Single P-channel MOSFET ELM32407LA-S ■General description ■Features ELM32407LA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-40V Id=-18A Rds(on) < 25.8mΩ (Vgs=-10V) Rds(on) < 40.0mΩ (Vgs=-7V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note -40 V ±20 V Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current -18.0 -13.5 -40 Id Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg A A 42 3 W 27 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Symbol Steady-state Steady-state Rθjc Rθja ■Pin configuration Typ. Max. Unit 3 75 °C/W °C/W Note ■Circuit TO-252-3(TOP VIEW) D TAB 2 1 Pin No. 1 Pin name GATE 2 3 DRAIN SOURCE 3 4-1 G S Single P-channel MOSFET ELM32407LA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current Symbol Condition BVdss Id=-250μA, Vgs=0V Idss Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note -40 V Vds=-32V, Vgs=0V Vds=-30V, Vgs=0V, Ta=125°C Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage Vgs(th) Vds=Vgs, Id=-250μA -1.2 On state drain current Id(on) Vgs=-10V, Vds=-5V -40 Vgs=-10V, Id=-18A Static drain-source on-resistance Rds(on) Vgs=-7V, Id=-10A Forward transconductance Gfs Vds=-5V, Id=-18A Diode forward voltage Vsd Is=If, Vgs=0V Max. body-diode continuous current Is Pulsed body-diode current Ism DYNAMIC PARAMETERS Input capacitance Ciss Output capacitance Coss Vgs=0V, Vds=-15V, f=1MHz Reverse transfer capacitance Crss SWITCHING PARAMETERS Total gate charge Qg Vgs=-10V, Vds=-20V Gate-source charge Qgs Id=-18A Gate-drain charge Qgd Turn-on delay time td(on) Turn-on rise time tr Vgs=-10V, Vds=-20V Turn-off delay time td(off) Id=-1A, RL=1Ω, Rgen=6Ω Turn-off fall time tf Body diode reverse recovery time trr If=-18A, dIf/dt=100A/μs Body diode reverse recovery charge Qrr NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 -1 -10 -2.2 μA ±250 nA -3.0 V A 1 mΩ 1 -1.3 S V 1 1 -18 A -40 A 22.0 25.8 30.0 40.0 20 3 1570 pF 320 210 pF pF 29 6 nC nC 2 2 7 12 nC ns 2 2 29 ns 2 42 ns 2 33 29 ns ns 2 21 nC NIKO-SEM P-Channel Logic Level Enhancement P2504EDG Mode Field Effect Transistor Single P-channel MOSFET TO-252 Lead-Free ELM32407LA-S ■Typical electrical and thermal characteristics Body Diode Forward Voltage Variation with Source Current and Temperature 100 -Is - Reverse Drain Current(A) V GS= 0V 10 1 0.1 TA = 125°C 25°C -55°C 0.01 0.001 0 3 4-3 0.8 1.0 1.2 0.2 0.4 0.6 -VSD- Body Diode Forward Voltage(V) 1.4 MAR-29-2006 NIKO-SEM Single P-channel MOSFET P-Channel Logic Level Enhancement Mode Field Effect Transistor ELM32407LA-S 4 4-4 P2504EDG TO-252 Lead-Free MAR-29-2006