AOSMD AO4606

Feb 2003
AO4606
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
n-channel
VDS (V) = 30V
ID = 6.9A
RDS(ON)
< 28mΩ (VGS=10V)
< 42mΩ (VGS=4.5V)
The AO4606 uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
to form a level shifted high side switch,
and for a host of other applications.
p-channel
-30V
-6A
RDS(ON)
< 35mΩ (VGS = 10V)
< 58mΩ (VGS = 4.5V)
D1
D2
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
G2
S1
S2
SOIC-8
p-channel
n-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
VDS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
Pulsed Drain Current
TA=70°C
B
TA=25°C
Power Dissipation
±20
6.9
-6
ID
5.8
-5
IDM
30
-30
2
2
TA=70°C
1.44
1.44
Junction and Storage Temperature Range
-55 to 150
-55 to 150
PD
TJ, TSTG
Thermal Characteristics: n-channel and p-channel
Parameter
t ≤ 10s
Maximum Junction-to-Ambient A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
A
t ≤ 10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
Typ
48
74
35
p-ch
p-ch
p-ch
48
74
35
Units
V
V
±20
TA=25°C
Continuous Drain
Current A
Max p-channel
-30
A
W
°C
Max Units
62.5 °C/W
110 °C/W
60 °C/W
62.5
110
40
°C/W
°C/W
°C/W
AO4606
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
20
TJ=55°C
5
VGS=10V, ID=6.9A
TJ=125°C
VGS=4.5V, ID=5.0A
gFS
Forward Transconductance
VSD
IS=1A
Diode Forward Voltage
Maximum Body-Diode Continuous Current
IS
VDS=5V, ID=6.9A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=6.9A
10
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=24V, VGS=0V
IDSS
RDS(ON)
Typ
µA
100
nA
1.9
3
V
22.5
28
31.3
38
34.5
42
A
15.4
0.76
mΩ
mΩ
S
1
V
3
A
680
pF
102
pF
77
pF
3
Ω
13.84
nC
6.74
nC
Qgs
Gate Source Charge
1.82
nC
Qgd
Gate Drain Charge
3.2
nC
tD(on)
Turn-On DelayTime
4.6
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN=3Ω
4.1
ns
20.6
ns
5.2
ns
IF=6.9A, dI/dt=100A/µs
16.5
Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs
7.8
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4606
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.2
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
30
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-6A
TJ=125°C
VGS=-4.5V, ID=-5A
Forward Transconductance
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
VDS=-5V, ID=-6A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs
Gate Source Charge
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-6A
µA
-5
IGSS
gFS
Units
-1
TJ=55°C
VSD
Max
V
VDS=-24V, VGS=0V
VGS(th)
IS
Typ
-2
±100
nA
-2.4
V
A
28
35
37
45
44
58
mΩ
mΩ
13
-0.76
S
-1
V
-4.2
A
920
pF
190
pF
122
pF
3.6
Ω
18.5
nC
9.6
nC
2.7
nC
Qgd
Gate Drain Charge
4.5
nC
tD(on)
Turn-On DelayTime
7.7
ns
tr
Turn-On Rise Time
5.7
ns
20.2
ns
9.5
ns
ns
nC
VGS=-10V, VDS=-15V, RL=2.7Ω,
RGEN=3Ω
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-6A, dI/dt=100A/µs
20
Qrr
Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs
8.8
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4606
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
25
20
6V
5V
4.5V
VDS=5V
16
4V
15
ID(A)
ID (A)
20
3.5V
12
8
10
VGS=3V
5
125°C
4
25°C
0
0
0
1
2
3
4
0
5
0.5
Normalized On-Resistance
50
RDS(ON) (mΩ)
1.5
2
2.5
3
3.5
4
4.5
1.6
60
VGS=4.5V
40
30
20
VGS=10V
10
0
5
10
15
1.5
VGS=10V
ID=5A
1.4
VGS=4.5V
1.3
1.2
1.1
1
0.9
0.8
20
0
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
100
150
200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction Temperature
70
1.0E+01
60
1.0E+00
ID=5A
50
IS Amps
RDS(ON) (mΩ)
1
VGS (Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
125°C
40
1.0E-01
1.0E-02
125°C
1.0E-03
30
25°C
1.0E-04
25°C
20
1.0E-05
0.0
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body diode characteristics
1.0
AO4606
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
VDS=15V
ID=6.9A
800
Capacitance (pF)
VGS (Volts)
8
f=1MHz
VGS=0V
900
6
4
2
700
Ciss
600
500
400
300
200
Coss
100
0
Crss
0
0
2
4
6
8
10
12
14
0
Qg (nC)
Figure 7: Gate-Charge characteristics
100
25
30
TJ(Max)=150°C
TA=25°C
10µs
Power W
ID (Amps)
20
40
10ms
0.1s
1
15
30
100µs
1ms
10
10
VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
5
1s
20
10
10s
DC
0.1
0.1
1
10
0
0.001
100
VDS (Volts)
Z θJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4606
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
-10V
25
-6V
-5V
VDS=-5V
25
20
20
-4V
-ID(A)
-ID (A)
30
-4.5V
15
-3.5V
10
15
10
5
125°C
5
VGS=-3V
25°C
0
0
0
1
2
3
4
5
0
0.5
60
1.5
2
2.5
3
3.5
4
4.5
5
1.60
Normalized On-Resistance
55
VGS=-4.5V
50
45
RDS(ON) (mΩ)
1
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
40
35
VGS=-10V
30
25
20
ID=-6A
1.40
VGS=-10V
1.20
VGS=-4.5V
1.00
15
0.80
10
0
5
10
15
20
0
25
25
100
125
150
175
1.0E+01
70
ID=-6A
60
1.0E+00
1.0E-01
50
125°C
40
125°C
1.0E-02
-IS (A)
RDS(ON) (mΩ)
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
80
50
1.0E-03
30
25°C
1.0E-04
20
25°C
1.0E-05
10
1.0E-06
0
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4606
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=-15V
ID=-6A
1250
Capacitance (pF)
-VGS (Volts)
8
6
4
2
Ciss
1000
750
500
Coss
0
0
0
4
8
12
16
20
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
10µs
100µs
0.1s
1ms
10ms
1s
20
25
30
TJ(Max)=150°C
TA=25°C
20
10
10s
DC
0.1
0.1
15
30
Power (W)
RDS(ON)
limited
1.0
10
40
TJ(Max)=150°C, TA=25°C
10.0
5
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
-ID (Amps)
Crss
250
1
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
0.01
100
1000
ALPHA & OMEGA
SO-8 Package Data
SEMICONDUCTOR, INC.
DIMENSIONS IN MILLIMETERS
SYMBOLS
A
A1
A2
b
c
D
E1
e
E
h
L
aaa
θ
MIN
1.45
0.00
−−−
0.33
0.19
4.80
3.80
5.80
0.25
0.40
−−−
0°
NOM
1.50
−−−
1.45
−−−
−−−
−−−
−−−
1.27 BSC
−−−
−−−
−−−
−−−
−−−
DIMENSIONS IN INCHES
MAX
1.55
0.10
−−−
0.51
0.25
5.00
4.00
MIN
0.057
0.000
−−−
0.013
0.007
0.189
0.150
6.20
0.50
1.27
0.10
8°
0.228
0.010
0.016
−−−
0°
NOM
0.059
−−−
0.057
−−−
−−−
−−−
−−−
0.050 BSC
−−−
−−−
−−−
−−−
−−−
MAX
0.061
0.004
−−−
0.020
0.010
0.197
0.157
0.244
0.020
0.050
0.004
8°
θ
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.10 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
PACKAGE MARKING DESCRIPTION
LOGO 4 6 0 6
FAYWLC
NOTE:
LOGO
4606
F
A
Y
W
LC
RECOMMENDED LAND PATTERN
- AOS LOGO
- PART NUMBER CODE.
- FAB LOCATION
- ASSEMBLY LOCATION
- YEAR CODE
- WEEK CODE.
- ASSEMBLY LOT CODE
SO-8 PART NO. CODE
PART NO.
CODE
AO4606
4606
UNIT: mm
Rev. A
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Carrier Tape
SO-8 Reel
SO-8 Tape
Leader / Trailer
& Orientation
SO-8 Tape and Reel Data