AO4354 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS ( αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Features VDS 30V ID (at VGS=10V) 23A RDS(ON) (at VGS=10V) < 3.7mΩ RDS(ON) (at VGS = 4.5V) < 5.3mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage Continuous Drain Current TA=25°C ±20 V 14 A Pulsed Drain Current C IDM Avalanche Current C IAS 37 A Avalanche energy L=0.1mH C EAS 68 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 174 3.1 PD TA=100°C Junction and Storage Temperature Range 1/5 Units V 23 ID TA=100°C Maximum 30 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 1.2 RθJA RθJL -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W www.freescale.net.cn AO4354 30V N-Channel AlphaMOS Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance TJ=55°C 5 1.2 VGS=4.5V, ID=20A 4.1 5.3 105 0.7 Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) V 5 gFS Reverse Transfer Capacitance nA 2.2 3.7 VSD Crss 100 3 VDS=5V, ID=20A VGS=10V, VDS=15V, ID=20A 0.9 µA 1.8 4.1 TJ=125°C Units V 1 VGS=10V, ID=20A Output Capacitance Max 30 VDS=30V, VGS=0V IDSS Coss Typ mΩ mΩ S 1 V 4 A 2010 pF 898 pF 124 pF 1.8 2.7 Ω 36 49 nC 17 23 nC 6 nC Gate Drain Charge 8 nC Turn-On DelayTime 7.5 ns 4.0 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 37.0 ns 7.5 ns 14 ns nC 20.3 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/5 www.freescale.net.cn AO4354 30V N-Channel AlphaMOS TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 50 VDS=5V 4.5V 80 40 3.5V 10V 60 ID(A) ID (A) 30 3V 40 20 125°C 25°C 10 20 VGS=2.5V 0 0 0 1 2 3 4 0 5 6 Normalized On-Resistance RDS(ON) (mΩ Ω) 2 3 4 5 6 1.8 5 VGS=4.5V 4 3 2 VGS=10V 1 0 1.6 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 8 ID=20A 1.0E+01 6 1.0E+00 125°C 4 IS (A) RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 125°C 1.0E-01 1.0E-02 2 25°C 25°C 1.0E-03 1.0E-04 0 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4354 30V N-Channel AlphaMOS TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=15V ID=20A 2500 Capacitance (pF) VGS (Volts) 8 6 4 2 2000 1500 1000 Coss 500 0 Crss 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 50 1000.0 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 10000 RDS(ON) 10µs 100µs 10.0 1.0 1ms DC 10ms 0.1 TA=25°C TJ(Max)=150°C TC=25°C 1000 Power (W) 10µs 100.0 ID (Amps) Ciss 100 10 TJ(Max)=150°C TC=25°C 0.0 1 0.01 0.1 1 VDS (Volts) 10 100 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AO4354 30V N-Channel AlphaMOS Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 5/5 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn