Single N-channel MOSFET ELM34408AA-N ■General description ■Features ELM34408AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=8A Rds(on) < 18mΩ (Vgs=10V) Rds(on) < 30mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note 30 V ±20 V Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current Pulsed drain current 8 6 32 Id Idm Tc=25°C Power dissipation Tc=70°C Junction and storage temperature range Pd Tj, Tstg A A 2.5 3 W 1.6 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Steady-state Rθja ■Pin configuration Max. Unit 50 °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 Typ. 5 Pin No. 1 Pin name SOURCE 2 3 4 SOURCE SOURCE GATE 5 6 7 DRAIN DRAIN DRAIN 8 DRAIN 4-1 D G S Single N-channel MOSFET ELM34408AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=20V, Vgs=0V, Ta=55°C 10 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Max. body-diode continuous current 30 Vds=24V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note 1.0 8 1.5 μA ±100 nA 2.5 V A Vgs=10V, Id=8A 15 18 mΩ Vgs=4.5V, Id=7A 22 30 mΩ Vds=15V, Id=8A If=1A, Vgs=0V 16 1.1 S V Is 2.3 A Ism 4.6 A Gfs Vsd Ciss 1200 pF Coss Vgs=0V, Vds=15V, f=1MHz Crss 220 100 pF pF Gate-source charge Qg Qgs 15.0 5.8 Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Turn-off fall time Body diode reverse recovery time Vgs=4.5V, Vds=15V, Id=2A 3.8 Vgs=10V, Vds=15V, Id=1A td(off) Rgen=0.2Ω tf trr 20.0 If=2.3A, dIf/dt=100A/μs NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%; 2. Independent of operating temperature; 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 1 1 1 1 3 nC nC 2 2 2 2 11 17 18 nC ns 26 ns 2 37 54 ns 2 20 50 30 80 ns ns 2 NIKO-SEM Single N-channel MOSFET N-Channel Enhancement Mode Field ELM34408AA-N Effect Transistor ■Typical electrical and thermal characteristics 4-3 P1803BVG SOP-8 Lead Free N-Channel Enhancement Mode Field Single N-channel MOSFET Effect Transistor ELM34408AA-N NIKO-SEM SOP-8 Lead Free MAXIMUM SAFE OPERATING AREA 2 10 I D,DRAIN CURRENT( A ) P1803BVG R 1 10 100 µS it Lim n) ds(o 10m s 1ms 100 ms 0 10 10s DC VGS= 10V SINGLE PULSE R｣cJA= 125 °C/W TA = 25 °C -1 10 -2 10 1s -1 10 0 1 10 10 VDS,DRAIN - SOURCE VOLTAGE 2 10 4-4 4 Mar-21-2005