Single N-channel MOSFET ELM32424LA-S ■General description ■Features ELM32424LA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=25V Id=50A Rds(on) < 9.5mΩ (Vgs=10V) Rds(on) < 16mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Symbol Vgs Gate-source voltage Continuous drain current Ta=25°C 50 Id Ta=100°C Pulsed drain current Avalanche current Avalanche energy Repetitive avalanche energy Ta=25°C. Unless otherwise noted. Limit Unit Note ±20 V L=0.1mH L=0.05mH Tc=25°C Tc=100°C Junction and storage temperature range Power dissipation Idm 35 200 Iar Eas Ear 40 250 8.6 Pd Tj, Tstg A 50 30 -55 to 150 A 3 A mJ mJ 4 W °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Maximum case-to-heatsink Steady-state Steady-state Symbol Rθjc Rθja Rθcs ■Pin configuration Typ. Max. 2.5 Unit °C/W 62.5 °C/W °C/W 0.6 Note ■Circuit D TO-252-3(TOP VIEW) TAB 2 1 Pin No. Pin name 1 2 GATE DRAIN 3 SOURCE 3 4-1 G S Single N-channel MOSFET ELM32424LA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=20V, Vgs=0V, Ta=125°C 250 Vds=0V, Vgs=±20V ±250 nA 3.0 V A Static drain-source on-resistance Rds(on) Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge 1.0 50 1.6 μA 1 Vgs=10V, Id=25A 7.5 9.5 mΩ Vgs=4.5V, Id=20A 11.0 16.0 mΩ Vds=10V, Id=25A Is=25A, Vgs=0V 32 0.9 1.3 S V Is 50 A Ism 150 A Ciss 1200 1800 pF 600 350 1000 500 pF pF 25 15 50 nC nC 2 2 2 2 Gfs Vsd Coss Crss Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time Body diode reverse recovery time V 25 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=10V Max. body-diode continuous current 25 Vds=20V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note Vgs=0V, Vds=15V, f=1MHz Vgs=10V, Vds=10V, Id=25A Vgs=10V, Vds=15V, Id=50A td(off) RL=1Ω, Rgen=24Ω tf trr Peak reverse recovery current Irm(rec) If=Is, dIf/dt=100A/μs Body diode reverse recovery charge Qrr NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 1 1 1 3 10 6 16 nC ns 120 250 ns 2 40 90 ns 2 105 70 200 ns ns 2 200 0.043 A μC NIKO-SEM N-Channel Logic LevelMOSFET Enhancement Single N-channel Mode Field Effect Transistor ELM32424LA-S ■Typical electrical and thermal characteristics P0903BDG TO-252 (DPAK) Lead-Free TYPICAL CHARACTERISTICS 3 4-3 SEP-24-2004 NIKO-SEM N-Channel Logic Level Enhancement Single N-channel MOSFET Mode Field Effect Transistor ELM32424LA-S 4-4 4 P0903BDG TO-252 (DPAK) Lead-Free SEP-24-2004