elm14606aa

Complementary MOSFET
ELM14606AA-N
■General Description
■Features
ELM14606AA-N uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
•
•
•
•
N-channel
P-channel
Vds=30V
Id=6.9A(Vgs=10V)
Rds(on) < 28mΩ(Vgs=10V)
Rds(on) < 42mΩ(Vgs=4.5V)
Vds=-30V
Id=-6A(Vgs=-10V)
Rds(on) < 35mΩ(Vgs=-10V)
Rds(on) < 58mΩ(Vgs=-4.5V)
■Maximum Absolute Ratings
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Vds
30
-30
V
Vgs
±20
6.9
±20
-6.0
V
5.8
-5.0
30
-30
Iar
2.00
1.44
15
2.00
1.44
20
Ear
11
Tj,Tstg
-55 to 150
Ta=25°C
Ta=70°C
Continuous drain current
Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit Note
Id
Pulsed drain current
Idm
Tc=25°C
Tc=70°C
Power dissipation
Pd
Avalanche current
Repetitive avalanche energy 0.1mH
Junction and storage temperature range
A
1
A
2
W
A
2
20
mJ
2
-55 to 150
°C
■Thermal Characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Symbol
t≤10s
Steady-state
Maximum junction-to-lead
Maximum junction-to-ambient
Maximum junction-to-ambient
Steady-state
t≤10s
Steady-state
Maximum junction-to-lead
Steady-state
Rθja
1
8
2
7
3
6
4
5
Max.
62.5
110.0
Unit
°C/W
°C/W
Note
N-ch
Typ.
48.0
74.0
40.0
62.5
110.0
°C/W
°C/W
°C/W
3
P-ch
35.0
48.0
74.0
35.0
40.0
°C/W
3
Rθjl
Rθja
Rθjl
■Pin configuration
SOP-8(TOP VIEW)
Device
1
1
■Circuit
Pin No.
1
2
Pin name
SOURCE2
GATE2
3
4
SOURCE1
GATE1
5
6
7
DRAIN1
DRAIN1
DRAIN2
8
DRAIN2
7-1
• N-ch
• P-ch
D1
D2
G1
G2
S2
S1
Complementary MOSFET
ELM14606AA-N
■Electrical Characteristics (N-ch)
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit
Conditions
BVdss Id=250μA, Vgs=0V
Idss
Vds=24V, Vgs=0V
30
0.002
Ta=55°C
Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA
1.0
On state drain current
Id(on) Vgs=4.5V, Vds=5V
20
Static drain-source on-resistance
Rds(on)
Gfs
Vsd
Is
Ta=125°C
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Crss
Rg
Total gate charge (4.5V)
Qg
Qgs
Qgd
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Vds=5V, Id=6.9A
Is=1A
1.9
10.0
100
3.0
μA
nA
V
A
22.5
31.3
34.5
Vgs=4.5V, Id=5.0A
Forward transconductance
Diode forward voltage
Max.body-diode continuous current
DYNAMIC PARAMETERS
1.000
5.000
Gate-body leakage current
Gate threshold voltage
Vgs=10V, Id=6.9A
V
15.4
0.76
28.0
38.0
42.0
1.00
3
S
V
A
Vgs=0V, Vds=15V, f=1MHz
680
102
Vgs=0V, Vds=0V, f=1MHz
77
3.0
3.6
pF
Ω
13.84
16.60
nC
6.74
1.82
3.20
8.10
nC
nC
nC
4.6
4.1
20.6
7.0
6.0
30.0
ns
ns
ns
8.0
20.0
ns
ns
10.0
nC
Qg
Vgs=10V, Vds=15V, Id=6.9A
td(on)
tr
Vgs=10V, Vds=15V
td(off) RL=2.2Ω, Rgen=3Ω
Turn-off fall time
Body-diode reverse recovery time
tf
trr
If=6.9A, dIf/dt=100A/μs
5.2
16.5
Body-diode reverse recovery charge
Qrr
If=6.9A, dIf/dt=100A/μs
7.8
820
mΩ
pF
pF
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
7-2
Complementary MOSFET
AO4606
ELM14606AA-N
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
■Typical Electrical and Thermal Characteristics (N-ch)
10V
25
20
6V
5V
4.5V
Id (A)
20
15
3.5V
10
Vgs=3V
5
Vds=5V
16
4V
Id (A)
30
12
8
125°C
4
25°C
0
0
0
1
2
3
4
0
5
0.5
2
2.5
3
3.5
4
4.5
1.6
Normalized On-Resistance
60
50
Rds(on) (m� )
1.5
Vgs (Volts)
Figure 2: Transfer Characteristics
Vds (Volts)
Fig 1: On-Region Characteristics
Vgs=4.5V
40
30
20
Vgs=10V
10
0
5
10
15
1.5
Vgs=10V
Id=5A
1.4
Vgs=4.5V
1.3
1.2
1.1
1
0.9
0.8
20
0
Id (Amps)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
100
150
200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
70
60
1.0E+00
Id=5A
50
Is Amps
Rds(on) (m� )
1
125°C
40
1.0E-01
1.0E-02
125°C
1.0E-03
30
25°C
20
25°C
1.0E-04
1.0E-05
0.0
10
2
4
6
8
10
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
7-3
0.2
0.4
0.6
0.8
Vsd (Volts)
Figure 6: Body diode characteristics
1.0
Complementary MOSFET
AO4606
ELM14606AA-N
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
f=1MHz
Vgs=0V
900
800
Capacitance (pF)
8
Vgs (Volts)
1000
Vds=15V
Id=6.9A
6
4
2
700
Ciss
600
500
400
300
200
Coss
100
0
0
2
4
6
8
10
12
Crss
0
14
0
Qg (nC)
Figure 7: Gate-Charge characteristics
100
0.1s
1s
DC
1
0.1
Vds (Volts)
10
Z �ja Normalized Transient
Thermal Resistance
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=62.5°C/W
30
20
0
0.001
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
25
10
10s
0.1
20
Tj(max.)=150°C
Ta=25°C
30
10�s
10ms
1
15
40
Power W
Id (Amps)
100�s
1ms
10
10
Vds (Volts)
Figure 8: Capacitance Characteristics
Tj(max.)=150°C
Ta=25°C
Rds(on)
limited
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
7-4
100
1000
Complementary MOSFET
ELM14606AA-N
■Electrical Characteristics (P-ch)
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit
Conditions
BVdss Id=-250μA, Vgs=0V
Idss
-30
-0.003 -1.000
Vds=-24V, Vgs=0V
Ta=55°C
-5.000
Gate-body leakage current
Gate threshold voltage
Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=-250μA
-1.2
On state drain current
Id(on) Vgs=-10V, Vds=-5V
-30
Static drain-source on-resistance
Rds(on)
Vgs=-10V, Id=-6A
Ta=125°C
Vgs=-4.5V, Id=-5A
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Gfs
Vsd
Is
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Crss
Rg
Total gate charge (4.5V)
Qg
Qgs
Qgd
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
V
-2.0
±100
-2.4
μA
nA
V
A
28
37
44
35
45
58
mΩ
Vds=-5V, Id=-6A
Is=-1A, Vgs=0V
13
-0.76
Vgs=0V, Vds=-15V, f=1MHz
920
190
Vgs=0V, Vds=0V, f=1MHz
122
3.6
4.4
pF
Ω
18.5
22.2
nC
9.6
2.7
4.5
11.6
nC
nC
nC
7.7
5.7
20.2
11.5
8.5
30.0
ns
ns
ns
14.0
24.0
ns
ns
15.0
nC
Qg
Vgs=-10V, Vds=-15V, Id=-6A
td(on)
tr
Vgs=-10V, Vds=-15V
td(off) RL=2.7Ω, Rgen=3Ω
tf
trr
If=-6A, dIf/dt=100A/μs
9.5
20.0
Qrr
If=-6A, dIf/dt=100A/μs
12.3
-1.00
-4.2
1100
S
V
A
pF
pF
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
7-5
Complementary MOSFET
AO4606
ELM14606AA-N
■Typical Electrical and Thermal Characteristics (P-ch)
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
-10V
25
Vds=-5V
25
20
20
-4V
-Id (A)
-Id (A)
30
-4.5V
-6V
-5V
15
-3.5V
10
5
15
10
125°C
5
Vgs=-3V
0
0
0
1
2
3
4
5
0
0.5
-Vds (Volts)
Fig 1: On-Region Characteristics
1.5
2
2.5
3
3.5
4
4.5
5
1.60
Vgs=-4.5V
50
Id=-6A
Normalized On-Resistance
55
Rds(on) (m� )
1
-Vgs (Volts)
Figure 2: Transfer Characteristics
60
1.40
45
40
Vgs=-10V
1.20
35
Vgs=-10V
30
25
Vgs=-4.5V
1.00
20
15
0.80
10
0
5
10
15
20
0
25
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
80
1.0E+01
70
1.0E+00
Id=-6A
60
1.0E-01
50
125°C
1.0E-02
-Is (A)
Rds(on) (m� )
25°C
125°C
40
1.0E-03
30
25°C
1.0E-04
20
25°C
1.0E-05
10
1.0E-06
0
3
4
5
6
7
8
9
10
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
7-6
0.0
0.2
0.4
0.6
0.8
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
1.0
Complementary MOSFET
AO4606
ELM14606AA-N
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1250
Capacitance (pF)
8
-Vgs (Volts)
1500
Vds=-15V
Id=-6A
6
4
Ciss
1000
2
750
500
Coss
0
0
4
8
12
16
0
20
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
10�s
100�s
Rds(on)
limited
0.1s
1ms
1s
1
-Vds (Volts)
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z� ja Normalized Transient
Thermal Resistance
25
30
Tj(max.)=150°C
Ta=25°C
20
DC
0.1
10
20
10
10s
0.1
15
30
10ms
1.0
10
40
Tj(max.)=150°C, Ta=25°C
10.0
5
-Vds (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-Id (Amps)
Crss
250
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=62.5°C/W
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
0.01
T
7-7
100
1000