Single P-channel MOSFET ELM33413CA-S ■General description ■Features ELM33413CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • Vds=-30V Id=-4A Rds(on) < 64mΩ (Vgs=-4.5V) Rds(on) < 80mΩ (Vgs=-2.5V) Rds(on) < 120mΩ (Vgs=-1.8V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds -30 V Gate-source voltage Vgs ±12 -4.0 -3.0 V Idm -20 A Pd 1.25 0.80 W Tj, Tstg -55 to 150 °C Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range Id A 3 ■Thermal characteristics Parameter Maximum junction-to-ambient Steady-state Symbol Rθja ■Pin configuration Typ. 75 Max. 100 ■Circuit SOT-23(TOP VIEW) 3 1 Unit °C/W 2 D Pin No. 1 2 Pin name GATE SOURCE 3 DRAIN G S 4-1 Note Single P-channel MOSFET ELM33413CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol BVdss Vgs=0V, Id=-250μA Zero gate voltage drain current Idss Gate-body leakage current Igss Gate threshold voltage On state drain current Static drain-source on-resistance Condition Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note -30 V Vds=-24V, Vgs=0V -1 Vds=-20V, Vgs=0V, Ta=125°C -10 Vds=0V, Vgs=±12V μA ±100 nA -0.45 -0.80 -1.20 -20 V A Vgs=-4.5V, Id=-4A 55 64 mΩ Rds(on) Vgs=-2.5V, Id=-3A 62 80 mΩ 1 90 12 120 mΩ S 1 -1.2 V 1 -1.6 -3 A A 3 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V 1 Forward transconductance Gfs Vgs=-1.8V, Id=-2A Vds=-5V, Id=-4A Diode forward voltage Vsd Is=-1A, Vgs=0V Max. body-diode continuous current Pulsed body-diode current DYNAMIC PARAMETERS Is Ism Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=-15V, f=1MHz 950 115 pF pF Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Crss 75 pF 9.4 nC 2 Gate-source charge Gate-drain charge Qgs Qgd 2.0 3.0 nC nC 2 2 Turn-on delay time Turn-on rise time td(on) 6.3 ns 2 3.2 ns 2 Turn-off delay time Turn-off fall time td(off) Id=-1A, Rgen=6Ω tf 38.0 12.0 ns ns 2 2 Qg tr Vgs=-4.5V, Vds=-15V Id=-4A Vgs=-4.5V, Vds=-10V NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 P6403FMG P-Channel Logic Level Enhancement Single MOSFET ModeP-channel Field Effect Transistor NIKO-SEM SOT-23 Lead-Free ELM33413CA-S ■Typical electrical and thermal characteristics Typical Electrical Characteristics ID, Drain current(A) -3.0V -2.5V VGS= -4.5V -3.5V 12 R , Normrlized Drain-source on-resistance On-Region Characteristics. 15 9 DS(ON) -2.0V 6 3 -1.5V 0 0 1 2 3 On-Resistance Variation with Drain Current and Gate Voltage. 2 VGS= -2.0V 1.8 1.6 -2.5V 1.4 -4.5V 0.8 4 0 1.1 DS(ON) 1 -25 0 0.14 0.1 TA= 125°C TA= 25°C 0.06 25 50 75 100 125 0.02 150 1 2 Is, Reverse Drain Current (A) TA= -55°C 8 25°C 125°C 6 4 2 1 1.5 2 VGS, Gate to Source Voltage(V) 3 4 5 -VGS, Gate to Source Voltage(V) Transfer Characteristics. VDS= -5V ID, Drain Current(A) 15 ID= -2A 0.18 TJ, Junction Temperature(°C) 0.5 12 R 0.8 0 9 0.22 DS(ON) 0.9 10 6 On-Resistance Variation with Gate-to-Source Voltage. , On-resistance(Ω) R , Normalized Drain-source on-resistance ID= -4A VGS= -4.5V 1.2 0.7 -50 3 -ID, Drain Current(A) On-Resistance Variation with Temperature. 1.3 -3.5V 1 -VGS, Drain to Source Voltage(V) 1.4 -3.0V 1.2 10 Body Diode Forword Voltage Variation with Source Current and Temperature. VGS= 0V 1 TA= 125°C 0.1 4-3 3 -55° C 0.6 0.8 0.01 0.001 0.0001 0 2.5 25°C 0.2 0.4 1 VSD, Body Diode Forward Voltage(V) 1.2 Jul-20-2006 P6403FMG P-Channel Logic Level Enhancement Mode Field Effect Transistor Single P-channel MOSFET NIKO-SEM SOT-23 Lead-Free ELM33413CA-S Capacitance Characteristics 5 ID = -4A 1400 VDS= -10V f = 1MHz VGS= 0 V 1200 4 -15V 3 2 1 Capacitance(pF) -VGS, Gate-Source Voltage (V) Gate-Charge Characteristics 1000 Ciss 800 600 400 Coss 200 0 0 0 2 4 6 8 10 12 Crss 0 20 30 25 Single Pulse Maximum Power Dissipation. Maxmum Safe Operating Area. 100 50 RDS(ON) LIMIT 1ms 100ms 1s 1 0.1 0.01 0.1 10ms 30 20 DC VGS =-10V SINGLE PULSE RθJA=100°C/W TA=25°C SINGLE PULSE RθJA=100°C/W TA=25°C 40 100μs Power(W) ID,Drain Current(A) 15 -VDS, Drain to Source Voltage (V) Qg Gate Charge(nC) 10 10 5 10 10 1 100 0 0.001 0.01 -VDS,Drain-Source Voltage(V) 10 0.1 1 Single Pulse Time(SEC) 100 1 0.5 D=0.5 0.2 0.1 0.05 0.02 0.01 0.2 RθJA(t) = r(t) * RθJA RθJA=100°C/W 0.1 0.05 0.02 0.01 P(pk) r(t), Normalized Effective Transient Thermal Resistance Transisent Thermal Response Curve. t1 Single Pulse t2 0.005 TJ-TA=P*RθJA(t) Duty Cycle, D= t1/ t2 0.002 0.001 0.0001 0.001 0.01 0.1 t1 Time(SEC) 4-4 4 1 10 100 300 Jul-20-2006