Complementary MOSFET ELM35603KA-S ■General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. N-channel • • • • Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V) Rds(on) < 33mΩ(Vgs=7V) Rds(on) < 40mΩ(Vgs=-7V) ■Maximum Absolute Ratings Parameter Symbol Drain-source voltage Gate-source voltage Vds Vgs Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Id Idm Tc=25°C Tc=70°C Power dissipation P-channel Junction and storage temperature range Pd Tj,Tstg Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit Note 40 ±20 10.0 -40 ±20 -7.0 V V 8.5 50 -6.0 -50 3.0 2.1 -55 to 150 3.0 2.1 -55 to 150 A A 3 W °C ■Thermal Characteristics Parameter Symbol Device Maximum junction-to-ambient Rθja Maximum junction-to-case Maximum junction-to-ambient Maximum junction-to-case Max. Unit N-ch 42 °C/W Rθjc Rθja N-ch P-ch 6 42 °C/W °C/W Rθjc P-ch 6 °C/W ■Pin configuration 1 2 3 4 Note ■Circuit TO-252-4(TOP VIEW) TAB Typ. • N-ch Pin No. Pin name 1 2 SOURCE1 GATE1 3 4 TAB SOURCE2 GATE2 DRAIN1/DRAIN2 7-1 • P-ch D1 G1 D2 G2 S1 S2 Complementary MOSFET ELM35603KA-S ■Electrical Characteristics (N-ch) Parameter Symbol Conditions Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=32V, Vgs=0V Vds=30V, Vgs=0V, Ta=55°C Gate-body leakage current Gate threshold voltage On state drain current Igss Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance Rds(on) 40 1.2 50 V 1 10 μA ±100 nA 3.0 V A 1 mΩ 1 1.2 S V 1 1 1145 253 1450 355 pF pF 142 pF 2.0 Vgs=10V, Id=10A 19 22 Vgs=7V, Id=7A Vds=10V, Id=10A If=10A, Vgs=0V 25 25 33 Forward transconductance Diode forward voltage DYNAMIC PARAMETERS Gfs Vsd Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Crss 94 Qg Qgs Qgd 23.0 3.6 3.0 Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Vgs=0V, Vds=10V, f=1MHz Vgs=10V, Vds=20V, Id=10A td(on) tr Vgs=10V, Vds=20V, Id=1A td(off) Rgen=6Ω Body diode reverse recovery time tf trr Body diode reverse recovery charge Qrr If=10A, dIf/dt=100A/μs 1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 7-2 2 2 2 3.2 10.8 17.1 6.4 21.7 30.8 ns ns ns 2 2 2 5.3 60 10.7 ns ns 2 43 NOTE : nC nC nC nC NIKO-SEM P2204ND5G N- & P-Channel Enhancement Mode Complementary MOSFET Field Effect Transistor ELM35603KA-S TO-252-5 Lead-Free ■Typical Electrical and Thermal Characteristics (N-ch) Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS= 0V T A = 125°C Is - Reverse Drain Current(A) 10 25°C 1 -55°C 0.1 0.01 0.001 4 7-3 0 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 May-03-2006 NIKO-SEM Complementary MOSFET N- & P-Channel Enhancement Mode ELM35603KA-S Field Effect Transistor 7-4 5 P2204ND5G TO-252-5 Lead-Free May-03-2006 Complementary MOSFET ELM35603KA-S ■Electrical Characteristics (P-ch) Parameter Symbol Conditions Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Vds=-32V, Vgs=0V Vds=-30V, Vgs=0V, Ta=55°C Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Static drain-source on-resistance Rds(on) Forward transconductance Diode forward voltage DYNAMIC PARAMETERS Gfs Vsd Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Crss Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Qg Qgs Qgd Body diode reverse recovery time Body diode reverse recovery charge Qrr V -1 -10 -1.2 -50 -2.0 ±100 -3.0 mΩ 1 -1.2 S V 1 1 1000 450 1260 625 pF pF 108 163 pF 33 Vgs=-7V, Id=-5A Vds=-10V, Id=-7A If=-7A, Vgs=0V 32 18 40 Vgs=-10V, Vds=-20V Id=-7A If=-7A, dIf/dt=100A/μs 20.0 3.2 2.7 1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 7-5 nC nC nC 2 2 2 9.7 14.0 28.7 19.4 28.1 51.6 ns ns ns 2 2 2 17.8 80 32.2 ns ns 2 75 NOTE : nA 1 28 Vgs=0V, Vds=-10V, f=1MHz μA V A Vgs=-10V, Id=-7A td(on) tr Vgs=-10V, Vds=-20V td(off) Id=-1A, Rgen=6Ω tf trr -40 nC NIKO-SEM P2204ND5G N- Complementary & P-Channel Enhancement Mode MOSFET Field Effect Transistor ELM35603KA-S TO-252-5 Lead-Free ■Typical Electrical and Thermal Characteristics (P-ch) -Is - Reverse Drain Current(A) Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS= 0V 10 1 0.1 7-6 25°C -55°C 0.01 0.001 0 6 TA = 125°C 0.8 1.0 1.2 0.2 0.4 0.6 -VSD- Body Diode Forward Voltage(V) 1.4 May-03-2006 NIKO-SEM Complementary MOSFET N- & P-Channel Enhancement Mode ELM35603KA-S Field Effect Transistor 7 7-7 P2204ND5G TO-252-5 Lead-Free May-03-2006