Complementary MOSFET ELM14606AA-N ■General Description ■Features ELM14606AA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • N-channel P-channel Vds=30V Id=6.9A(Vgs=10V) Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 42mΩ(Vgs=4.5V) Vds=-30V Id=-6A(Vgs=-10V) Rds(on) < 35mΩ(Vgs=-10V) Rds(on) < 58mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Symbol Drain-source voltage Gate-source voltage Vds 30 -30 V Vgs ±20 6.9 ±20 -6.0 V 5.8 -5.0 30 -30 Iar 2.00 1.44 15 2.00 1.44 20 Ear 11 Tj,Tstg -55 to 150 Ta=25°C Ta=70°C Continuous drain current Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit Note Id Pulsed drain current Idm Tc=25°C Tc=70°C Power dissipation Pd Avalanche current Repetitive avalanche energy 0.1mH Junction and storage temperature range A 1 A 2 W A 2 20 mJ 2 -55 to 150 °C ■Thermal Characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Symbol t≤10s Steady-state Maximum junction-to-lead Maximum junction-to-ambient Maximum junction-to-ambient Steady-state t≤10s Steady-state Maximum junction-to-lead Steady-state Rθja 1 8 2 7 3 6 4 5 Max. 62.5 110.0 Unit °C/W °C/W Note N-ch Typ. 48.0 74.0 40.0 62.5 110.0 °C/W °C/W °C/W 3 P-ch 35.0 48.0 74.0 35.0 40.0 °C/W 3 Rθjl Rθja Rθjl ■Pin configuration SOP-8(TOP VIEW) Device 1 1 ■Circuit Pin No. 1 2 Pin name SOURCE2 GATE2 3 4 SOURCE1 GATE1 5 6 7 DRAIN1 DRAIN1 DRAIN2 8 DRAIN2 7-1 • N-ch • P-ch D1 D2 G1 G2 S2 S1 Complementary MOSFET ELM14606AA-N ■Electrical Characteristics (N-ch) Parameter STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Conditions BVdss Id=250μA, Vgs=0V Idss Vds=24V, Vgs=0V 30 0.002 Ta=55°C Igss Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=250μA 1.0 On state drain current Id(on) Vgs=4.5V, Vds=5V 20 Static drain-source on-resistance Rds(on) Gfs Vsd Is Ta=125°C Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge (10V) Crss Rg Total gate charge (4.5V) Qg Qgs Qgd Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Vds=5V, Id=6.9A Is=1A 1.9 10.0 100 3.0 μA nA V A 22.5 31.3 34.5 Vgs=4.5V, Id=5.0A Forward transconductance Diode forward voltage Max.body-diode continuous current DYNAMIC PARAMETERS 1.000 5.000 Gate-body leakage current Gate threshold voltage Vgs=10V, Id=6.9A V 15.4 0.76 28.0 38.0 42.0 1.00 3 S V A Vgs=0V, Vds=15V, f=1MHz 680 102 Vgs=0V, Vds=0V, f=1MHz 77 3.0 3.6 pF Ω 13.84 16.60 nC 6.74 1.82 3.20 8.10 nC nC nC 4.6 4.1 20.6 7.0 6.0 30.0 ns ns ns 8.0 20.0 ns ns 10.0 nC Qg Vgs=10V, Vds=15V, Id=6.9A td(on) tr Vgs=10V, Vds=15V td(off) RL=2.2Ω, Rgen=3Ω Turn-off fall time Body-diode reverse recovery time tf trr If=6.9A, dIf/dt=100A/μs 5.2 16.5 Body-diode reverse recovery charge Qrr If=6.9A, dIf/dt=100A/μs 7.8 820 mΩ pF pF NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 7-2 Complementary MOSFET AO4606 ELM14606AA-N N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ■Typical Electrical and Thermal Characteristics (N-ch) 10V 25 20 6V 5V 4.5V Id (A) 20 15 3.5V 10 Vgs=3V 5 Vds=5V 16 4V Id (A) 30 12 8 125°C 4 25°C 0 0 0 1 2 3 4 0 5 0.5 2 2.5 3 3.5 4 4.5 1.6 Normalized On-Resistance 60 50 Rds(on) (m� ) 1.5 Vgs (Volts) Figure 2: Transfer Characteristics Vds (Volts) Fig 1: On-Region Characteristics Vgs=4.5V 40 30 20 Vgs=10V 10 0 5 10 15 1.5 Vgs=10V Id=5A 1.4 Vgs=4.5V 1.3 1.2 1.1 1 0.9 0.8 20 0 Id (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 70 60 1.0E+00 Id=5A 50 Is Amps Rds(on) (m� ) 1 125°C 40 1.0E-01 1.0E-02 125°C 1.0E-03 30 25°C 20 25°C 1.0E-04 1.0E-05 0.0 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 7-3 0.2 0.4 0.6 0.8 Vsd (Volts) Figure 6: Body diode characteristics 1.0 Complementary MOSFET AO4606 ELM14606AA-N N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 f=1MHz Vgs=0V 900 800 Capacitance (pF) 8 Vgs (Volts) 1000 Vds=15V Id=6.9A 6 4 2 700 Ciss 600 500 400 300 200 Coss 100 0 0 2 4 6 8 10 12 Crss 0 14 0 Qg (nC) Figure 7: Gate-Charge characteristics 100 0.1s 1s DC 1 0.1 Vds (Volts) 10 Z �ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=62.5°C/W 30 20 0 0.001 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 25 10 10s 0.1 20 Tj(max.)=150°C Ta=25°C 30 10�s 10ms 1 15 40 Power W Id (Amps) 100�s 1ms 10 10 Vds (Volts) Figure 8: Capacitance Characteristics Tj(max.)=150°C Ta=25°C Rds(on) limited 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 7-4 100 1000 Complementary MOSFET ELM14606AA-N ■Electrical Characteristics (P-ch) Parameter STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Conditions BVdss Id=-250μA, Vgs=0V Idss -30 -0.003 -1.000 Vds=-24V, Vgs=0V Ta=55°C -5.000 Gate-body leakage current Gate threshold voltage Igss Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=-250μA -1.2 On state drain current Id(on) Vgs=-10V, Vds=-5V -30 Static drain-source on-resistance Rds(on) Vgs=-10V, Id=-6A Ta=125°C Vgs=-4.5V, Id=-5A Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Gfs Vsd Is Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge (10V) Crss Rg Total gate charge (4.5V) Qg Qgs Qgd Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge V -2.0 ±100 -2.4 μA nA V A 28 37 44 35 45 58 mΩ Vds=-5V, Id=-6A Is=-1A, Vgs=0V 13 -0.76 Vgs=0V, Vds=-15V, f=1MHz 920 190 Vgs=0V, Vds=0V, f=1MHz 122 3.6 4.4 pF Ω 18.5 22.2 nC 9.6 2.7 4.5 11.6 nC nC nC 7.7 5.7 20.2 11.5 8.5 30.0 ns ns ns 14.0 24.0 ns ns 15.0 nC Qg Vgs=-10V, Vds=-15V, Id=-6A td(on) tr Vgs=-10V, Vds=-15V td(off) RL=2.7Ω, Rgen=3Ω tf trr If=-6A, dIf/dt=100A/μs 9.5 20.0 Qrr If=-6A, dIf/dt=100A/μs 12.3 -1.00 -4.2 1100 S V A pF pF NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 7-5 Complementary MOSFET AO4606 ELM14606AA-N ■Typical Electrical and Thermal Characteristics (P-ch) P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V 25 Vds=-5V 25 20 20 -4V -Id (A) -Id (A) 30 -4.5V -6V -5V 15 -3.5V 10 5 15 10 125°C 5 Vgs=-3V 0 0 0 1 2 3 4 5 0 0.5 -Vds (Volts) Fig 1: On-Region Characteristics 1.5 2 2.5 3 3.5 4 4.5 5 1.60 Vgs=-4.5V 50 Id=-6A Normalized On-Resistance 55 Rds(on) (m� ) 1 -Vgs (Volts) Figure 2: Transfer Characteristics 60 1.40 45 40 Vgs=-10V 1.20 35 Vgs=-10V 30 25 Vgs=-4.5V 1.00 20 15 0.80 10 0 5 10 15 20 0 25 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 80 1.0E+01 70 1.0E+00 Id=-6A 60 1.0E-01 50 125°C 1.0E-02 -Is (A) Rds(on) (m� ) 25°C 125°C 40 1.0E-03 30 25°C 1.0E-04 20 25°C 1.0E-05 10 1.0E-06 0 3 4 5 6 7 8 9 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 7-6 0.0 0.2 0.4 0.6 0.8 -Vsd (Volts) Figure 6: Body-Diode Characteristics 1.0 Complementary MOSFET AO4606 ELM14606AA-N P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1250 Capacitance (pF) 8 -Vgs (Volts) 1500 Vds=-15V Id=-6A 6 4 Ciss 1000 2 750 500 Coss 0 0 4 8 12 16 0 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10�s 100�s Rds(on) limited 0.1s 1ms 1s 1 -Vds (Volts) 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) Z� ja Normalized Transient Thermal Resistance 25 30 Tj(max.)=150°C Ta=25°C 20 DC 0.1 10 20 10 10s 0.1 15 30 10ms 1.0 10 40 Tj(max.)=150°C, Ta=25°C 10.0 5 -Vds (Volts) Figure 8: Capacitance Characteristics Power (W) -Id (Amps) Crss 250 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=62.5°C/W 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 T 7-7 100 1000