AO4606 30V Complementary MOSFET General Description Product Summary The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-Channel VDS= 30V P-Channel -30V ID= 6A (VGS=10V) -6.5A (VGS=-10V) RDS(ON) RDS(ON) < 30mΩ (VGS=10V) < 28mΩ (VGS=-10V) < 42mΩ (VGS=4.5V) < 44mΩ (VGS=-4.5V) 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested SOIC-8 D2 Top View D1 Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 n-channel Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel VDS Drain-Source Voltage 30 Gate-Source Voltage VGS TA=25°C Continuous Drain Current ID TA=70°C S1 p-channel Max p-channel -30 Units V ±20 ±20 V 6 -6.5 A 5 -5.3 IDM 30 -30 Avalanche Current C IAS, IAR 10 23 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 5 26 mJ Pulsed Drain Current Power Dissipation B C PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 10: April 2012 Steady-State Steady-State 2 1.3 TJ, TSTG Symbol t ≤ 10s 2 1.3 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 W °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 9 AO4606 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 30 VGS=10V, ID=6A TJ=125°C VGS=4.5V, ID=5A ±100 nA 1.8 2.4 V 25 30 40 48 33.5 42 mΩ 1 V 2.5 A A gFS Forward Transconductance VDS=5V, ID=6A 15 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 IGSS Coss Units 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ mΩ S 200 255 310 pF VGS=0V, VDS=15V, f=1MHz 30 45 60 pF 20 35 50 pF VGS=0V, VDS=0V, f=1MHz 1.6 3.25 4.9 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4 5.2 6 nC Qg(4.5V) Total Gate Charge 2 2.55 3 nC VGS=10V, VDS=15V, ID=6A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=6A, dI/dt=100A/µs 8.5 12 Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs 2.2 3 Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω 0.85 nC 1.3 nC 4.5 ns 2.5 ns 14.5 ns 3.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 10: April 2012 www.aosmd.com Page 2 of 9 AO4606 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 30 10V VDS=5V 25 4.5V 7V 12 20 9 ID(A) ID (A) 4V 15 3.5V 6 10 125°C 3 VGS=3V 5 0 0 0 1 2 3 4 1 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 2 Normalized On-Resistance 45 40 VGS=4.5V RDS(ON) (mΩ Ω) 25°C 35 30 25 VGS=4.5V ID=6A 1.8 1.6 1.4 1.2 VGS=10V ID=8A 1 17 5 2 10 VGS=10V 20 0.8 0 3 6 9 12 15 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 100 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=6A 1.0E+01 40 1.0E+00 60 IS (A) RDS(ON) (mΩ Ω) 80 125°C 125°C 1.0E-01 1.0E-02 25°C 25°C 1.0E-03 40 1.0E-04 20 1.0E-05 0 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 10: April 2012 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 9 AO4606 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 500 VDS=15V ID=6A 400 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 300 200 Coss 2 100 0 0 Crss 0 2 4 Qg (nC) Figure 7: Gate-Charge Characteristics 0 6 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 TA=25°C 10µs RDS(ON) limited 100 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 Power (W) ID (Amps) 10.0 10 10s DC 1 0.0 0.01 0.1 1 VDS (Volts) 10 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=90°C/W 0.1 PD 0.01 Ton T 0.001 0.00001 Rev 10: April 2012 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 100 1000 Page 4 of 9 AO4606 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 10: April 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 9 AO4606 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V VDS=-30V, VGS=0V -30 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage ID(ON) On state drain current VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-6.5A RDS(ON) -1.3 Forward Transconductance Diode Forward Voltage IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance µA ±100 nA -1.85 -2.4 V 22 28 32 40 34 44 A mΩ mΩ 18 -0.8 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance V -30 VGS=-4.5V, ID=-5A VDS=-5V, ID=-6.5A IS=-1A,VGS=0V gFS Units -5 TJ=125°C VSD Max -1 TJ=55°C Static Drain-Source On-Resistance Coss Typ VGS=0V, VDS=-15V, f=1MHz S -1 V -2.5 A 760 pF 140 pF 95 pF 3.2 5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 13.6 16 nC Qg(4.5V) Total Gate Charge 6.7 8 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=-15V, ID=-6.5A 1.5 2.5 nC 3.2 nC 8 ns VGS=10V, VDS=-15V, RL=2.3Ω, RGEN=3Ω 6 ns 17 ns 5 ns IF=-6.5A, dI/dt=100A/µs 15 Body Diode Reverse Recovery Charge IF=-6.5A, dI/dt=100A/µs 9.7 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 10: April 2012 www.aosmd.com Page 6 of 9 AO4606 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 40 -10V VDS=-5V -4.5V -5V 30 30 -ID(A) -ID (A) -4V 20 20 125°C -3.5V 10 10 25°C VGS=-3V 0 0 0 1 2 3 4 0 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 45 1.8 Normalized On-Resistance VGS=-4.5V 40 35 RDS(ON) (mΩ Ω) 1 30 25 20 VGS=-10V 15 10 VGS=-10V ID=-6.5A 1.6 1.4 17 5 2 VGS=-4.5V 10 ID=-5A 1.2 1 0.8 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 90 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=-6.5A 1.0E+01 40 1.0E+00 125°C -IS (A) RDS(ON) (mΩ Ω) 70 125°C 50 30 1.0E-01 25°C 1.0E-02 1.0E-03 25°C 1.0E-04 10 1.0E-05 2 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 10: April 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 9 AO4606 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=-15V ID=-6.5A 1000 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 800 600 400 Coss 2 200 0 0 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics Crss 0 15 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 100.0 TA=25°C 10µs RDS(ON) limited 100µs 1ms 1.0 10ms 0.1 DC TJ(Max)=150°C TA=25°C 100 Power (W) -ID (Amps) 10.0 10 10s 0.0 1 0.01 0.1 1 -VDS (Volts) 10 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 10: April 2012 www.aosmd.com Page 8 of 9 AO4606 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 10: April 2012 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 9 of 9