Single P-channel MOSFET ELM33413CA-S ■General description ■Features ELM33413CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • Vds=-30V Id=-4A Rds(on) < 64mΩ (Vgs=-4.5V) Rds(on) < 80mΩ (Vgs=-2.5V) Rds(on) < 120mΩ (Vgs=-1.8V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Symbol Vds Vgs Limit -30 ±12 Unit V V Id -4.0 -3.0 A Idm Ta=25°C Ta=70°C Power dissipation Junction and storage temperature range -20 1.25 0.80 Pd Tj, Tstg Note A 3 W -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Steady-state Symbol Typ. Max. Unit Rθja 75 100 °C/W ■Pin configuration ■Circuit SOT-23(TOP VIEW) 3 1 Note 2 D Pin No. 1 2 Pin name GATE SOURCE 3 DRAIN G S 4-1 Single P-channel MOSFET ELM33413CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition Min. BVdss Vgs=0V, Id=-250μA -30 Zero gate voltage drain current Idss Vds=-24V, Vgs=0V Vds=-20V, Vgs=0V, Tj=125°C Gate-body leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Static drain-source on-resistance Ta=25°C Typ. Max. Unit Note V -1 -10 μA ±100 nA -0.45 -0.80 -1.20 -20 V A Vgs=-4.5V, Id=-4A 55 64 mΩ Rds(on) Vgs=-2.5V, Id=-3A Vgs=-1.8V, Id=-2A 62 90 80 120 mΩ mΩ 1 S 1 -1.2 -1.6 V A 1 -3 A 3 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V Forward transconductance Gfs Vds=-5V, Id=-4A Diode forward voltage Max. body-diode continuous current Vsd Is Is=-1A, Vgs=0V Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance Ism 12 1 Ciss 950 pF Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Coss Vgs=0V, Vds=-15V, f=1MHz Crss 115 75 pF pF Total gate charge Gate-source charge Gate-drain charge Qg Qgs Qgd 9.4 2.0 3.0 nC nC nC 2 2 2 Vgs=-4.5V, Vds=-15V Id=-4A Turn-on delay time Turn-on rise time td(on) tr Vgs=-4.5V, Vds=-10V 6.3 3.2 ns ns 2 2 Turn-off delay time Turn-off fall time td(off) Id≈-1A, Rgen=6Ω tf 38.0 12.0 ns ns 2 2 NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 P6403FMG P-Channel Logic Level Enhancement Single MOSFET ModeP-channel Field Effect Transistor NIKO-SEM SOT-23 Lead-Free ELM33413CA-S ■Typical electrical and thermal characteristics Typical Electrical Characteristics ID, Drain current(A) -3.0V -2.5V VGS= -4.5V -3.5V 12 R , Normrlized Drain-source on-resistance On-Region Characteristics. 15 9 DS(ON) -2.0V 6 3 -1.5V 0 0 1 2 3 2 1.6 -2.5V 1.4 1 ID= -4A VGS= -4.5V 1.1 1 DS(ON) -4.5V 0.8 0 3 -25 0 0.14 0.1 TA= 125°C TA= 25°C 0.06 25 50 75 100 125 0.02 150 1 Is, Reverse Drain Current (A) TA= -55°C 8 25°C 125°C 6 4 2 1 1.5 2 VGS, Gate to Source Voltage(V) 2 3 4 5 -VGS, Gate to Source Voltage(V) Transfer Characteristics. VDS= -5V ID, Drain Current(A) 15 ID= -2A 0.18 TJ, Junction Temperature(°C) 0.5 12 R 0.8 0 9 0.22 DS(ON) 0.9 10 6 On-Resistance Variation with Gate-to-Source Voltage. , On-resistance(�) R , Normalized Drain-source on-resistance -3.5V -ID, Drain Current(A) 1.2 0.7 -50 -3.0V 1.2 4 On-Resistance Variation with Temperature. 1.3 VGS= -2.0V 1.8 -VGS, Drain to Source Voltage(V) 1.4 On-Resistance Variation with Drain Current and Gate Voltage. 10 Body Diode Forword Voltage Variation with Source Current and Temperature. VGS= 0V 1 TA= 125°C 0.1 4-3 3 -55° C 0.6 0.8 0.01 0.001 0.0001 0 2.5 25°C 0.2 0.4 1 VSD, Body Diode Forward Voltage(V) 1.2 Jul-20-2006 P6403FMG P-Channel Logic Level Enhancement Mode Field Effect Transistor Single P-channel MOSFET NIKO-SEM SOT-23 Lead-Free ELM33413CA-S Capacitance Characteristics 5 ID = -4A 1400 VDS= -10V f = 1MHz VGS= 0 V 1200 4 -15V 3 2 1 Capacitance(pF) -VGS, Gate-Source Voltage (V) Gate-Charge Characteristics 1000 Ciss 800 600 400 Coss 200 0 0 0 2 4 6 8 10 12 Crss 0 20 30 25 Single Pulse Maximum Power Dissipation. Maxmum Safe Operating Area. 100 50 RDS(ON) LIMIT 1ms 100ms 1s 1 0.1 0.01 0.1 10ms 30 20 DC VGS =-10V SINGLE PULSE R�JA=100°C/W TA=25°C SINGLE PULSE R�JA=100°C/W TA=25°C 40 100�s Power(W) ID,Drain Current(A) 15 -VDS, Drain to Source Voltage (V) Qg Gate Charge(nC) 10 10 5 10 10 1 100 0 0.001 0.01 -VDS,Drain-Source Voltage(V) 0.1 1 10 Single Pulse Time(SEC) 100 1 0.5 D=0.5 0.2 0.1 0.05 0.02 0.01 0.2 R�JA(t) = r(t) * R��� R�JA=100°C/W 0.1 0.05 0.02 0.01 P(pk) r(t), Normalized Effective Transient Thermal Resistance Transisent Thermal Response Curve. t1 Single Pulse t2 0.005 TJ-TA=P*R�JA(t) Duty Cycle, D= t1/ t2 0.002 0.001 0.0001 0.001 0.01 0.1 t1 Time(SEC) 4-4 4 1 10 100 300 Jul-20-2006