Single N-channel MOSFET ELM33400CA-S ■General description ■Features ELM33400CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • Vds=30V Id=6A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 32mΩ (Vgs=4.5V) Rds(on) < 52mΩ (Vgs=2.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note ±12 V Symbol Vgs Gate-source voltage Ta=25°C Ta=70°C Continuous drain current 6 5 30 Id Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg A A 1.25 3 W 0.80 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Steady-state Symbol Typ. Max. Unit Rθja 75 100 °C/W ■Pin configuration ■Circuit D SOT-23(TOP VIEW) 3 1 2 Note Pin No. Pin name 1 2 3 GATE SOURCE DRAIN G S 4- 1 Single N-channel MOSFET ELM33400CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Gate threshold voltage On state drain current Static drain-source on-resistance Condition Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note 30 V Vds=24V, Vgs=0V 1 Vds=20V, Vgs=0V, Ta=70°C 10 Vds=0V, Vgs=±12V Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V 0.7 30 1.1 μA ±100 nA 1.4 V A 1 Vgs=10V, Id=6A 23 28 mΩ Rds(on) Vgs=4.5V, Id=5A 27 32 mΩ 1 43 15 52 mΩ S 1 1.3 V 1 1.3 30 A A 3 Forward transconductance Gfs Vgs=2.5V, Id=4A Vds=5V, Id=5A Diode forward voltage Vsd If=Is, Vgs=0V Max. body-diode continuous current Pulsed body-diode current DYNAMIC PARAMETERS Is Ism Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Gate-source charge Gate-drain charge Qgs Qgd Turn-on delay time Turn-on rise time td(on) Turn-off delay time Turn-off fall time td(off) Rgen=0.2Ω tf 740 90 pF pF Crss 66 pF Qg 8.0 tr Vgs=0V, Vds=10V, f=1MHz Vgs=4.5V, Vds=15V, Id=5A Vgs=4.5V, Vds=10V, Id=1A NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4- 2 12.0 3.6 2.0 nC 2 nC nC 2 2 8 14 ns 2 6 12 ns 2 19 7 45 23 ns ns 2 2 P3203CMG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM SOT-23 Single N-channel MOSFET Lead-Free ELM33400CA-S ■Typical electrical and thermal characteristics 10V R , Normalized Drain-source on-resistance 25 3V 20 4.5V 2.5V 15 10 DS(ON) ID, Drain current(A) On-Resistance Variation with Drain Current and Gate Voltage. On-Region Characteristics. VGS=2V 5 0 0 2 3 4 VGS, Gate to Source Voltage(V) VGS= 2.5V 2 1.75 1.5 4.5V 1.25 10V 1 0.75 5 1 2.25 0 4 ID= 5A VGS= 4.5V 1 0.8 12 8 125° C 25° C 4 -25 0 25 50 75 100 125 0 150 Is, Reverse Drain Current (A) ID=5A 125° C 0.04 0.03 25° C 0.02 0 2 4 6 8 VGS, Gate to Source Voltage(V) 0.5 1 2.5 2 1.5 3 Body Diode Forword Voltage Variation with Source Current and Temperature. 0.06 0.05 0 V GS , Gate to Source Voltage(V) On-Resistance Variation with Gate-to-Source Voltage. 0.07 20 V DS =5V 15 TJ, Junction Temperature(°C) 0.01 16 Transfer Characteristics. 1.2 0.6 -50 12 20 ID, Drain Current(A) 1.4 RDS(ON), On-resistance(� ) DS(ON) R , Normalized Drain-source on-resistance On-Resistance Variation with Temperature. 1.6 8 ID, Drain Current(A) 100 10 3 4- 3 TA= 125°C 1 -55°C 25°C 0.1 0.01 0.001 0.0001 0 10 VGS= 0V 0.2 0.4 0.6 0.8 1 VSD, Body Diode Forward Voltage(V) 1.2 Mar-22-2006 P3203CMG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM SOT-23 Lead-Free Single N-channel MOSFET ELM33400CA-S Gate-Charge Characteristics Capacitance Characteristics 1100 VGS, Gate-Source Voltage(V) 5 VDS= 5V ID = 5A f =1MHz VGS=0 V 900 Capacitance(pF) 4 10V 3 2 1 Ciss 700 500 300 Coss Crss 100 0 0 2 4 6 8 0 10 Qg Gate Charge (nC) 0 12 16 20 VDS, Drain to Source Voltage(V) Maxmum Safe Operating Area. Single Puise Maximum Power Dissipation. 100 20 RDS(ON) LIMIT 1ms 10 10ms 100ms 1 10s DC 1s VGS =4.5V SINGLE PULSE R� JA=100°C/W TA=25°C 0.1 0.01 0.1 SINGLE PULSE R� JA=100°C/W TA=25° C 15 Power (W) ID,Drain Current(A) 8 4 12 8 4 1 10 0 100 0.0001 VGS,Drain-Source Voltage(V) 0.001 0.01 0.1 10 1 100 1000 Single Pulse Time(SEC) 1 0.5 D=0.5 0.2 0.1 0.05 0.02 0.01 0.2 R¿ JA(t) = r(t) * R¿ R¿ JA=100° C/W 0.1 0.05 0.02 0.01 t1 Single Pulse t2 0.005 TJ-TA=P*R¿ JA(t) Duty Cycle, D= t1/ t2 0.002 0.001 0.0001 �� P(pk) r(t), Normalized Effective Transient Thermal Resistance Transisent Thermal Response Curve. 0.001 0.01 0.1 Time(SEC) 4 4- 4 1 10 100 Mar-22-2006 300