elm14812aa

Dual N-channel MOSFET
ELM14812AA-N
■General description
■Features
ELM14812AA-N uses advanced trench technology to
provide excellent Rds(on) and low gate charge.
•
•
•
•
Vds=30V
Id=6.9A (Vgs=10V)
Rds(on) < 28mΩ (Vgs=10V)
Rds(on) < 42mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
30
V
Gate-source voltage
Vgs
±20
6.9
5.8
V
A
1
30
2.00
1.44
A
2
Ta=25°C
Ta=70°C
Continuous drain current
Id
Pulsed drain current
Idm
Tc=25°C
Tc=70°C
Power dissipation
Pd
Junction and storage temperature range
Tj, Tstg
W
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Symbol
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
Max.
Unit
48.0
74.0
35.0
62.5
110.0
40.0
°C/W
°C/W
°C/W
Note
1
3
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
Pin name
1
2
3
SOURCE2
GATE2
SOURCE1
4
5
6
GATE1
DRAIN1
DRAIN1
7
8
DRAIN2
DRAIN2
4-1
D2
D1
G2
G1
S1
S2
Dual N-channel MOSFET
ELM14812AA-N
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
BVdss Id=250μA, Vgs=0V
Idss
30
0.004
Vds=24V, Vgs=0V
Ta=55°C
Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA
1.0
On state drain current
Id(on) Vgs=4.5V, Vds=5V
20
Static drain-source on-resistance
Rds(on)
Forward transconductance
Gfs
Vgs=4.5V, Id=5A
Vds=5V, Id=6.9A
Diode forward voltage
Vsd
Is=1A
Max. body-diode continuous current
DYNAMIC PARAMETERS
Ciss
Coss
Reverse transfer capacitance
Crss
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Total gate charge (4.5V)
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
Ta=125°C
10.0
1.9
Rg
Vgs=0V, Vds=15V, f=1MHz
100
3.0
nA
V
22.5
31.3
28.0
38.0
34.5
15.4
42.0
0.76
1.00
V
3
A
820
pF
pF
680
102
mΩ
S
77
Vgs=0V, Vds=0V, f=1MHz
μA
A
Is
Input capacitance
Output capacitance
1.000
5.000
Gate-body leakage current
Gate threshold voltage
Vgs=10V, Id=6.9A
V
pF
3.0
3.6
Ω
13.84
17.00
nC
6.74
1.82
3.20
8.10
nC
nC
nC
td(on)
tr
Vgs=10V, Vds=15V
4.6
4.1
7.0
6.2
ns
ns
td(off) RL=2.2Ω, Rgen=3Ω
tf
trr
If=6.9A, dIf/dt=100A/μs
20.6
5.2
16.5
30.0
7.5
20.0
ns
ns
ns
7.8
10.0
nC
Qg
Qg
Qgs
Qgd
Qrr
Vgs=10V, Vds=15V, Id=6.9A
If=6.9A, dIf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Dual N-channel MOSFET
ELM14812AA-N
■Typical electrical and thermal characteristics
10V
25
20
6V
5V
4.5V
Id (A)
20
15
3.5V
10
12
8
125°C
4
Vgs=3V
5
Vds=5V
16
4V
Id (A)
30
25°C
0
0
0
1
2
3
4
0
5
0.5
2
2.5
3
3.5
4
4.5
1.6
Normalized On-Resistance
60
50
Rds(on) (m� )
1.5
Vgs (Volts)
Figure 2: Transfer Characteristics
Vds (Volts)
Fig 1: On-Region Characteristics
Vgs=4.5V
40
30
20
Vgs=10V
1.5
Vgs=10V
Id=5A
1.4
Vgs=4.5V
1.3
1.2
1.1
1
0.9
0.8
10
0
5
10
15
0
20
50
100
150
200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction
Temperature
Id (Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01
70
60
1.0E+00
Id=5A
50
Is Amps
Rds(on) (m� )
1
125°C
40
1.0E-01
1.0E-02
125°C
1.0E-03
30
25°C
20
25°C
1.0E-04
1.0E-05
0.0
10
2
4
6
8
10
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
0.2
0.4
0.6
0.8
Vsd (Volts)
Figure 6: Body diode characteristics
1.0
Dual N-channel MOSFET
ELM14812AA-N
10
f=1MHz
Vgs=0V
900
800
Capacitance (pF)
8
Vgs (Volts)
1000
Vds=15V
Id=6.9A
6
4
2
700
Ciss
600
500
400
300
200
Coss
100
0
0
2
4
6
8
10
12
Crss
0
14
0
Qg (nC)
Figure 7: Gate-Charge characteristics
100
10ms
1s
DC
0.1
1
10
Z� ja Normalized Transient
Thermal Resistance
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=62.5°C/W
30
20
0
0.001
100
Vds (Volts)
10
25
10
10s
0.1
20
Tj(max)=150°C
Ta=25°C
30
10�s
0.1s
1
15
40
Power W
Id (Amps)
100�s
1ms
10
10
Vds (Volts)
Figure 8: Capacitance Characteristics
Tj(max)=150°C
Ta=25°C
Rds(on)
limited
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000