Complementary MOSFET ELM36601EA-S ■General Description ■Features ELM36601EA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • N-channel P-channel Vds=30V Id=3.5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 88mΩ(Vgs=4.5V) Vds=-30V Id=-2A Rds(on) < 115mΩ(Vgs=-10V) Rds(on) < 185mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Symbol Vds N-ch (Max.) 30 P-ch (Max.) -30 Vgs ±20 3.5 2.8 ±20 -2.3 -1.8 V 10 1.15 0.73 -10 1.15 0.73 A -55 to 150 -55 to 150 Ta=25°C Ta=70°C Continuous drain current Id Pulsed drain current Idm Ta=25°C Ta=70°C Power dissipation Junction and storage temperature range Pd Tj,Tstg Unit Note V A 3 W °C ■Thermal Characteristics Parameter Symbol Maximum junction-to-ambient t≤5s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Maximum junction-to-ambient t≤5s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja 6 1 5 2 4 3 Typ. Rθja Max. Unit Note 110 N-ch 150 80 Rθjl °C/W 110 P-ch 150 80 Rθjl ■Pin Configuration SOT-26(TOP VIEW) Device °C/W ■Circuit Pin No. 1 Pin name GATE1 2 3 SOURCE2 GATE2 4 5 DRAIN2 SOURCE1 6 DRAIN1 7- 1 • N-ch • P-ch D1 G1 D2 G2 S1 S2 Complementary MOSFET ELM36601EA-S ■Electrical Characteristics (N-ch) Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Gate threshold voltage Igss On state drain current Static drain-source on-resistance Forward transconductance Diode forward voltage Conditions Min. Typ. 30 V Vds=24V, Vgs=0V 1 Vds=20V, Vgs=0V, Tj=55°C Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Vgs=10V, Id=3.5A Rds(on) Vgs=4.5V, Id=2A Gfs Vds=5V, Id=2.5A Vsd If=0.8A, Vgs=0V Ta=25°C Max. Unit Note 10 ±100 1.0 1.5 2.5 8 50 58 69 4.5 88 1.2 μA nA V A 1 mΩ 1 S V 1 1 DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=15V, f=1MHz 202 40 pF pF Reverse transfer capacitance Crss 20 pF SWITCHING PARAMETERS Total gate charge Qg 2.6 3.9 nC 2 2 2 2 Gate-source charge Gate-drain charge Turn-on delay time Qgs Vgs=10V, Vds=15V, Id=3.5A Qgd td(on) 0.9 0.6 7 11 nC nC ns Turn-on rise time Turn-off delay time tr Vgs=10V, Vds=15V, Id≈1A td(off) RL=15Ω, Rgen=6Ω 12 12 18 18 ns ns 2 2 7 11 ns 2 40 80 ns Turn-off fall time Body-diode reverse recovery time tf trr If=0.8A, dl/dt=100A/μs NOTE : 1. Pulse test : Pulse width ≤ 300μsec, duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulse width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 7- 2 Complementary MOSFET NIKO-SEM P5803NAG N- & P-Channel Enhancement Mode ELM36601EA-S Field Effect Transistor TSOP-6 Lead-Free ■Typical Electrical and Thermal Characteristics N-CHANNEL On-Region Characteristics. 6.0V 4.5V 8 4.0V 6 4 2 1.8 3.5V 2 0 1 4.5V 1.4 5.0V 1.2 6.0V 7.0V 1 3.0V 0 VGS= 4.0V 1.6 DS(ON) ID, Drain-source current(A) VGS= 10V R , Noemalized Drain-source on-resistance 10 On-Resistance Variation with Drain Current and Gate Voltage. 10V 0.8 2 3 0 4 2 VDS, Drain-Source Voltage(V) 4 6 8 10 ID, Drain Current(A) 1.6 ID= 3.5A VGS= 10V 1.4 1.2 1 0.8 0.6 -50 -25 0.275 RDS(ON), On-resistance(OHM) DS(ON) R , Normalized Drain-source on-resistance On-Resistance Variation with Gate-to-Source Voltage. On-Resistance Variation with Temperature. 0 25 75 50 100 125 ID=2A 0.225 0.175 0.125 TA= 125°C TA= 25°C 0.075 0.025 150 4 2 TJ, Junction Temperature(°C) Is, Reverse Drain Current (A) 10 ID, Drain Current(A) 125°C TA= -55°C 8 25°C 6 4 2 0 1 2 3 4 8 10 Body Diode Forword Voltage Variation with Source Current and Temperature. Transfer Characteristics. VDS= 5V 6 VGS, Gate to Source Voltage(V) 5 VGS, Gate to Source Voltage(V) 10 VGS= 0V 1 TA= 125°C 7- 3 4 -55°C 0.01 0.001 0.0001 0 6 25°C 0.1 0.2 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forword Voltage(V) APR-03-2006 1.4 Complementary MOSFET ELM36601EA-S N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM ID = 3.5A VDS= 5V 15V 8 Capacitance(pF) VGS, Gate-Source Voltage(V) 400 10 10V 6 4 2 300 Ciss 200 Coss 100 Crss 0 0 1 0 2 0 4 3 5 10 15 20 25 30 VDS,Drain to Source Voltage(V) Qg, Gate Charge(nC) Single Pulse Maximum Power Dissipation. Maximum Safe Operating Area. 5 30 100 us 10 S (O RD 3 T IMI N)L 4 1m s 10m s 1 Power(W) ID, Drain Current(A) TSOP-6 Lead-Free Capacitance Characteristics Gate-Charge Characteristics 100 ms 0.3 1s DC VGS= 10V SINGLE PULSE R ﾀJA=150°C/W TA=25°C 0.1 0.03 0.01 P5803NAG 0.1 0.3 1 3 2 VGS= 10V SINGLE PULSE R JﾀA=150°C/W TA=25°C 1 3 10 30 50 VDS, Drain-Source Voltage(V) 0 0.01 0.1 1 10 100 300 Single pulse time(SEC) 7- 4 5 APR-03-2006 Complementary MOSFET ELM36601EA-S ■Electrical Characteristics (P-ch) Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Conditions BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Min. -30 -1 Vds=-20V, Vgs=0V, Tj=55°C Vds=0V, Vgs=±20V -10 ±100 Vgs(th) Vds=Vgs, Id=-250μA -1.0 On state drain current Id(on) Vgs=-10V, Vds=-5V Vgs=-10V, Id=-2.3A Rds(on) Vgs=-4.5V, Id=-1.5A Gfs Vds=-5V, Id=-2A Vsd If=-0.8A, Vgs=0V -8 Forward transconductance Diode forward voltage V Vds=-24V, Vgs=0V Gate threshold voltage Static drain-source on-resistance Typ. Ta=25°C Max. Unit Note -1.5 -2.5 95 115 145 3 185 -1.2 μA nA V A 1 mΩ 1 S V 1 1 DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=-15V, f=1MHz 225 60 pF pF Reverse transfer capacitance Crss 30 pF SWITCHING PARAMETERS Total gate charge Qg Vgs=-10V, Vds=-15V Id=-2A Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd td(on) Turn-on rise time Turn-off delay time tr Vgs=-10V, Vds=-15V, Id≈-1A td(off) RL=15Ω, Rgen=6Ω Turn-off fall time tf Body-diode reverse recovery time trr If=-0.8A, dl/dt=100A/μs NOTE : 1. Pulse test : Pulse width ≤ 300μsec, duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulse width limited by maximum junction temperature. 7- 5 2.8 4.2 nC 2 1.0 0.7 8 12 nC nC ns 2 2 2 11 14 18 21 ns ns 2 2 8 12 ns 2 40 80 ns Complementary MOSFET NIKO-SEM P5803NAG N- & P-Channel Enhancement Mode ELM36601EA-S Field Effect Transistor ■Typical Electrical and Thermal Characteristics P-CHANNEL On-Resistance Variation with Drain Current and Gate Voltage. ID,Drain Current(A) VGS= -10V - 6.0V 8 RDS(ON),Normalized Drain-Source On-Resistance On-Region Characteristics 10 - 4.5V - 3.5V 4 0 1 2 VGS=-3.5V 3 - 4.0V 2 4 -10.0V 1 0.5 5 0 2 4 RDS(ON),On-Resistance(OHM) RDS(ON),Normalized Drain-Source On-Resistance 1 0.8 ID = -1.5A 0.3 TA=125°C 0.2 25 50 75 100 125 TA=25°C 0.1 0.6 0 0 150 4 2 TJ,Junction Temperature(°C) 10 6 Body Diode Forward Voltage Variation With Source Current and Temperature. 10 5 25°C TA= - 55°C 4 -IS,Reverse Drain Current(A) VDS= - 5V -ID,Drain Current(A) 5 - VGS,Gate To Source Voltage(V) Transfer Characteristics 125°C 3 2 1 0 1.5 10 0.4 1.2 -25 8 On-Resistance Variation with Gate-to-Source Voltage. ID= -2.3A VGS= -10V -50 6 - ID,Drain Current(A) On-Resistance Variation with Temperature 1.4 - 5.0V - 6.0V - VDS,Drain-Source Voltage(V) 1.6 - 4.5V 1.5 2 0 3 2.5 - 4.0V 6 TSOP-6 Lead-Free 2.5 3.5 4.5 VGS=0V 1 TA=125°C 0.1 25°C 0.01 - 55°C 0.001 0.0001 0 -VGS,Gate To Source Voltage(V) 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD,Body Diode Forward Voltage(V) 7- 6 6 APR-03-2006 NIKO-SEM TSOP-6 Lead-Free Capacitance Characteristics 400 10 ID = -2A VDS= -5V -10V 8 300 Capacitance(pF) VGS, Gate-Source Voltage(V) Gate-Charge Characteristics -15V 6 4 Ciss 200 100 2 Coss 0 Crss 0 0 1 2 3 4 0 5 10 Qg, Gate Charge(nC) 20 25 30 Single Pulse Maximum Power Dissipation. 5 30 100 us 10 S (O RD 3 T IMI N)L 4 1m s 100 ms 1s DC 0.3 VGS= 10V SINGLE PULSE R ﾀJA=150°C/W TA=25°C 0.1 0.03 0.1 0.3 1 Power(W) 10m s 1 0.01 15 VDS,Drain to Source Voltage(V) Maximum Safe Operating Area. ID, Drain Current(A) P5803NAG MOSFET N- Complementary & P-Channel Enhancement Mode FieldELM36601EA-S Effect Transistor 3 2 1 3 10 30 VGS= 10V SINGLE PULSE R JﾀA=150°C/W TA=25°C 0 0.01 50 VDS, Drain-Source Voltage(V) 0.1 1 10 100 300 Single pulse time(SEC) D=0.5 0.5 P(pk) r(t), Normalized Effective Transient Thermal Resistance Transient Thermal Response Curve. 1 0.2 0.2 0.1 0.05 0.05 0.02 R JﾀA(t) = r(t) * R ﾀ +" R JﾀA=150°C/W TJ-TA=P*R JﾀA(t) Duty Cycle, D= t1/ t2 0.02 0.01 Single Pulse 0.01 0.0001 t1 t2 0.1 0.001 0.01 0.1 1 10 100 t1 Time(Sec) 7 7- 7 APR-03-2006 300