Single N-channel MOSFET ELM14354AA-N ■General description ■Features ELM14354AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=23A (Vgs=10V) Rds(on) < 3.7mΩ (Vgs=10V) Rds(on) < 5.3mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Gate-source voltage Vds Vgs Ta=25°C Continuous drain current Ta=100°C Pulsed drain current Avalanche current Repetitive avalanche energy Vds Spike Power dissipation 30 ±20 23 Id Idm Ias 14 174 37 L=0.1mH Eas 100ns Tc=25°C Vspike Tc=100°C Junction and storage temperature range Pd Tj, Tstg V V A A A 3 3 68 mJ 3 36 3.1 V W 1.2 -55 to 150 2 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol t≤10s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. 31 Max. 40 Unit °C/W Note 1 59 16 75 24 °C/W °C/W 1, 4 ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. Pin name 1 2 3 SOURCE SOURCE SOURCE 4 5 GATE DRAIN 6 DRAIN 7 8 DRAIN DRAIN 5- 1 D G S Single N-channel MOSFET ELM14354AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition BVdss Id=250μA, Vgs=0V 30 1 5 μA 100 nA 1.8 3.0 2.2 3.7 V 4.1 5.0 Vgs=4.5V, Id=20A 4.1 5.3 mΩ Vds=5V, Id=20A Is=1A, Vgs=0V 105 0.7 1.0 S V 4 A Zero gate voltage drain current Idss Vds=30V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±20V Ta=55°C Gate threshold voltage Vgs(th) Vds=Vgs, Id=250μA Static drain-source on-resistance Rds(on) Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge (10V) Total gate charge (4.5V) Gfs Vsd Vgs=10V, Id=20A 1.2 Ta=125°C Is Ciss Coss Crss Vgs=0V, Vds=15V, f=1MHz Rg Vgs=0V, Vds=0V, f=1MHz Qg Vgs=10V, Vds=15V, Id=20A Gate-source charge Qgs Gate-drain charge Turn-on delay time Turn-on rise time Qgd td(on) Turn-off delay time Turn-off fall time td(off) RL=0.75Ω, Rgen=3Ω tf Body diode reverse recovery time Body diode reverse recovery charge V tr trr Qrr Vgs=10V, Vds=15V If=20A, dIf/dt=500A/μs If=20A, dIf/dt=500A/μs 2010 898 124 0.9 mΩ pF pF pF 1.8 2.7 Ω 36 49 nC 17 23 nC 6 nC 8 7.5 nC ns 4.0 ns 37.0 7.5 ns ns 14.0 20.3 ns nC NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The value in any given application depends on the user's specific board design. 2. The power dissipation Pd is based on Tj(max)=150°C, using ≤ 10s junction-to-ambient thermal resistance. 3. Repetitive rating, pulse width limited by junction temperature Tj(max)=150°C. Ratings are based on low frequency and duty cycles to keep initial Tj=25°C. 4. The Rθja is the sum of the thermal impedence from junction to lead Rθjal and lead to ambient. 5. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. 6. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, assuming a maximum junction temperature of Tj(max)=150°C. The SOA curve provides a single pulse rating. 5- 2 AO4354 Single N-channel MOSFET ELM14354AA-N ■Typical electrical and thermal characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 50 VDS=5V 4.5V 80 40 3.5V 10V 30 ID(A) ID (A) 60 3V 40 20 125�C 25�C 10 20 VGS=2.5V 0 0 0 1 2 3 4 0 5 6 3 4 5 6 Normalized On-Resistance 1.8 5 RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note 5) VDS (Volts) Fig 1: On-Region Characteristics (Note 5) VGS=4.5V 4 3 2 VGS=10V 1 0 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note 5) 0 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note )5) 8 1.0E+02 ID=20A 1.0E+01 6 1.0E+00 125�C 4 IS (A) RDS(ON) (mΩ Ω) 1 125�C 1.0E-01 1.0E-02 2 25�C 1.0E-03 25�C 1.0E-04 0 2 1.0E-05 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note 5) 0.0 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note 5) 5- 3 0.2 AO4354 Single N-channel MOSFET ELM14354AA-N TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=15V ID=20A 2500 Capacitance (pF) 8 VGS (Volts) 6 4 2000 1500 1000 2 Coss 500 Crss 0 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 50 1000.0 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 10000 10µs RDS(ON) 10µs 100µs 10.0 1.0 1ms DC 0.1 10ms 0.0 0.1 100 10 TJ(Max)=150�C TC=25�C 0.01 TA=25�C TJ(Max)=150�C TC=25�C 1000 Power (W) 100.0 ID (Amps) Ciss 1 VDS (Volts) 10 1 100 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note 6) Figure 9: Maximum Forward Biased Safe Operating Area (Note 6) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75�C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note 6) 5- 4 100 1000 AO4354 Single N-channel MOSFET ELM14354AA-N ■Test circuit and waveform Gate Charge Test Circuit & Waveform Vgs Qg 10V + VDC + Vds - VDC DUT Qgd Qgs - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs Rg 90% + Vdd VDC - 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Vgs L Isd + Vdd VDC - IF t rr dI/dt I RM Vds 5- 5 Vdd