Single N-channel MOSFET ELM32408LA-S ■General description ■Features ELM32408LA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=40V Id=10A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Ta=25°C. Unless otherwise noted. Limit Unit Note 40 V ±20 V Symbol Vds Vgs Ta=25°C Ta=100°C 10 8 40 Id Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=100°C Junction and storage temperature range Tj, Tstg A A 32 3 W 22 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Symbol Steady-state Steady-state Rθjc Rθja ■Pin configuration Typ. Max. Unit 3 75 °C/W °C/W Note ■Circuit D TO-252-3(TOP VIEW) TAB 2 1 Pin No. Pin name 1 2 GATE DRAIN 3 SOURCE 3 4-1 G S Single N-channel MOSFET ELM32408LA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=30V, Vgs=0V, Ta=125°C 10 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=10V Max. body-diode continuous current 40 Vds=32V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note 1.0 40 1.5 μA ±250 nA 2.5 V A Vgs=10V, Id=10A 21 28 mΩ Vgs=4.5V, Id=8A 30 42 mΩ Vds=10V, Id=10A If=Is, Vgs=0V 19 1 S V Is 1.3 A Ism 2.6 A Gfs Vsd Ciss Coss Crss Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Vgs=0V, Vds=10V, f=1MHz Vgs=10V, Vds=20V, Id=10A Vgs=10V, Vds=20V, Id=1A td(off) RL=1Ω, Rgen=6Ω 1 1 3 pF 175 65 pF pF 16.0 2.5 nC nC 2 2 2.1 2.2 4.4 nC ns 2 2 7.5 15.0 ns 2 11.8 21.3 ns 2 7.4 ns ns 2 tf trr If=5A, dIf/dt=100A/μs 3.7 15.5 Body diode reverse recovery charge Qrr If=5A, dIf/dt=100A/μs 7.9 4-2 1 790 Turn-off fall time Body diode reverse recovery time NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 1 nC NIKO-SEM N-Channel Logic Level Enhancement P2804BDG Mode Field Effect Transistor TO-252 (DPAK) Lead-Free Single N-channel MOSFET ELM32408LA-S ■Typical electrical and thermal characteristics Body Diode Forward Voltage Variation with Source Current and Temperature 100 Is - Reverse Drain Current(A) V GS = 0V 25° C 1 -55° C 0.1 0.01 0.001 4-3 T A = 125° C 10 0 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 NIKO-SEM N-Channel Logic Level Enhancement P2804BDG Single N-channel MOSFET Mode Field Effect Transistor ELM32408LA-S 4-4 TO-252 (DPAK) Lead-Free