Single N-channel MOSFET ELM32404LA-S ■General description ■Features ELM32404LA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=12A Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 37mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Gate-source voltage Vds Vgs Ta=25°C Ta=70°C Continuous drain current 30 ±20 12 10 30 Id Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg V V A A 32 3 W 22 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Steady-state Steady-state Symbol Rθjc Rθja ■Pin configuration Typ. Max. 3 75 Unit °C/W °C/W Note ■Circuit D TO-252-3(TOP VIEW) TAB 2 1 Pin No. 1 Pin name GATE 2 3 DRAIN SOURCE 3 4-1 G S Single N-channel MOSFET ELM32404LA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=20V, Vgs=0V, Ta=55°C 10 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge 1.0 30 1.5 μA ±250 nA 2.5 V A Vgs=10V, Id=12A 18 25 mΩ Vgs=4.5V, Id=6A 25 37 mΩ Vds=5V, Id=12A If=1A, Vgs=0V 19 1 S V Is 1.3 A Ism 2.6 A Gfs Vsd Ciss Coss Crss Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Max. body-diode continuous current 30 Vds=24V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note Vgs=0V, Vds=10V, f=1MHz Vgs=10V, Vds=15V, Id=12A Vgs=10V, Vds=10V, Id=1A td(off) Rgen=6Ω tf NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 1 1 1 1 3 790 pF 175 65 pF pF 16.0 2.5 nC nC 2 2 2.1 2.2 4.4 nC ns 2 2 7.5 15.0 ns 2 11.8 21.3 ns 2 3.7 7.4 ns 2 NIKO-SEM P2503BDG N-Channel Logic Level Enhancement ModeN-channel Field EffectMOSFET Transistor Single TO-252 Lead-Free ELM32404LA-S ■Typical electrical and thermalCHARACTERISTICS characteristics TYPICAL PERFORMANCE Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V T A = 125° C Is - Reverse Drain Current(A) 10 -55° C 0.1 0.01 0.001 4-3 25° C 1 0 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 NIKO-SEM Single N-channel MOSFET N-Channel Logic Level Enhancement ELM32404LA-S Mode Field Effect Transistor 4-4 P2503BDG TO-252 Lead-Free