2SK3986-01MR FUJI POWER MOSFET Super FAP-G Series 200511 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220F High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation voltage Symbol V DS VDSX ID ID(puls] VGS IAR Ratings 500 500 3.6 ±14.4 ±30 3.6 EAS 227.9 2.1 20 5 21 2.16 +150 EAR dV DS /dt dV/dt PD Tch Tstg VISO -55 to +150 2 Unit V V A A V A Remarks VGS=-30V Note *1 Equivalent circuit schematic mJ Note *2 mJ kV/μs kV/μs W W °C °C kVrms Note *3 VDS < = 500V Note *4 Tc=25°C Ta=25°C Drain(D) Gate(G) Source(S) t=60sec, f=60Hz Note *1 Tch< =150°C Note *2 Starting Tch=25°C, IAS=1.5A, L=186mH, VCC=50V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *4 IF < = 150°C = -ID, -di/dt=50A/μs, Vcc < = BVDSS, Tch < Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Test Conditions ID= 250μA VGS=0V ID= 250μA VDS=VGS VDS=500V VGS=0V VDS=400V VGS=0V VGS=±30V VDS=0V ID=1.8A VGS=10V 500 3.0 Tch=25°C Tch=125°C ID=1.8A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=1.8A VGS=10V 1.7 RGS=10 Ω VCC =250V ID=3.6A VGS=10V IF=3.6A VGS=0V Tch=25°C IF=3.6A VGS=0V -di/dt=100A/μs Tch=25°C 5.0 25 250 100 2.30 1.84 3.4 330 50 2.5 11 5.0 23 6.0 13 5.5 2.5 1.00 0.5 2.3 500 75 5.0 18 7.5 35 9.0 20 8.5 3.8 1.50 Typ. Max. V V μA nA Ω S pF ns nC V μs μC Thermalcharacteristics Item Thermal resistance http://www.fujielectric.co.jp/fdt/scd/ Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. 5.952 58.0 Units °C/W °C/W 1 2SK3986-01MR (500V/3.6A/2.3Ω) FUJI POWER MOSFET Characteristics 2 2SK3986-01MR (500V/3.6A/2.3Ω) FUJI POWER MOSFET 3 2SK3986-01MR (500V/3.6A/2.3Ω) FUJI POWER MOSFET http://www.fujielectric.co.jp/fdt/scd/ 4