FUJI 2SK3986-01MR

2SK3986-01MR FUJI POWER MOSFET
Super FAP-G Series
200511
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Features
TO-220F
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Non-repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Isolation voltage
Symbol
V DS
VDSX
ID
ID(puls]
VGS
IAR
Ratings
500
500
3.6
±14.4
±30
3.6
EAS
227.9
2.1
20
5
21
2.16
+150
EAR
dV DS /dt
dV/dt
PD
Tch
Tstg
VISO
-55 to +150
2
Unit
V
V
A
A
V
A
Remarks
VGS=-30V
Note *1
Equivalent circuit schematic
mJ
Note *2
mJ
kV/μs
kV/μs
W
W
°C
°C
kVrms
Note *3
VDS <
= 500V
Note *4
Tc=25°C
Ta=25°C
Drain(D)
Gate(G)
Source(S)
t=60sec, f=60Hz
Note *1 Tch<
=150°C
Note *2 Starting Tch=25°C, IAS=1.5A, L=186mH, VCC=50V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note *4 IF <
= 150°C
= -ID, -di/dt=50A/μs, Vcc <
= BVDSS, Tch <
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
V SD
trr
Qrr
Test Conditions
ID= 250μA
VGS=0V
ID= 250μA
VDS=VGS
VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V VDS=0V
ID=1.8A VGS=10V
500
3.0
Tch=25°C
Tch=125°C
ID=1.8A VDS=25V
VDS =25V
VGS=0V
f=1MHz
VCC=300V ID=1.8A
VGS=10V
1.7
RGS=10 Ω
VCC =250V
ID=3.6A
VGS=10V
IF=3.6A VGS=0V Tch=25°C
IF=3.6A VGS=0V
-di/dt=100A/μs Tch=25°C
5.0
25
250
100
2.30
1.84
3.4
330
50
2.5
11
5.0
23
6.0
13
5.5
2.5
1.00
0.5
2.3
500
75
5.0
18
7.5
35
9.0
20
8.5
3.8
1.50
Typ.
Max.
V
V
μA
nA
Ω
S
pF
ns
nC
V
μs
μC
Thermalcharacteristics
Item
Thermal resistance
http://www.fujielectric.co.jp/fdt/scd/
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
5.952
58.0
Units
°C/W
°C/W
1
2SK3986-01MR (500V/3.6A/2.3Ω)
FUJI POWER MOSFET
Characteristics
2
2SK3986-01MR (500V/3.6A/2.3Ω)
FUJI POWER MOSFET
3
2SK3986-01MR (500V/3.6A/2.3Ω)
FUJI POWER MOSFET
http://www.fujielectric.co.jp/fdt/scd/
4