Single P-channel MOSFET ELM2H401SA-S ■General description ■Features ELM2H401SA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. The package is SOT-723. • • • • • • ■Application • • • • Notebook Load Switch Baterry Protection Hand-held instruments ■Maximum absolute ratings Parameter Drain-source voltage Symbol Vds Gate-source voltage Vgs Ta=25°C Continuous drain current Pulsed drain current 1 Power dissipation Ta=25°C. Unless otherwise noted. Limit Unit -20 V ±8 -400 Id Ta=100°C V mA Idm Pd -250 -1.6 450 A mW Tj, Tstg -55 to 150 °C Tc=25°C Junction and storage temperature range Vds=-20V Id=-0.4A Rds(on) < 650mΩ (Vgs=-4.5V) Rds(on) < 900mΩ (Vgs=-2.5V) Rds(on) < 1400mΩ (Vgs=-1.8V) Rds(on) < 2300mΩ (Vgs=-1.5V) ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Typ. Max. Unit 280 °C/W Rθja ■Pin configuration ■Circuit SOT-723(TOP VIEW) 3 1 2 D Pin No. 1 2 Pin name GATE SOURCE 3 DRAIN G S 4-1 Single P-channel MOSFET ELM2H401SA-S ■Electrical characteristics Parameter Symbol Condition Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current Gate threshold voltage Static drain-source on-resistance Max. body-diode continuous current BVdss Id=-250μA, Vgs=0V Idss -1 Vds=-16V, Vgs=0V, Ta=125°C -10 μA -0.7 ±20 -1.0 Vgs=-4.5V, Id=-0.3A Vgs=-2.5V, Id=-0.2A Rds(on) Vgs=-1.8V, Id=-0.1A 500 700 1100 650 900 1400 Vgs=-1.5V, Id=-0.1A 1700 2300 -0.4 A -0.8 -1 A V 40.0 15.0 6.5 78.0 30.0 13.0 pF pF pF 1.00 2.00 nC 0.28 0.18 0.50 0.40 nC nC 8.0 5.2 30.0 16.0 10.0 60.0 ns ns ns 18.0 36.0 ns Is Ism Vsd Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge 2, 3 Ciss Coss Crss Gate-source charge Gate-drain charge 2, 3 Turn-on delay time 2, 3 Qgs Qgd Turn-on rise time 2, 3 Turn-off delay time 2, 3 Turn-off fall time 2, 3 V Vds=-20V, Vgs=0V, Ta=25°C Igss Vds=0V, Vgs=±8V Vgs(th) Vds=Vgs, Id=-250μA Pulsed source current Diode forward voltage DYNAMIC PARAMETERS 2, 3 -20 Qg -0.3 Vgs=Vds=0 Is=-0.2A, Vgs=0V Vgs=0V, Vds=-10V, f=1MHz Vgs=-4.5V, Vds=-10V Id=-0.2A td(on) tr Vgs=-4.5V, Vds=-10V td(off) Id=-0.2A, Rgen=10Ω tf NOTE : 1. Repetitive Rating: Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%. 3. Essentially independent of operating temperature. 4-2 μA V mΩ Single P-channel MOSFET ELM2H401SA-S PM2119EUX Normalized On Resistance (m) -ID , Continuous Drain Current (A) ■Typical electrical and thermal characteristics 20V P-Channel MOSFETs TJ , Junction Temperature (℃) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Qg , Gate Charge (nC) TJ , Junction Temperature ((℃) Normalized Vth vs. TJ Fig.4 Fig.5 Gate Charge Waveform -ID , Continuous Drain Current (A) Normalized Thermal Response (RΘJA) Fig.3 Normalized RDSON vs. TJ -VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) Fig.1 -V VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (s) Normalized Transient Response Fig.6 Powemate Electronics Corp Maximum Safe Operation Area Ver.1.00 4-3 3 Single P-channel MOSFET ELM2H401SA-S PM2119EUX 20V P-Channel MOSFETs -VDS 90% 10% -VGS Td(on) Tr Ton Fig.7 Td(off) Tf Toff Switching Time Waveform Fig.8 Powemate Electronics Corp Gate Charge Waveform Ver.1.00 4 4-4