
2.2
3.7
V
4.1
5.0
Vgs=4.5V, Id=20A
4.1
5.3
mΩ
Vds=5V, Id=20A
Is=1A, Vgs=0V
105
0.7
1.0
S
V
4
A
Zero gate voltage drain current
Idss
Vds=30V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
Ta=55°C
Gate threshold voltage
Vgs(th) Vds=Vgs, Id=250μA
Static drain-source on-resistance
Rds(on)
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Total gate charge (4.5V)
Gfs
Vsd
Vgs=10V, Id=20A
1.2
Ta=125°C
Is
Ciss
Coss
Crss
Vgs=0V, Vds=15V, f=1MHz
Rg
Vgs=0V, Vds=0V, f=1MHz
Qg
Vgs=10V, Vds=15V, Id=20A
Gate-source charge
Qgs
Gate-drain charge
Turn-on delay time
Turn-on rise time
Qgd
td(on)
Turn-off delay time
Turn-off fall time
td(off) RL=0.75Ω, Rgen=3Ω
tf
Body diode reverse recovery time
Body diode reverse recovery charge
V
tr
trr
Qrr
Vgs=10V, Vds=15V
If=20A, dIf/dt=500A/μs
If=20A, dIf/dt=500A/μs
2010
898
124
0.9
mΩ
pF
pF
pF
1.8
2.7
Ω
36
49
nC
17
23
nC
6
nC
8
7.5
nC
ns
4.0
ns
37.0
7.5
ns
ns
14.0
20.3
ns
nC
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air
environment with Ta=25°C. The value in any given application depends on the user's specific board design.
2. The power dissipation Pd is based on Tj(max)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
3. Repetitive rating, pulse width limited by junction temperature Tj(max)=150°C. Ratings are based on low frequency
and duty cycles to keep initial Tj=25°C.
4. The Rθja is the sum of the thermal impedence from junction to lead Rθjal and lead to ambient.
5. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
6. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted
on 1in² FR-4 board with 2oz. Copper, assuming a maximum junction temperature of Tj(max)=150°C. The SOA curve
provides a single pulse rating.
5- 2
AO4354
Single N-channel MOSFET
ELM14354AA-N
■Typical electrical and thermal characteristics
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
50
VDS=5V
4.5V
80
40
3.5V
10V
30
ID(A)
ID (A)
60
3V
40
20
125�C
25�C
10
20
VGS=2.5V
0
0
0
1
2
3
4
0
5
6
3
4
5
6
Normalized On-Resistance
1.8
5
RDS(ON) (mΩ
Ω)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note 5)
VDS (Volts)
Fig 1: On-Region Characteristics (Note 5)
VGS=4.5V
4
3
2
VGS=10V
1
0
VGS=10V
ID=20A
1.6
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note 5)
0
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note )5)
8
1.0E+02
ID=20A
1.0E+01
6
1.0E+00
125�C
4
IS (A)
RDS(ON) (mΩ
Ω)
1
125�C
1.0E-01
1.0E-02
2
25�C
1.0E-03
25�C
1.0E-04
0
2
1.0E-05
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note 5)
0.0
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note 5)
5- 3
0.2
AO4354
Single N-channel MOSFET
ELM14354AA-N
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
VDS=15V
ID=20A
2500
Capacitance (pF)
8
VGS (Volts)
6
4
2000
1500
1000
2
Coss
500
Crss
0
0
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
1000.0
0
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
25
10000
10µs
RDS(ON)
10µs
100µs
10.0
1.0
1ms
DC
0.1
10ms
0.0
0.1
100
10
TJ(Max)=150�C
TC=25�C
0.01
TA=25�C
TJ(Max)=150�C
TC=25�C
1000
Power (W)
100.0
ID (Amps)
Ciss
1
VDS (Volts)
10
1
100
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-toAmbient (Note 6)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 6)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75�C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note 6)
5- 4
100
1000
AO4354
Single N-channel MOSFET
ELM14354AA-N
■Test circuit and waveform
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+ Vds
-
VDC
DUT
Qgd
Qgs
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
Rg
90%
+ Vdd
VDC
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Vgs
L
Isd
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vds
5- 5
Vdd