Dual N-channel MOSFET (common drain) ELM58822SA-S ■General description ■Features ELM58822SA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=20V Id=6.5A Rds(on) = 32mΩ (Vgs=4.5V) Rds(on) = 35mΩ (Vgs=2.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Symbol Drain-source voltage Vds 20 V Gate-source voltage Vgs ±12 6.5 V Ta=25°C Continuous drain current Id Ta=70°C Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range A 4.8 20 2.8 A W 1.8 -55 to 150 Tj, Tstg °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja Typ. ■Pin configuration Max. 62.5 Unit °C/W ■Circuit TSSOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 Pin name DRAIN1/DRAIN2 2 3 4 SOURCE1 SOURCE1 GATE1 5 6 7 GATE2 SOURCE2 SOURCE2 8 DRAIN1/DRAIN2 5-1 D1 D2 G2 G1 S1 S2 Dual N-channel MOSFET (common drain) ELM58822SA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=16V, Vgs=0V, Ta=85°C 30 Vds=0V, Vgs=±8V Static drain-source on-resistance Rds(on) Max.body-diode continuous current DYNAMIC PARAMETERS Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Turn-on rise time Turn-off delay time Turn-off fall time 0.5 10 μA ±100 nA 1.0 V A Vgs=4.5V, Id=6.5A 28 32 Vgs=2.5V, Id=4.8A 32 35 Vds=5V, Id=7A Is=1.7A, Vgs=0V 25 Is Input capacitance Output capacitance Gate-source charge Gate-drain charge Turn-on delay time V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Gfs Vsd 20 Vds=16V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit mΩ 1.3 S V 1.5 A 700 75 pF pF Crss 45 pF Qg Qgs Qgd 650 200 180 nC nC nC Vgs=0V, Vds=20V, f=1MHz Vgs=4.5V, Vds=10V, Id=7A td(on) Vgs=4.5V, Vds=10V tr RL=1.4Ω, Id=1A td(off) Rgen=3Ω tf 5-2 8 12 12 20 ns ns 32 40 ns 10 15 ns AFN8822S Alfa-MOS 20V Common-Drain N-Channel Technology (common drain)Mode MOSFET Dual N-channel MOSFET Enhancement ELM58822SA-S Typical Characteristics ■Typical electrical and thermal characteristics ©Alfa-MOS Technology Corp. Rev.A Nov. 2010 www.alfa-mos.com Page 3 5-3 AFN8822S Alfa-MOS 20V Common-Drain N-Channel Technology Enhancement Mode MOSFET Dual N-channel MOSFET (common drain) ELM58822SA-S Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A Nov. 2010 www.alfa-mos.com Page 4 5-4 AFN8822S Alfa-MOS 20V Common-Drain N-Channel Technology (common drain)Mode MOSFET Dual N-channel MOSFET Enhancement ELM58822SA-S Typical ■TestCharacteristics circuit and waveform ©Alfa-MOS Technology Corp. Rev.A Nov. 2010 www.alfa-mos.com Page 5 5-5