SPP2327 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2327 is the P-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPP2327 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS Powered System DC/DC Converter Load Switch FEATURES -110V/-1.0A, RDS(ON)= 650mΩ@VGS= -10V -110V/-0.5A, RDS(ON)= 750mΩ@VGS= -4.5V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-6L package design PIN CONFIGURATION(SOT-23-6L) PART MARKING 2013/09/08 Ver.1 Page 1 SPP2327 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 D Drain 2 D Drain 3 G Gate 4 S Source 5 D Drain 6 D Drain ORDERING INFORMATION Part Number Package SPP2327S26RGB SOT-23-6L Part Marking 27YW ※ SPP2327S26RGB : Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -110 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operating Junction Temperature ID IDM TA=25℃ TA=70℃ PD -1.5 -1.2 -4.5 1.15 0.8 A A W TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 ℃/W 2013/09/08 Ver.1 Page 2 SPP2327 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. -1.5 -2.5 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current Drain-Source On-Resistance ID(on) RDS(on) -110 -1 VDS=0V,VGS=±20V VDS=-80V,VGS=0V, TJ=25℃ VDS=-80V,VGS=0V TJ=55℃ VDS=VGS =0V ±100 V nA 10 uA 100 - -1.5 A VGS= -10V,ID=-1A 0.52 0.65 Ω VGS= -4.5V,ID=-0.5A 0.6 0.75 Ω 2.9 Forward Transconductance gfs VDS=-10V,ID=-1A Diode Forward Voltage VSD IS=-1A,VGS =0V S -1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 2013/09/08 Ver.1 VDS=-50V,VGS=-10V ID=-1A VDS=-15,VGS=0V f=1MHz td(off) tf 1.75 nC 1.25 553 pF 29 20 2 td(on) tr 9.3 VDD=-50V, ID=-0.5A, VGS=-10V, RG=3.3Ω 18.4 nS 19.6 19.5 Page 3 SPP2327 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig 1 Output Characteristics Fig. 2 On-Resistance vs Gate Source Voltage Fig 3 Source-Drain Forward Voltage Fig. 4 Gate Charge Fig. 5 Gate Voltage vs Junction temperature 2013/09/08 Ver.1 Fig. 6 On-Resistance vs Junction Temperature Page 4 SPP2327 P-Channel Enhancement Mode MOSFET SOT-23-6L PACKAGE OUTLINE 2013/09/08 Ver.1 Page 5 SPP2327 P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2013 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2013/09/08 Ver.1 Page 6