Single P-channel MOSFET ELM34417AA-N ■General description ■Features ELM34417AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Symbol Vds Vgs Ta=25°C Continuous drain current Ta=70°C Pulsed drain current Limit -30 ±20 -6 Id Ta=25°C Ta=70°C Junction and storage temperature range Pd Tj, Tstg Note A -5 -30 Idm Power dissipation Unit V V A 2.5 1.3 -55 to 150 3 W °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Steady-state Steady-state Symbol Rθjc Rθja ■Pin configuration Typ. Max. 25 50 Unit °C/W °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 Pin name SOURCE 2 3 SOURCE SOURCE 4 GATE 5 6 7 DRAIN DRAIN DRAIN 8 DRAIN 4- 1 D G S Single P-channel MOSFET ELM34417AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition Min. BVdss Id=-250μA, Vgs=0V -30 Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-20V, Vgs=0V, Tj=125°C Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Static drain-source on-resistance Rds(on) ±100 nA -3.0 V A 45 mΩ 60 16 75 mΩ S Gfs Diode forward voltage Vsd Is=-1A, Vgs=0V Max. body-diode continuous current Pulsed body-diode current Is Ism DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=-15V, f=1MHz Crss Vgs=-10V, Vds=-15V Id=-6A Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd td(on) Turn-on rise time Turn-off delay time tr Vgs=-10V, Vds=-15V td(off) Id≈-1A, Rl=1Ω, Rgen=6Ω tf trr Qrr -1.5 μA 37 Forward transconductance Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge -0.9 -30 -1 -10 Vgs=-10V, Id=-6A Vgs=-4.5V, Id=-5A Vds=-10V, Id=-6A Qg V Vds=-24V, Vgs=0V Gate threshold voltage On state drain current Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Ta=25°C Typ. Max. Unit Note If=-5A, dl/dt=100A/μs If=-5A, dl/dt=100A/μs NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4- 2 1 1 -1.2 V 1 -2.1 -4 A A 3 530 135 pF pF 70 pF 10.0 1 14.0 nC 2 2.2 2.0 5.7 nC nC ns 2 2 2 10.0 18.0 ns ns 2 2 5.0 15.5 7.9 ns ns nC 2 NIKO-SEM Single Logic P-channel P-Channel LevelMOSFET Enhancement Mode Field Effect Transistor ELM34417AA-N ■Typical electrical and thermal characteristics 3 4- 3 P06P03LVG SOP-8 Lead-Free JUN-10-2004 Single P-channel MOSFET NIKO-SEM P-Channel ELM34417AA-N Logic Level Enhancement Mode Field Effect Transistor 4 4- 4 P06P03LVG SOP-8 Lead-Free JUN-10-2004