Feb 2003 AO4606 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel VDS (V) = 30V ID = 6.9A RDS(ON) < 28mΩ (VGS=10V) < 42mΩ (VGS=4.5V) The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. p-channel -30V -6A RDS(ON) < 35mΩ (VGS = 10V) < 58mΩ (VGS = 4.5V) D1 D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 SOIC-8 p-channel n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage Pulsed Drain Current TA=70°C B TA=25°C Power Dissipation ±20 6.9 -6 ID 5.8 -5 IDM 30 -30 2 2 TA=70°C 1.44 1.44 Junction and Storage Temperature Range -55 to 150 -55 to 150 PD TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch Typ 48 74 35 p-ch p-ch p-ch 48 74 35 Units V V ±20 TA=25°C Continuous Drain Current A Max p-channel -30 A W °C Max Units 62.5 °C/W 110 °C/W 60 °C/W 62.5 110 40 °C/W °C/W °C/W AO4606 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 20 TJ=55°C 5 VGS=10V, ID=6.9A TJ=125°C VGS=4.5V, ID=5.0A gFS Forward Transconductance VSD IS=1A Diode Forward Voltage Maximum Body-Diode Continuous Current IS VDS=5V, ID=6.9A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=6.9A 10 Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ µA 100 nA 1.9 3 V 22.5 28 31.3 38 34.5 42 A 15.4 0.76 mΩ mΩ S 1 V 3 A 680 pF 102 pF 77 pF 3 Ω 13.84 nC 6.74 nC Qgs Gate Source Charge 1.82 nC Qgd Gate Drain Charge 3.2 nC tD(on) Turn-On DelayTime 4.6 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω 4.1 ns 20.6 ns 5.2 ns IF=6.9A, dI/dt=100A/µs 16.5 Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs 7.8 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO4606 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1.2 ID(ON) On state drain current VGS=-10V, VDS=-5V 30 RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-6A TJ=125°C VGS=-4.5V, ID=-5A Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-6A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-6A µA -5 IGSS gFS Units -1 TJ=55°C VSD Max V VDS=-24V, VGS=0V VGS(th) IS Typ -2 ±100 nA -2.4 V A 28 35 37 45 44 58 mΩ mΩ 13 -0.76 S -1 V -4.2 A 920 pF 190 pF 122 pF 3.6 Ω 18.5 nC 9.6 nC 2.7 nC Qgd Gate Drain Charge 4.5 nC tD(on) Turn-On DelayTime 7.7 ns tr Turn-On Rise Time 5.7 ns 20.2 ns 9.5 ns ns nC VGS=-10V, VDS=-15V, RL=2.7Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-6A, dI/dt=100A/µs 20 Qrr Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs 8.8 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO4606 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 25 20 6V 5V 4.5V VDS=5V 16 4V 15 ID(A) ID (A) 20 3.5V 12 8 10 VGS=3V 5 125°C 4 25°C 0 0 0 1 2 3 4 0 5 0.5 Normalized On-Resistance 50 RDS(ON) (mΩ) 1.5 2 2.5 3 3.5 4 4.5 1.6 60 VGS=4.5V 40 30 20 VGS=10V 10 0 5 10 15 1.5 VGS=10V ID=5A 1.4 VGS=4.5V 1.3 1.2 1.1 1 0.9 0.8 20 0 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature 70 1.0E+01 60 1.0E+00 ID=5A 50 IS Amps RDS(ON) (mΩ) 1 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 125°C 40 1.0E-01 1.0E-02 125°C 1.0E-03 30 25°C 1.0E-04 25°C 20 1.0E-05 0.0 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body diode characteristics 1.0 AO4606 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=15V ID=6.9A 800 Capacitance (pF) VGS (Volts) 8 f=1MHz VGS=0V 900 6 4 2 700 Ciss 600 500 400 300 200 Coss 100 0 Crss 0 0 2 4 6 8 10 12 14 0 Qg (nC) Figure 7: Gate-Charge characteristics 100 25 30 TJ(Max)=150°C TA=25°C 10µs Power W ID (Amps) 20 40 10ms 0.1s 1 15 30 100µs 1ms 10 10 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C RDS(ON) limited 5 1s 20 10 10s DC 0.1 0.1 1 10 0 0.001 100 VDS (Volts) Z θJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4606 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V 25 -6V -5V VDS=-5V 25 20 20 -4V -ID(A) -ID (A) 30 -4.5V 15 -3.5V 10 15 10 5 125°C 5 VGS=-3V 25°C 0 0 0 1 2 3 4 5 0 0.5 60 1.5 2 2.5 3 3.5 4 4.5 5 1.60 Normalized On-Resistance 55 VGS=-4.5V 50 45 RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 40 35 VGS=-10V 30 25 20 ID=-6A 1.40 VGS=-10V 1.20 VGS=-4.5V 1.00 15 0.80 10 0 5 10 15 20 0 25 25 100 125 150 175 1.0E+01 70 ID=-6A 60 1.0E+00 1.0E-01 50 125°C 40 125°C 1.0E-02 -IS (A) RDS(ON) (mΩ) 75 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 80 50 1.0E-03 30 25°C 1.0E-04 20 25°C 1.0E-05 10 1.0E-06 0 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4606 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=-15V ID=-6A 1250 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 0 0 0 4 8 12 16 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 100µs 0.1s 1ms 10ms 1s 20 25 30 TJ(Max)=150°C TA=25°C 20 10 10s DC 0.1 0.1 15 30 Power (W) RDS(ON) limited 1.0 10 40 TJ(Max)=150°C, TA=25°C 10.0 5 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 -ID (Amps) Crss 250 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000 ALPHA & OMEGA SO-8 Package Data SEMICONDUCTOR, INC. DIMENSIONS IN MILLIMETERS SYMBOLS A A1 A2 b c D E1 e E h L aaa θ MIN 1.45 0.00 −−− 0.33 0.19 4.80 3.80 5.80 0.25 0.40 −−− 0° NOM 1.50 −−− 1.45 −−− −−− −−− −−− 1.27 BSC −−− −−− −−− −−− −−− DIMENSIONS IN INCHES MAX 1.55 0.10 −−− 0.51 0.25 5.00 4.00 MIN 0.057 0.000 −−− 0.013 0.007 0.189 0.150 6.20 0.50 1.27 0.10 8° 0.228 0.010 0.016 −−− 0° NOM 0.059 −−− 0.057 −−− −−− −−− −−− 0.050 BSC −−− −−− −−− −−− −−− MAX 0.061 0.004 −−− 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8° θ NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION LOGO 4 6 0 6 FAYWLC NOTE: LOGO 4606 F A Y W LC RECOMMENDED LAND PATTERN - AOS LOGO - PART NUMBER CODE. - FAB LOCATION - ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE SO-8 PART NO. CODE PART NO. CODE AO4606 4606 UNIT: mm Rev. A ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Carrier Tape SO-8 Reel SO-8 Tape Leader / Trailer & Orientation SO-8 Tape and Reel Data