AOSMD AON2809

AON2809
12V Dual P-Channel MOSFET
General Description
Product Summary
The AON2809 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=-4.5V)
-12V
-2A
RDS(ON) (at VGS=-4.5V)
< 68mΩ
RDS(ON) (at VGS=-2.5V)
< 90mΩ
RDS(ON) (at VGS=-1.8V)
< 118mΩ
Typical ESD protection
HBM Class 2
VDS
D1
DFN 2x2A
Top View
Bottom View
D1
G2
S2
D1
D2
D2
Pin 1
G1
S1
G1
G2
S1
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current G
VGS
TA=25°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Rev 0: Nov. 2012
Steady-State
±8
V
A
2.1
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
Units
V
-8
PD
TA=70°C
Maximum
-12
-1.6
IDM
TA=25°C
S2
-2
ID
TA=70°C
Pulsed Drain Current C
Power Dissipation B
D2
RθJA
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-55 to 150
Typ
50
80
°C
Max
60
100
Units
°C/W
°C/W
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AON2809
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-12
-1
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS= ±6V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µA
-0.3
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-8
VGS=-4.5V, ID=-2A
Static Drain-Source On-Resistance
TJ=125°C
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
mΩ
V
-1.5
A
VGS=0V, VDS=-6V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5)
Total Gate Charge
Gate Drain Charge
89
-1
Maximum Body-Diode Continuous Current
Qgd
72
A
mΩ
IS
Gate Source Charge
68
mΩ
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Qgs
55
90
VDS=-5V, ID=-2A
Gate resistance
V
118
IS=-1A,VGS=0V
Rg
µA
-0.9
90
Diode Forward Voltage
Reverse Transfer Capacitance
±10
-0.6
70
Forward Transconductance
Output Capacitance
µA
VGS=-1.8V, ID=-1A
VSD
Crss
Units
VGS=-2.5V, ID=-1A
gFS
Coss
Max
V
VDS=-12V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=-4.5V, VDS=-6V, ID=-2A
VGS=-4.5V, VDS=-6V, RL=3Ω,
RGEN=3Ω
8
-0.7
S
415
pF
115
pF
78
pF
26
Ω
4.4
nC
0.8
nC
0.9
nC
11.8
ns
24.5
ns
54.5
ns
tf
Turn-Off Fall Time
37.3
ns
trr
Body Diode Reverse Recovery Time
IF=-2A, dI/dt=100A/µs
21
Qrr
Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/µs
5
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on RθJA t ≤ 10s and the maxminum maximum allowed junction temperature of 150°C.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Nov. 2012
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AON2809
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
20
-10V
VDS=-5V
-4.5V
-2.5V
16
15
-ID(A)
-ID (A)
12
10
8
VGS=-2V
125°C
5
4
25°C
0
0
0
1
2
3
4
5
0
1
-VDS (Volts)
Fig 1: On-Region Characteristics
3
4
-VGS(Volts)
Figure 2: Transfer Characteristics
140
Normalized On-Resistance
1.6
120
RDS(ON) (mΩ
Ω)
2
VGS=-1.8V
100
VGS=-2.5V
80
60
VGS=-4.5V
40
20
VGS=-2.5V
ID=-1A
1.4
VGS=-4.5V
ID=-2A
1.2
VGS=-1.8V
ID=-1A
1
0.8
0
2
4
6
0
25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
140
1E+01
ID=-2A
120
1E+00
125°C
1E-01
25°C
125°C
80
-IS (A)
RDS(ON) (mΩ
Ω)
100
60
40
1E-02
1E-03
25°C
1E-04
20
0
0
2
4
6
8
10
1E-05
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev0: Nov. 2012
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AON2809
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
700
5
VDS=-6V
ID=-2A
600
500
Capacitance (pF)
-VGS (Volts)
4
3
2
Ciss
400
300
200
Coss
1
100
Crss
0
0
0
1
2
3
4
5
6
0
3
6
9
-VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
200
10.0
TA=25°C
150
RDS(ON)
limited
1ms
Power (W)
-ID (Amps)
10µs
1.0
12
10ms
DC
10s
0.1
100
50
TJ(Max)=150°C
TA=25°C
0
0.00001
0.0
0.01
0.1
1
10
0.001
0.1
10
1000
100
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=100°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Rev0: Nov. 2012
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Page 4 of 5
AON2809
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
+
DUT
Qgs
Vds
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
td(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev0: Nov. 2012
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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