NIKO-SEM P2503BDG N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-252 Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30 25mΩ 12A 1.GATE 2.DRAIN 3.SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V TC = 25 °C Continuous Drain Current TC = 70 °C Pulsed Drain Current 12 ID 1 10 IDM TC = 25 °C Power Dissipation 30 32 PD TC = 70 °C Junction & Storage Temperature Range A W 22 Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RθJc 3 °C / W Junction-to-Ambient RθJA 75 °C / W 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% 2 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN UNIT TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS = 0V, ID = 250µA 30 VGS(th) VDS = VGS, ID = 250µA 1 IGSS IDSS 2.5 V VDS = 0V, VGS = ±20V ±250 nA VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 1 1.5 µA SEP-30-2004 NIKO-SEM P2503BDG N-Channel Logic Level Enhancement Mode Field Effect Transistor On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 ID(ON) VDS = 5V, VGS = 10V TO-252 Lead-Free 30 A VGS = 4.5V, ID = 6A 25 37 RDS(ON) VGS = 10V, ID = 12A 18 25 gfs VDS = 5V, ID = 12A 19 mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge 2 Qg Gate-Source Charge2 2 790 VGS = 0V, VDS = 10V, f = 1MHz pF 175 65 VDS = 0.5V(BR)DSS, VGS = 10V, Qgs ID = 12A 16 2.5 nC Qgd 2.1 Turn-On Delay Time2 td(on) 2.2 4.4 2 tr VDD = 10V 7.5 15 Turn-Off Delay Time2 td(off) ID ≅ 1A, VGS = 10V, RGEN = 6Ω 11.8 21.3 3.7 7.4 Gate-Drain Charge Rise Time Fall Time 2 tf nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS 1.3 Pulsed Current3 ISM 2.6 A Forward Voltage1 VSD 1 V IF = 1A, VGS = 0V Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 1 2 REMARK: THE PRODUCT MARKED WITH “P2503BDG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 2 SEP-30-2004 NIKO-SEM P2503BDG N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-252 Lead-Free TYPICAL PERFORMANCE CHARACTERISTICS Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V T A = 125° C Is - Reverse Drain Current(A) 10 25° C 1 -55° C 0.1 0.01 0.001 0 3 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 SEP-30-2004 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor 4 P2503BDG TO-252 Lead-Free SEP-30-2004 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2503BDG TO-252 Lead-Free TO-252 (DPAK) MECHANICAL DATA mm mm Dimension Dimension Min. Typ. Max. Min. Typ. Max. A 9.35 10.4 H 0.89 2.03 B 2.2 2.4 I 6.35 6.80 C 0.45 0.6 J 5.2 5.5 D 0.89 1.5 K 0.6 1 E 0.45 0.69 L 0.5 0.9 F 0.03 0.23 M 3.96 G 5.2 6.2 N 4.57 5.18 G M 2 1 J I 3 L H D C E F B A K 5 SEP-30-2004