SHENZHENFREESCALE AO4354

AO4354
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS ( αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Features
VDS
30V
ID (at VGS=10V)
23A
RDS(ON) (at VGS=10V)
< 3.7mΩ
RDS(ON) (at VGS = 4.5V)
< 5.3mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
VGS
Gate-Source Voltage
Continuous Drain
Current
TA=25°C
±20
V
14
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAS
37
A
Avalanche energy L=0.1mH C
EAS
68
mJ
VDS Spike
VSPIKE
36
V
Power Dissipation B
100ns
TA=25°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
174
3.1
PD
TA=100°C
Junction and Storage Temperature Range
1/5
Units
V
23
ID
TA=100°C
Maximum
30
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
1.2
RθJA
RθJL
-55 to 150
Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4354
30V N-Channel AlphaMOS
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
TJ=55°C
5
1.2
VGS=4.5V, ID=20A
4.1
5.3
105
0.7
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
V
5
gFS
Reverse Transfer Capacitance
nA
2.2
3.7
VSD
Crss
100
3
VDS=5V, ID=20A
VGS=10V, VDS=15V, ID=20A
0.9
µA
1.8
4.1
TJ=125°C
Units
V
1
VGS=10V, ID=20A
Output Capacitance
Max
30
VDS=30V, VGS=0V
IDSS
Coss
Typ
mΩ
mΩ
S
1
V
4
A
2010
pF
898
pF
124
pF
1.8
2.7
Ω
36
49
nC
17
23
nC
6
nC
Gate Drain Charge
8
nC
Turn-On DelayTime
7.5
ns
4.0
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
IF=20A, dI/dt=500A/µs
37.0
ns
7.5
ns
14
ns
nC
20.3
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
2/5
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AO4354
30V N-Channel AlphaMOS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
50
VDS=5V
4.5V
80
40
3.5V
10V
60
ID(A)
ID (A)
30
3V
40
20
125°C
25°C
10
20
VGS=2.5V
0
0
0
1
2
3
4
0
5
6
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
2
3
4
5
6
1.8
5
VGS=4.5V
4
3
2
VGS=10V
1
0
1.6
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+02
8
ID=20A
1.0E+01
6
1.0E+00
125°C
4
IS (A)
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
125°C
1.0E-01
1.0E-02
2
25°C
25°C
1.0E-03
1.0E-04
0
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/5
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO4354
30V N-Channel AlphaMOS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
VDS=15V
ID=20A
2500
Capacitance (pF)
VGS (Volts)
8
6
4
2
2000
1500
1000
Coss
500
0
Crss
0
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
1000.0
0
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
25
10000
RDS(ON)
10µs
100µs
10.0
1.0
1ms
DC
10ms
0.1
TA=25°C
TJ(Max)=150°C
TC=25°C
1000
Power (W)
10µs
100.0
ID (Amps)
Ciss
100
10
TJ(Max)=150°C
TC=25°C
0.0
1
0.01
0.1
1
VDS (Volts)
10
100
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note F)
4/5
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AO4354
30V N-Channel AlphaMOS
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
5/5
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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