Single P-channel MOSFET ELM33407CA-S ■General description ■Features ELM33407CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-20V Id=-3A Rds(on) < 150mΩ (Vgs=-4.5V) Rds(on) < 250mΩ (Vgs=-2.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds -20 V Gate-source voltage Vgs ±12 -3.0 V Ta=25°C Continuous drain current Id Ta=70°C Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg A -1.4 -10 1.25 A 3 W 0.80 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Steady-state Rθja ■Pin configuration Typ. Max. Unit 166 °C/W ■Circuit SOT-23(TOP VIEW) 3 1 2 Note D Pin No. 1 2 Pin name GATE SOURCE 3 DRAIN G S 4-1 Single P-channel MOSFET ELM33407CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Vgs=0V, Id=-250μA Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-16V, Vgs=0V, Ta=125°C -10 Vds=0V, Vgs=±12V Static drain-source on-resistance Rds(on) Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V Max. body-diode continuous current -20 Vds=-16V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note -0.5 -6 -0.9 μA ±100 nA -1.2 V A Vgs=-4.5V, Id=-2A 100 150 mΩ Vgs=-2.5V, Id=-1A 180 250 mΩ Vds=-5V, Id=-2A Is=-1A, Vgs=0V 16 -1.2 S V Is -1.6 A Ism -3 A Gfs Vsd 1 1 1 1 3 Ciss 410 pF Coss Vgs=0V, Vds=-6V, f=1MHz Crss 220 85 pF pF Gate-source charge Qg Qgs 5.80 10.00 nC 0.85 nC 2 2 Gate-drain charge Turn-on delay time Qgd td(on) 1.70 13 nC ns 2 2 Turn-on rise time Turn-off delay time tr 36 ns 2 42 ns 2 34 ns 2 Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Turn-off fall time Vgs=-4.5V, Vds=-10V Id=-2A Vgs=-4.5V, Vds=-10V td(off) Id=-1A, Rgen=6Ω tf NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 NIKO-SEM SingleLogic P-channel P-Channel LevelMOSFET Enhancement PA502FMG ModeELM33407CA-S Field Effect Transistor SOT-23 Lead-Free ■Typical electrical and thermal characteristics Body Diode Forward Voltage Variation with Source Current and Temperature -Is - Reverse Drain Current(A) 10 V GS = 0V 1 0.1 25° C 0.01 -55° C 0.001 0.0001 4-3 T A = 125° C 0 0.2 0.4 0.8 1.0 0.6 -VSD - Body Diode Forward Voltage(V) 1.2 NIKO-SEM P-Channel Logic Level Enhancement Single P-channel MOSFET Mode Field Effect Transistor ELM33407CA-S 4-4 PA502FMG SOT-23 Lead-Free