Single N-channel MOSFET ELM529977A-S ■General description ■Features ELM529977A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=60V Id=12A Rds(on) = 118mΩ (Vgs=10V) Rds(on) = 130mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Symbol Drain-source voltage Vds 60 V Gate-source voltage Vgs ±20 12 V Ta=25°C Continuous drain current Id Ta=70°C Pulsed drain current Avalanche current Idm Ias 15 A Pd 40 15 W Tj, Tstg -55 to 150 °C Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range A 8 30 A ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja ■Pin configuration Typ. Max. 62.5 Unit °C/W ■Circuit D TO-252-3(TOP VIEW) TAB 2 1 Pin No. Pin name 1 2 GATE DRAIN 3 SOURCE 3 5-1 G S Single N-channel MOSFET ELM529977A-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=60V, Vgs=0V, Ta=85°C 5 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) Max. body-diode continuous current DYNAMIC PARAMETERS V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Gfs Vsd 60 Vds=60V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit 0.7 30 ±100 nA 2.5 V A Vgs=10V, Id=8A 118 Vgs=4.5V, Id=6A 130 Vds=15V, Id=5.3A Is=2A, Vgs=0V 12 0.8 Is μA mΩ 1.2 S V 12 A Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Qgd 3 td(on) 6 12 ns tr Vgs=10V, Vds=30V, RL=6Ω td(off) Id=5A, Rgen=3.3Ω 6 12 12 20 ns ns 4 10 ns Turn-on rise time Turn-off delay time Turn-off fall time 480 50 pF pF Crss 35 pF Qg Qgs 6 2 Vgs=0V, Vds=25V, f=1MHz Vgs=4.5V, Vds=48V, Id=5A tf 5-2 12 nC nC nC AFN9977 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM529977A-S Typical Characteristics ■Typical electrical and thermal characteristics ©Alfa-MOS Technology Corp. Rev.A Jul. 2012 www.alfa-mos.com Page 3 5-3 AFN9977 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM529977A-S Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A Jul. 2012 www.alfa-mos.com Page 4 5-4 AFN9977 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM529977A-S Typical ■TestCharacteristics circuit and waveform ©Alfa-MOS Technology Corp. Rev.A Jul. 2012 www.alfa-mos.com Page 5 5-5