Single P-channel MOSFET ELM34417AA-N ■General description ■Features ELM34417AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note -30 V Symbol Vds Gate-source voltage Vgs Ta=25°C Ta=70°C Continuous drain current Pulsed drain current ±20 -6 -5 -30 Id Idm Tc=25°C Power dissipation Tc=70°C Junction and storage temperature range Pd Tj, Tstg V A A 2.5 3 W 1.3 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Steady-state Steady-state Symbol Rθjc Rθja ■Pin configuration Typ. Max. 25 50 Unit °C/W °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 Pin name SOURCE 2 3 4 SOURCE SOURCE GATE 5 6 7 DRAIN DRAIN DRAIN 8 DRAIN 4-1 D G S Single P-channel MOSFET ELM34417AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-20V, Vgs=0V, Ta=125°C -10 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Max. body-diode continuous current -30 Vds=-24V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note -0.9 -30 -1.5 μA ±100 nA -3.0 V A Vgs=-10V, Id=-6A 37 45 mΩ Vgs=-4.5V, Id=-5A 60 75 mΩ Vds=-10V, Id=-6A Is=-1A, Vgs=0V 16 -1.2 S V Is -2.1 A Ism -4 A Gfs Vsd Ciss 530 pF Coss Vgs=0V, Vds=-15V, f=1MHz Crss 135 70 pF pF Gate-source charge Qg Qgs 10.0 2.2 Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge Vgs=-10V, Vds=-15V Id=-6A Vgs=-10V, Vds=-15V td(off) Id=-1A, RL=1Ω, Rgen=6Ω 3 2.0 5.7 nC ns 2 2 10.0 ns 2 18.0 ns 2 ns ns 2 nC If=-5A, dIf/dt=100A/μs Qrr If=-5A, dIf/dt=100A/μs 7.9 4-2 1 1 2 2 5.0 15.5 NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 1 nC nC tf trr 14.0 1 NIKO-SEM Single Logic P-channel P-Channel LevelMOSFET Enhancement Mode Field Effect Transistor ELM34417AA-N ■Typical electrical and thermal characteristics 3 4-3 P06P03LVG SOP-8 Lead-Free JUN-10-2004 Single P-channel MOSFET NIKO-SEM P-Channel ELM34417AA-N Logic Level Enhancement Mode Field Effect Transistor 4 4-4 P06P03LVG SOP-8 Lead-Free JUN-10-2004