万和兴电子有限公司 www.whxpcb.com AO4354 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial VDS 30V 23A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 3.7mΩ RDS(ON) (at VGS = 4.5V) < 5.3mΩ 100% UIS Tested 100% Rg Tested SOIC-8 D Top View Bottom View D D D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Units V ±20 V 23 ID TA=100°C Maximum 30 14 A Pulsed Drain Current C IDM Avalanche Current C IAS 37 A Avalanche energy L=0.1mH C EAS 68 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TA=25°C Junction and Storage Temperature Range Rev0: April 2012 3.1 PD TA=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 174 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 1.2 RθJA RθJL -55 to 150 Typ 31 59 16 www.aosmd.com °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AO4354 万和兴电子有限公司 www.whxpcb.com Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A 5 VGS=4.5V, ID=20A 4.1 5.3 mΩ 105 0.7 1 V 4 A Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge V 3.7 gFS Reverse Transfer Capacitance nA 2.2 3 VSD Crss 100 1.8 4.1 TJ=125°C VDS=5V, ID=20A Output Capacitance µA 5 1.2 Units V 1 TJ=55°C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ VGS=10V, VDS=15V, ID=20A Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 0.9 mΩ S 2010 pF 898 pF 124 pF 1.8 2.7 Ω 36 49 nC 17 23 nC 6 nC Gate Drain Charge 8 nC Turn-On DelayTime 7.5 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 4.0 ns 37.0 ns 7.5 ns 14 ns nC 20.3 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: April 2012 www.aosmd.com Page 2 of 5 AO4354 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 50 VDS=5V 4.5V 80 40 3.5V 10V 60 ID(A) ID (A) 30 3V 40 20 125°C 25°C 10 20 VGS=2.5V 0 0 0 1 2 3 4 0 5 6 Normalized On-Resistance RDS(ON) (mΩ Ω) 2 3 4 5 6 1.8 5 VGS=4.5V 4 3 2 VGS=10V 1 0 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 8 1.0E+02 ID=20A 1.0E+01 6 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4 125°C 1.0E-01 1.0E-02 2 25°C 1.0E-03 25°C 1.0E-04 0 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev0: April 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO4354 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3000 VDS=15V ID=20A 2500 Capacitance (pF) VGS (Volts) 8 6 4 2 2000 1500 1000 Coss 500 0 Crss 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 50 1000.0 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 10000 RDS(ON) 10µs 100µs 10.0 1.0 1ms DC 10ms 0.1 TA=25°C TJ(Max)=150°C TC=25°C 1000 Power (W) 10µs 100.0 ID (Amps) Ciss 100 10 TJ(Max)=150°C TC=25°C 0.0 1 0.01 0.1 1 VDS (Volts) 10 100 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note F) Rev0: April 2012 www.aosmd.com Page 4 of 5 AO4354 万和兴电子有限公司 www.whxpcb.com Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev0: April 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5