Single N-channel MOSFET ELM32420LA-S ■General description ■Features ELM32420LA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=20V Id=45A Rds(on) < 14mΩ (Vgs=5V) Rds(on) < 26mΩ (Vgs=2.5V) ■Maximum absolute ratings Parameter Symbol Vgs Gate-source voltage Continuous drain current Ta=25°C. Unless otherwise noted. Limit Unit Note ±12 V 45 A 30 140 A 3 48 W 20 Ta=25°C Id Ta=100°C Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=100°C Junction and storage temperature range Tj, Tstg -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-case Steady-state Symbol Rθjc Maximum junction-to-ambient Steady-state Rθja ■Pin configuration Typ. Max. 2.6 Unit °C/W 110.0 °C/W Note ■Circuit D TO-252-3(TOP VIEW) TAB 2 1 Pin No. 1 Pin name GATE 2 3 DRAIN SOURCE 3 4-1 G S Single N-channel MOSFET ELM32420LA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=13.2V, Vgs=0V, Ta=125°C 10 Vds=0V, Vgs=±12V Static drain-source on-resistance Rds(on) Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge 0.45 45 0.75 μA ±100 nA 1.25 V A Vgs=5V, Id=18A 11 14 mΩ Vgs=2.5V, Id=9A 18 26 mΩ Vds=10V, Id=18A If=Is, Vgs=0V 26 1.3 S V Is 45 A Ism 140 A Gfs Vsd Ciss Coss Crss Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time Body diode reverse recovery time V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Max. body-diode continuous current 20 Vds=16V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note Vgs=0V, Vds=15V, f=1MHz Vgs=5V, Vds=10V, Id=18A Vgs=5V, Vds=10V, Id=18A td(off) Rgen=3.3Ω tf trr Peak reverse recovery current Irm(rec) If=Is, dIf/dt=100A/μs Body diode reverse recovery charge Qrr NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 1 1 1 1 3 500 pF 310 125 pF pF 17.0 1.5 nC nC 2 2 10.5 7.5 nC ns 2 2 83.0 ns 2 18.0 ns 2 23.0 37 ns ns 2 200 0.043 A μC NIKO-SEM Single N-channel MOSFET N-Channel Logic Level Enhancement ELM32420LA-S Mode Field Effect Transistor ■Typical electrical and thermal characteristics P1402CDG TO-252 (DPAK) Lead-Free Body Diode Forward Voltage Variation with Source Current and Temperature 60 VGS= 0V Is - Reverse Drain Current(A) 10 25° C 0.1 -55° C 0.01 0.001 0.0001 4-3 T = 125° C 1 0 0.2 0.4 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 NIKO-SEM Single N-channel MOSFET N-Channel Logic Level Enhancement ELM32420LA-S Mode Field Effect Transistor 4-4 P1402CDG TO-252 (DPAK) Lead-Free